JPH0383322A - Exposure method - Google Patents
Exposure methodInfo
- Publication number
- JPH0383322A JPH0383322A JP1221135A JP22113589A JPH0383322A JP H0383322 A JPH0383322 A JP H0383322A JP 1221135 A JP1221135 A JP 1221135A JP 22113589 A JP22113589 A JP 22113589A JP H0383322 A JPH0383322 A JP H0383322A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- exposure
- temperature
- processed
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 61
- 230000007246 mechanism Effects 0.000 abstract description 21
- 239000000428 dust Substances 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 abstract description 5
- 239000012809 cooling fluid Substances 0.000 description 9
- 230000001276 controlling effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、露光方法に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to an exposure method.
（従来の技術）
一般に、半導体製造工程において、半導体ウェハの表面
にフォトレジスト膜を形成して配線等のパターンニング
が行われてる。ここで、上記フォトレジスト膜は一般に
半導体ウェハを回転させながらレジスト液を滴下して塗
布するスピンナー法にて、塗布形成される。(Prior Art) Generally, in a semiconductor manufacturing process, a photoresist film is formed on the surface of a semiconductor wafer to pattern wiring and the like. Here, the photoresist film is generally formed by coating by a spinner method in which a resist solution is applied dropwise while rotating a semiconductor wafer.
ところで、上記半導体ウェハの外周部分に存在するレジ
スト膜は、例えば半導体ウェハの搬送中に機械的に破壊
され、ゴミとして飛散することがある。このため、半導
体チップの収率に影響を与えない部分をレジストの塗布
現像工程で予め除去しておくのが望ましい。By the way, the resist film existing on the outer periphery of the semiconductor wafer may be mechanically destroyed, for example, during transportation of the semiconductor wafer, and may be scattered as dust. For this reason, it is desirable to remove portions that do not affect the yield of semiconductor chips in advance in the resist coating and development process.
この問題の解決策として、例えば、特開昭５８−１５９
５３５ 、特開昭５９−１３８３３、特開昭６１−７３
３３０号公報に開示されているように、半導体ウェハの
周縁のみを露光する光学的露光手段を設け、上記半導体
ウェハを回転して露光している。As a solution to this problem, for example,
535, JP-A-59-13833, JP-A-61-73
As disclosed in Japanese Patent No. 330, an optical exposure means for exposing only the peripheral edge of a semiconductor wafer is provided, and the semiconductor wafer is rotated and exposed.
（発明が解決しようとする課題） しかし、上記従来例には、次のような問題がある。(Problem to be solved by the invention) However, the above conventional example has the following problems.
上記の場合、半導体ウェハ等の被処理体を、前の工程の
状態、即ち加熱状態で温度コントロールをせずに、露光
処理を行うので、レジストが正確に露光されず、即ちレ
ジストが所望どうりに感光せず、現像しても取り残しが
あった。また、レジスト中のガスが発砲してレジストが
周囲に飛び散り、半導体ウェハに付着して悪影響を与え
ていた。In the above case, the object to be processed, such as a semiconductor wafer, is exposed to light in the state of the previous process, that is, in the heated state, without temperature control, so the resist is not exposed accurately, that is, the resist is not as desired. It was not exposed to light, and even after development, there was some residue left behind. Further, the gas in the resist explodes, causing the resist to scatter around the resist, adhering to the semiconductor wafer and having an adverse effect.
さらに、半導体ウェハ等の被処理体の温度調節を行う場
合、周縁露光装置の前工程に温度調節装置例えばクーリ
ングプレートをわざわざ設ける必要があり、装置の大型
化やスループットの低下を招いていた。Furthermore, when controlling the temperature of an object to be processed such as a semiconductor wafer, it is necessary to take the trouble to provide a temperature control device, such as a cooling plate, in a pre-process of the edge exposure device, leading to an increase in the size of the device and a decrease in throughput.
