JPS53109475A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53109475A JPS53109475A JP2384777A JP2384777A JPS53109475A JP S53109475 A JPS53109475 A JP S53109475A JP 2384777 A JP2384777 A JP 2384777A JP 2384777 A JP2384777 A JP 2384777A JP S53109475 A JPS53109475 A JP S53109475A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- manufacture
- semiconductor device
- semiconductor
- utilization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain the thin layer of desired conduction type in the substrate, by making unnecessary external heating, through the utilization of temperature rise in the substrate caused by the radiation on the semiconductor substrate with the semiconductor ion beam in large current accelerated.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2384777A JPS53109475A (en) | 1977-03-07 | 1977-03-07 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2384777A JPS53109475A (en) | 1977-03-07 | 1977-03-07 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53109475A true JPS53109475A (en) | 1978-09-25 |
Family
ID=12121788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2384777A Pending JPS53109475A (en) | 1977-03-07 | 1977-03-07 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53109475A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61214511A (en) * | 1985-03-20 | 1986-09-24 | Sharp Corp | Crystal growth method |
US6692648B2 (en) | 2000-12-22 | 2004-02-17 | Applied Materials Inc. | Method of plasma heating and etching a substrate |
US6709609B2 (en) | 2000-12-22 | 2004-03-23 | Applied Materials Inc. | Plasma heating of a substrate with subsequent high temperature etching |
JP2006510196A (en) * | 2002-12-12 | 2006-03-23 | エピオン コーポレーション | Recrystallization of semiconductor surface film by high energy cluster irradiation and semiconductor doping method |
-
1977
- 1977-03-07 JP JP2384777A patent/JPS53109475A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61214511A (en) * | 1985-03-20 | 1986-09-24 | Sharp Corp | Crystal growth method |
US6692648B2 (en) | 2000-12-22 | 2004-02-17 | Applied Materials Inc. | Method of plasma heating and etching a substrate |
US6709609B2 (en) | 2000-12-22 | 2004-03-23 | Applied Materials Inc. | Plasma heating of a substrate with subsequent high temperature etching |
JP2006510196A (en) * | 2002-12-12 | 2006-03-23 | エピオン コーポレーション | Recrystallization of semiconductor surface film by high energy cluster irradiation and semiconductor doping method |
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