JPS5225576A - Exposure method of photo-resist - Google Patents

Exposure method of photo-resist

Info

Publication number
JPS5225576A
JPS5225576A JP50101212A JP10121275A JPS5225576A JP S5225576 A JPS5225576 A JP S5225576A JP 50101212 A JP50101212 A JP 50101212A JP 10121275 A JP10121275 A JP 10121275A JP S5225576 A JPS5225576 A JP S5225576A
Authority
JP
Japan
Prior art keywords
photo
resist
exposure method
sensitivity
realizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50101212A
Other languages
Japanese (ja)
Inventor
Toshihiko Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50101212A priority Critical patent/JPS5225576A/en
Publication of JPS5225576A publication Critical patent/JPS5225576A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To prevent the generation of halation due to the reflected light, by means of realizing the improved state of the sensitivity by heating the photo-resist layer.
COPYRIGHT: (C)1977,JPO&Japio
JP50101212A 1975-08-22 1975-08-22 Exposure method of photo-resist Pending JPS5225576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50101212A JPS5225576A (en) 1975-08-22 1975-08-22 Exposure method of photo-resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50101212A JPS5225576A (en) 1975-08-22 1975-08-22 Exposure method of photo-resist

Publications (1)

Publication Number Publication Date
JPS5225576A true JPS5225576A (en) 1977-02-25

Family

ID=14294595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50101212A Pending JPS5225576A (en) 1975-08-22 1975-08-22 Exposure method of photo-resist

Country Status (1)

Country Link
JP (1) JPS5225576A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543865A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mask aligner
JPS5543844A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Method and apparatus for photoresist sensitizing process
JPS55103736A (en) * 1979-02-01 1980-08-08 Toshiba Corp Hardening method of proving ink for semiconductor wafer
JPS57112022A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Mask positioning unit
JPS58112329A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Process of exposing resist film to x-rays
JPS5999722A (en) * 1982-11-29 1984-06-08 Canon Inc Control method of printing and exposure of semiconductor
JPH0383322A (en) * 1989-08-28 1991-04-09 Tokyo Electron Ltd Exposure method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543865A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Mask aligner
JPS5543844A (en) * 1978-09-25 1980-03-27 Hitachi Ltd Method and apparatus for photoresist sensitizing process
JPS55103736A (en) * 1979-02-01 1980-08-08 Toshiba Corp Hardening method of proving ink for semiconductor wafer
JPS628937B2 (en) * 1979-02-01 1987-02-25 Tokyo Shibaura Electric Co
JPS57112022A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Mask positioning unit
JPS58112329A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Process of exposing resist film to x-rays
JPS5999722A (en) * 1982-11-29 1984-06-08 Canon Inc Control method of printing and exposure of semiconductor
JPH0141013B2 (en) * 1982-11-29 1989-09-01 Canon Kk
JPH0383322A (en) * 1989-08-28 1991-04-09 Tokyo Electron Ltd Exposure method

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