この発明は、上記問題点に対処してなされたもので、温
度コントロールを正確に行うことで、レジストの取り残
し等を無くし、ゴミ等の発生を最小限に押さえられる露
光方法を提供するものである。This invention was made in response to the above-mentioned problems, and provides an exposure method that eliminates resist residue and minimizes the generation of dust by accurately controlling temperature. .
（１題を解決するための手段）
この発明は、被処理体の周縁に光を照射し、上記被処理
体を露光する露光方法において、少なくとも上記被処理
体の光照射部の温度を調節した状態で露光することを特
徴とする。(Means for Solving Problem 1) The present invention provides an exposure method for exposing the object to light by irradiating the periphery of the object to light, in which the temperature of at least the light irradiated part of the object to be processed is adjusted. It is characterized by being exposed to light.
（作用効果）
即ちこの発明は、被処理体の周縁に光を照射し、上記被
処理体を露光する露光方法において、少なくとも上記被
処理体の光照射部の温度を調節した状態で露光すること
により、温度コントロールを正確に行うことで、レジス
トの取り残し等を無くし、ゴミ等の発生を最小限に押さ
えられる。(Operation and Effect) That is, in the exposure method of exposing the object to light by irradiating the periphery of the object to light, the present invention is characterized in that the temperature of at least the light irradiated part of the object to be processed is adjusted. By accurately controlling the temperature, no resist is left behind, and the generation of dust can be minimized.
（実施例）
以下、本発明方法を、半導体製造工程における半導体ウ
ェハの周縁露光に適用した一実施例を図面を参照して説
明する。(Example) Hereinafter, an example in which the method of the present invention is applied to edge exposure of a semiconductor wafer in a semiconductor manufacturing process will be described with reference to the drawings.
まず、露光装置の構成を説明する。First, the configuration of the exposure apparatus will be explained.
載置台回転機構（１）例えば回転角度がパルス制御可能
なステッピングモータに連結して、回転可能な如く円板
状載置台（２）が設けられている。この載置台（２）の
載置面は、被処理体例えば半導体ウェハ（３）の直径よ
り小径となっている。また、この載置台（２）には、位
置決めされて搬送された半導体ウェハ（３）が中央の吸
着孔（４）で吸着固定可能な如く設置されている。Mounting Table Rotating Mechanism (1) A disc-shaped mounting table (2) is provided so as to be rotatable, for example, connected to a stepping motor whose rotation angle can be controlled by pulses. The mounting surface of this mounting table (2) has a diameter smaller than the diameter of the object to be processed, for example, a semiconductor wafer (3). Further, a semiconductor wafer (3) that has been positioned and transported is placed on this mounting table (2) so that it can be sucked and fixed by a suction hole (4) in the center.
ここで、載置台（２）上に載置された半導体ウェハ（３
）の周縁露光を行うために外周部を検知する必要がある
。この構成は次の通りである。即ち、−次元に並んだＬ
ＥＤからなるセンサ光源（５）が半導体ウェハ（３）の
一方面例えば下面側に設けられている。Here, the semiconductor wafer (3) placed on the mounting table (2)
) It is necessary to detect the outer periphery in order to perform peripheral edge exposure. This configuration is as follows. That is, L arranged in − dimension
A sensor light source (5) consisting of an ED is provided on one side of the semiconductor wafer (3), for example on the bottom side.
他方面には、レンズ（６）を介して結像される如く固体
撮像素子例えばＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ
Ｄｅｖｉｃｅ）を用いた一次元センサ（７）が設けら
れていて、半導体ウェハ（３）外周端部を検知可能な如
く検知部（８）が形成されている。On the other side, a solid-state image sensor such as a CCD (Charge Coupled
A one-dimensional sensor (7) using a semiconductor wafer (3) is provided, and a detection portion (8) is formed so as to be able to detect the outer peripheral edge of the semiconductor wafer (3).
