JPS53109475A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53109475A
JPS53109475A JP2384777A JP2384777A JPS53109475A JP S53109475 A JPS53109475 A JP S53109475A JP 2384777 A JP2384777 A JP 2384777A JP 2384777 A JP2384777 A JP 2384777A JP S53109475 A JPS53109475 A JP S53109475A
Authority
JP
Japan
Prior art keywords
substrate
manufacture
semiconductor device
semiconductor
utilization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2384777A
Other languages
Japanese (ja)
Inventor
Masao Tamura
Kunihiro Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2384777A priority Critical patent/JPS53109475A/en
Publication of JPS53109475A publication Critical patent/JPS53109475A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the thin layer of desired conduction type in the substrate, by making unnecessary external heating, through the utilization of temperature rise in the substrate caused by the radiation on the semiconductor substrate with the semiconductor ion beam in large current accelerated.
COPYRIGHT: (C)1978,JPO&Japio
JP2384777A 1977-03-07 1977-03-07 Manufacture for semiconductor device Pending JPS53109475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2384777A JPS53109475A (en) 1977-03-07 1977-03-07 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2384777A JPS53109475A (en) 1977-03-07 1977-03-07 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53109475A true JPS53109475A (en) 1978-09-25

Family

ID=12121788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2384777A Pending JPS53109475A (en) 1977-03-07 1977-03-07 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53109475A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214511A (en) * 1985-03-20 1986-09-24 Sharp Corp Crystal growth method
US6692648B2 (en) 2000-12-22 2004-02-17 Applied Materials Inc. Method of plasma heating and etching a substrate
US6709609B2 (en) 2000-12-22 2004-03-23 Applied Materials Inc. Plasma heating of a substrate with subsequent high temperature etching
JP2006510196A (en) * 2002-12-12 2006-03-23 エピオン コーポレーション Recrystallization of semiconductor surface film by high energy cluster irradiation and semiconductor doping method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214511A (en) * 1985-03-20 1986-09-24 Sharp Corp Crystal growth method
US6692648B2 (en) 2000-12-22 2004-02-17 Applied Materials Inc. Method of plasma heating and etching a substrate
US6709609B2 (en) 2000-12-22 2004-03-23 Applied Materials Inc. Plasma heating of a substrate with subsequent high temperature etching
JP2006510196A (en) * 2002-12-12 2006-03-23 エピオン コーポレーション Recrystallization of semiconductor surface film by high energy cluster irradiation and semiconductor doping method

Similar Documents

Publication Publication Date Title
JPS53128971A (en) Manufacture of electron radiation cathode
JPS5395571A (en) Semiconductor device
JPS53109475A (en) Manufacture for semiconductor device
JPS5225572A (en) Resin-seal type semiconductor device
JPS5258579A (en) Temperature detector
JPS524167A (en) Manufacturing process of p-n junction type solid element
JPS542070A (en) Manufacture for semiconductor element
JPS5399553A (en) Heat radiating body
JPS547860A (en) Manufacture for semiconductor device
JPS537854A (en) Heating unit for electrical mosquito-catcher
JPS547891A (en) Manufacture for planar semiconductor light emission device
JPS5267978A (en) Boiling-cooling type semiconductor unit
JPS53110470A (en) Manufacture for semiconductor device
JPS5372453A (en) Manufacture for semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS5396757A (en) Production of semiconductor device
JPS51112165A (en) Direct heat type thermal electron emision cathode
JPS5379461A (en) Semiconductor device and its manufacturing process
JPS5296878A (en) Manufacture of semiconductor laser element
JPS51150964A (en) Hot cathode
JPS53102669A (en) Manufacture for semiconductor device
JPS5376441A (en) Specimen heating device
JPS5429968A (en) Manufacture of semiconductor device
JPS53108281A (en) Manufacture of semiconductor device
JPS53105977A (en) Manufacture of semiconductor device