また、周縁用露光部（９）が次のように構成されている
。露光用光例えばＵＶ光の光導管００）例えば光グラス
ファイバが設けられている。この光導管０■に導かれた
図示しない光源からの光を、半導体ウェハ（３）の上記
外周部を照射する如く露光照射体０１）が設けられてい
る。この露光照射体ＯＤを半導体ウェハ（３）回転の中
心方向に外周端付近を直進運動で位置調整可能な如く照
射体可動機構０２１例えばボールネジが設けられている
。この可動機構０２１と連結して回転駆動を伝える如く
駆動機構０３）例えばパルス制御されるステッピングモ
ータが設けられて、露光部（９）が構成されている。Further, the peripheral edge exposure section (9) is configured as follows. A light conduit 00 for exposure light, for example UV light, is provided, for example an optical glass fiber. An exposure irradiator 01) is provided so as to irradiate the outer periphery of the semiconductor wafer (3) with light from a light source (not shown) guided through the light pipe 02. An irradiator moving mechanism 021, for example, a ball screw, is provided so that the position of the exposure irradiator OD can be adjusted by linear movement near the outer peripheral end in the direction of the center of rotation of the semiconductor wafer (3). A drive mechanism 03), for example, a pulse-controlled stepping motor, is provided to connect with the movable mechanism 021 and transmit rotational drive, thereby forming an exposure section (9).
そして、上記検知部（８）と露光部（９）は制御部０４
）により制御され、命令信号や検知信号を送受信可能な
如く接続されている。The detection section (8) and the exposure section (9) are controlled by the control section 04.
) and are connected so that command signals and detection signals can be sent and received.
ここで、上記露光処理を実行するにあたり、上記半導体
ウェハ（３）の温度を調節する温度調節機構０５）が設
けられている。この温度調節機構ａつの構成を第２図及
び第３図に示す。上記載置台（２）の側面と所定の間隔
を開けて、半導体ウェハ（３）の周縁より大径で例えば
略リング状の温調体００が設けられている。この温調体
０６）は上記センサ光源（５）を回避するように、セン
サ光源（５）と対応する位置に切り欠き部が設けられて
いる。また、この温調体０ωの上面は、上記半導体ウェ
ハ（３）を載置台（２）に！！２置した時に、半導体ウ
ェハ（３）の下面との間隔Ａが例えば０．１〜１．０ｍ
ｍになるように設定されている。即ち、半導体ウェハ（
３）と温調体０６）との間隔Ａを設けることにより、半
導体ウェハ（３）と温調体０６）との接触を無くし重金
属等の塵の発生を防止している。Here, a temperature adjustment mechanism 05) is provided to adjust the temperature of the semiconductor wafer (3) when performing the exposure process. The configuration of this temperature control mechanism is shown in FIGS. 2 and 3. A temperature regulator 00 having a diameter larger than the periphery of the semiconductor wafer (3) and having a substantially ring shape, for example, is provided at a predetermined distance from the side surface of the mounting table (2). This temperature regulator 06) is provided with a notch at a position corresponding to the sensor light source (5) so as to avoid the sensor light source (5). Moreover, the upper surface of this temperature regulator 0ω is used as the mounting table (2) for the semiconductor wafer (3)! ! 2, the distance A from the bottom surface of the semiconductor wafer (3) is, for example, 0.1 to 1.0 m.
It is set to be m. That is, semiconductor wafer (
By providing the interval A between the semiconductor wafer (3) and the temperature regulator 06), contact between the semiconductor wafer (3) and the temperature regulator 06) is eliminated, and generation of dust such as heavy metals is prevented.
そして、温調体０６）には、上記半導体ウェハ（３）を
所望の温度に冷却するために冷却機構が設けられている
。この冷却機構は、上記温調体００の内部に冷却流体の
流路を設け、この流路に冷却流体を送流するようにした
ものである。上記冷却流体は液体もしくは気体でよく例
えば純水、Ｎ２、エアー等が用いられる。このような流
体は、上記温調体０ωに設けられた導入口０７）から温
調体００に導入され、排出口００から排出される。この
時、上記流体は、外部の冷却流体供給装置０９）から所
望の温度に調節されて供給される。さらに、温調体００
には、上記半導体ウェハ（３）を所望の温度に加熱する
ために加熱機構が設けられている。この加熱機構は、上
記温調体０ωに発熱体（図示せず）を埋設し、この発熱
体に電力を供給して加熱するものである。このようにし
て温度調節機構０９が設けられている。The temperature regulator 06) is provided with a cooling mechanism to cool the semiconductor wafer (3) to a desired temperature. In this cooling mechanism, a cooling fluid flow path is provided inside the temperature regulator 00, and the cooling fluid is sent through this flow path. The cooling fluid may be a liquid or a gas, such as pure water, N2, air, etc. Such a fluid is introduced into the temperature regulator 00 from an inlet 07) provided in the temperature regulator 0ω, and is discharged from an outlet 00. At this time, the fluid is supplied from an external cooling fluid supply device 09) after being adjusted to a desired temperature. Furthermore, temperature controller 00
A heating mechanism is provided in order to heat the semiconductor wafer (3) to a desired temperature. In this heating mechanism, a heating element (not shown) is embedded in the temperature regulator 0ω, and electric power is supplied to the heating element to heat it. In this way, the temperature adjustment mechanism 09 is provided.
次に、上述した露光装置による半導体ウェハ（３）の外
周部の露光方法を説明する。Next, a method for exposing the outer peripheral portion of the semiconductor wafer (3) using the exposure apparatus described above will be described.
まず、図示しない搬送機構例えばハンドリングアームで
被処理体例えばレジスト等を塗布された半導体ウェハ（
３）を搬入する。そして、載置台（２）の回転軸と同軸
的に半導体ウェハ（３）の中心を位置決めして、載置台
（２）上に載置する。この載置は、載置台（２）の吸着
孔（４）を通して真空発生器等のバキュームエアにより
、半導体ウェハ（３）を載置台（２）に吸着する。First, a transport mechanism (not shown), such as a handling arm, first moves the object to be processed, such as a semiconductor wafer coated with resist, etc.
3). Then, the center of the semiconductor wafer (3) is positioned coaxially with the rotation axis of the mounting table (2), and the semiconductor wafer (3) is placed on the mounting table (2). In this mounting, the semiconductor wafer (3) is attracted to the mounting table (2) by vacuum air from a vacuum generator or the like through the suction hole (4) of the mounting table (2).
この時、上記半導体ウェハ（３）は前工程で加熱されて
いるため、正確な処理を実行するため冷却する必要があ
る。このことに対応して、予め上記温調体０６）を冷却
しておく。この冷却は、冷却流体供給装置０９）から所
望の温度例えば２５°Ｃに調節された流体を、導入口０
７）から温調体０６）に供給する。すると、冷却流体が
温調体００内を循環して温調体０ωが上記温度に冷却さ
れ、冷却流体は排出口０８）から排出される。このこと
により、温調体００近傍雰囲気が上記所望の温度に冷却
され、この雰囲気に設置されている半導体ウェハ（３）
が温調される。At this time, since the semiconductor wafer (3) has been heated in the previous process, it is necessary to cool it in order to perform accurate processing. Corresponding to this, the temperature regulator 06) is cooled in advance. This cooling is performed by supplying fluid adjusted to a desired temperature, for example, 25°C, from the cooling fluid supply device 09) to the inlet 0.
7) to the temperature regulator 06). Then, the cooling fluid circulates within the temperature regulator 00, and the temperature regulator 0ω is cooled to the above temperature, and the cooling fluid is discharged from the discharge port 08). As a result, the atmosphere near the temperature controller 00 is cooled to the desired temperature, and the semiconductor wafer (3) placed in this atmosphere is
temperature is controlled.
そして、制御部０４）からの信号により露光処理を開始
する。Then, exposure processing is started in response to a signal from the control unit 04).
載置台（２）が載置台回転機構（１）により回転を始め
半導体ウェハ（３）を回転させる。この回転により検知
部（８）のセンサ（７）が走査され、半導体ウェハ（３
）の回転中心から外周部までの距離を検知する。そして
、算出された半導体ウェハ（３）外側縁部の情報を制御
部０４）内の図示しない記憶素子に記憶する。この記憶
された情報から予め定められた周縁露光に必要な処理幅
を算出し、この算出結果により上記露光部（９）による
照射位置を制御する。そして、算出した信号により可動
機構０２１と、駆動機構０３）を制御して、半導体ウェ
ハ（３）の外周部を照射する。つまり、算出された露光
する位置を被処理体である半導体ウェハ（３）と相対的
に移動して露光を行う。The mounting table (2) starts rotating by the mounting table rotation mechanism (1) and rotates the semiconductor wafer (3). Due to this rotation, the sensor (7) of the detection unit (8) is scanned, and the semiconductor wafer (3) is scanned.
) detects the distance from the rotation center to the outer periphery. Then, the calculated information on the outer edge of the semiconductor wafer (3) is stored in a storage element (not shown) in the control unit 04). The processing width necessary for predetermined peripheral edge exposure is calculated from this stored information, and the irradiation position by the exposure section (9) is controlled based on the calculation result. Then, the movable mechanism 021 and the drive mechanism 03) are controlled by the calculated signal to irradiate the outer peripheral portion of the semiconductor wafer (3). That is, exposure is performed by moving the calculated exposure position relative to the semiconductor wafer (3) that is the object to be processed.
その後、所望の露光が終了すると、半導体ウェハ（３）
を図示しない搬送機構で搬出して、露光処理が完了する
。そして、搬出した半導体ウェハ（３）は図示しない次
工程の処理装置により、露光された半導体ウェハ（３）
外周部のレジスト膜等が現像・洗浄される。このことに
より、半導体ウェハの周縁部に形成されたレジスト等が
除去される。After that, when the desired exposure is completed, the semiconductor wafer (3)
is carried out by a transport mechanism (not shown), and the exposure process is completed. Then, the semiconductor wafer (3) that has been carried out is processed into a semiconductor wafer (3) that has been exposed to light by a processing device for the next process (not shown).
The resist film and the like on the outer periphery are developed and cleaned. As a result, resist and the like formed on the peripheral edge of the semiconductor wafer are removed.
上記実施例では、露光処理を行なうに際し、加熱された
状態の半導体ウェハを、所望の温度の冷却流体を用いて
冷却したものについて説明したが、これ心限定するもの
ではない。例えば所定の温度以上に冷却した冷却流体を
用いて半導体ウェハを急激に冷却し、この後、温調体に
設けられた加熱機構で所定の温度に調節しても上記実施
例と同様の効果が得られる。In the above embodiments, a heated semiconductor wafer is cooled using a cooling fluid at a desired temperature during exposure processing, but the present invention is not limited to this. For example, even if a semiconductor wafer is rapidly cooled using a cooling fluid cooled to a predetermined temperature or higher, and then the temperature is adjusted to a predetermined temperature using a heating mechanism provided in a temperature regulator, the same effect as in the above embodiment can be obtained. can get.
また、上記実施例の温調体は略リング状のものを使用し
て説明したが、半導体ウェハを所定の温度に調節できる
ものなら何れでもよい。例えば、第４図に示すように、
露光照射領域の下方に、半リング状の温調体ＱＯを設け
ても良い。また、第５図に示すように、露光照射体の下
方の部分的領域のみに、温調体（２１）を設けても上記
実施例と同様な効果を得ることができる。Further, although the temperature regulating body in the above embodiment has been described using a substantially ring-shaped temperature regulating body, any temperature regulating body may be used as long as it can adjust the temperature of the semiconductor wafer to a predetermined temperature. For example, as shown in Figure 4,
A half-ring-shaped temperature regulator QO may be provided below the exposure irradiation area. Further, as shown in FIG. 5, the same effect as in the above embodiment can be obtained even if the temperature regulator (21) is provided only in a partial region below the exposure body.
さらに、上記実施例では半導体ウェハ（３）の表面の処
理について説明したが、外周部の処理であればよく、裏
面の露光処理でも同様に処理できることは言うまでもな
い。Further, in the above embodiments, the front surface of the semiconductor wafer (3) has been described, but it is only necessary to treat the outer periphery, and it goes without saying that the back surface can be exposed in the same manner.
さらにまた、上記実施例では被処理体に半導体ウェハを
用いて説明したが、膜塗布された被処理体であれば何れ
でもよく、液晶表示装置等角形ガラス基板を処理しても
よい。Furthermore, in the above embodiments, a semiconductor wafer was used as the object to be processed, but any object coated with a film may be used, and a glass substrate having a shape such as a liquid crystal display device may be processed.
さらにまた、上記実施例では露光に際し回転軸を固定さ
せて半導体ウェハ（３ンの外周部の露光を行ったが、半
導体ウェハ（３）の外周縁部の情報により回転軸位置を
調整してもよく、要するに半導体ウェハ（３）を温度調
節して露光処理するものなら何れでもよい。Furthermore, in the above embodiment, the rotation axis was fixed during exposure to expose the outer periphery of the semiconductor wafer (3), but the rotation axis position could also be adjusted based on information about the outer periphery of the semiconductor wafer (3). In short, any method may be used as long as the temperature of the semiconductor wafer (3) is adjusted and the exposure process is performed.
以上述べたようにこの実施例によれば、被処理体の周縁
に光を照射し、上記被処理体を露光する露光方法におい
て、少なくとも上記被処理体の光照射部の温度を調節し
た状態で露光するので、被処理体の温度コントロールを
正確に行なえ、このことによりレジストの取り残し等を
無くし、ゴ旦等の発生を最小限に押さえられる。As described above, according to this embodiment, in the exposure method of exposing the object to light by irradiating the peripheral edge of the object, at least the temperature of the light irradiation part of the object to be processed is adjusted. Since it is exposed to light, the temperature of the object to be processed can be accurately controlled, thereby eliminating any resist left behind and minimizing the occurrence of lumps and the like.
第１図は本発明の一実施例を説明するための露光装置の
構成図、第２図は第１図の露光装置の被処理体の温調を
行なう機構を説明する側面図、第３図は第２図装置の上
面図、第４図及び第５図は第２図の被処理体の温調を行
なう機構の他の実施例を示す説明図である。
（２）・・Ｒ置台、 （３）・・半導体ウェハ、ａつ・
・温度調節機構、
０６）・
・温調体、
０′ｒ）・
・導入口、
０８）・
・排出口。FIG. 1 is a configuration diagram of an exposure apparatus for explaining an embodiment of the present invention, FIG. 2 is a side view for explaining a mechanism for controlling the temperature of an object to be processed in the exposure apparatus of FIG. 1, and FIG. FIG. 2 is a top view of the apparatus, and FIGS. 4 and 5 are explanatory views showing other embodiments of the mechanism for controlling the temperature of the object to be processed shown in FIG. 2. (2)...R stand, (3)...semiconductor wafer, a...temperature control mechanism, 06)...temperature control body, 0'r)...inlet, 08)...discharge port.
Claims (1)
光方法において、少なくとも上記被処理体の光照射部の
温度を調節した状態で露光することを特徴とする露光方
法。An exposure method in which the object to be processed is exposed to light by irradiating a peripheral edge of the object to light, the exposure method being characterized in that the exposure is performed while at least the temperature of the light irradiation part of the object to be processed is adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1221135A JP2769483B2 (en) | 1989-08-28 | 1989-08-28 | Resist processing apparatus and resist processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1221135A JP2769483B2 (en) | 1989-08-28 | 1989-08-28 | Resist processing apparatus and resist processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0383322A true JPH0383322A (en) | 1991-04-09 |
| JP2769483B2 JP2769483B2 (en) | 1998-06-25 |
Family
ID=16762007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1221135A Expired - Fee Related JP2769483B2 (en) | 1989-08-28 | 1989-08-28 | Resist processing apparatus and resist processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2769483B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013172120A (en) * | 2012-02-23 | 2013-09-02 | Tokyo Electron Ltd | Periphery exposure method and periphery exposure device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225576A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Exposure method of photo-resist |
| JPS5473578A (en) * | 1977-11-24 | 1979-06-12 | Toshiba Corp | Pattern exposure method of semiconductor substrate and pattern exposure apparatus |
| JPH01132124A (en) * | 1987-08-28 | 1989-05-24 | Teru Kyushu Kk | Exposure method and apparatus thereof |
| JPH0287518A (en) * | 1988-09-26 | 1990-03-28 | Ushio Inc | Exposure of wafer periphery |
| JPH02148830A (en) * | 1988-11-30 | 1990-06-07 | Ushio Inc | Wafer periphery exposure device |
-
1989
- 1989-08-28 JP JP1221135A patent/JP2769483B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5225576A (en) * | 1975-08-22 | 1977-02-25 | Hitachi Ltd | Exposure method of photo-resist |
| JPS5473578A (en) * | 1977-11-24 | 1979-06-12 | Toshiba Corp | Pattern exposure method of semiconductor substrate and pattern exposure apparatus |
| JPH01132124A (en) * | 1987-08-28 | 1989-05-24 | Teru Kyushu Kk | Exposure method and apparatus thereof |
| JPH0287518A (en) * | 1988-09-26 | 1990-03-28 | Ushio Inc | Exposure of wafer periphery |
| JPH02148830A (en) * | 1988-11-30 | 1990-06-07 | Ushio Inc | Wafer periphery exposure device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013172120A (en) * | 2012-02-23 | 2013-09-02 | Tokyo Electron Ltd | Periphery exposure method and periphery exposure device |
| KR20130097119A (en) | 2012-02-23 | 2013-09-02 | 도쿄엘렉트론가부시키가이샤 | Peripheral exposure method and apparatus therefor |
| US9268230B2 (en) | 2012-02-23 | 2016-02-23 | Tokyo Electron Limited | Peripheral exposure method and apparatus therefor |
| TWI547969B (en) * | 2012-02-23 | 2016-09-01 | Tokyo Electron Ltd | Peripheral exposure method and peripheral exposure device |
| US10126665B2 (en) | 2012-02-23 | 2018-11-13 | Tokyo Electron Limited | Peripheral exposure method and apparatus therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2769483B2 (en) | 1998-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3516195B2 (en) | Method and apparatus for forming coating film | |
| US7641404B2 (en) | Substrate processing apparatus | |
| US7087118B2 (en) | Coating film forming apparatus and coating unit | |
| US7208066B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP5841389B2 (en) | Substrate processing apparatus and substrate processing method | |
| KR970006206B1 (en) | Automatic coating system | |
| US7364376B2 (en) | Substrate processing apparatus | |
| US20030139852A1 (en) | Method of determining retreat permission position of carrier arm and teaching device thereof | |
| JP2003178945A (en) | Substrate processing device | |
| JP6970759B2 (en) | Board processing equipment, board processing method and computer-readable recording medium | |
| JPH0383322A (en) | Exposure method | |
| JP3004828B2 (en) | Rotary processing apparatus, substrate processing system, positioning method and substrate processing method | |
| JPH10214782A (en) | Aligner | |
| JP2004014670A (en) | Substrate processing apparatus and method therefor | |
| JPH11135427A (en) | Processing apparatus | |
| JP3641162B2 (en) | Coating film forming apparatus and method, and pattern forming method | |
| JP2005123433A (en) | Heat treatment apparatus, method for detecting and for removing foreign substance | |
| JPH05343499A (en) | Transferring apparatus for treated object and driving method therefor | |
| JP2940620B2 (en) | Liquid processing equipment | |
| JP2607382B2 (en) | Ashing apparatus and ashing method | |
| JP3219925B2 (en) | Peripheral exposure apparatus and peripheral exposure method | |
| JP2838570B2 (en) | Peripheral exposure equipment | |
| JP3741462B2 (en) | Substrate notch detection apparatus and substrate processing apparatus | |
| JP4113822B2 (en) | Edge exposure apparatus, edge exposure method, and substrate processing apparatus including the same | |
| JP2887692B2 (en) | Heating equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |