JPS5443482A - Junction destruction type programable rom - Google Patents

Junction destruction type programable rom

Info

Publication number
JPS5443482A
JPS5443482A JP10884477A JP10884477A JPS5443482A JP S5443482 A JPS5443482 A JP S5443482A JP 10884477 A JP10884477 A JP 10884477A JP 10884477 A JP10884477 A JP 10884477A JP S5443482 A JPS5443482 A JP S5443482A
Authority
JP
Japan
Prior art keywords
layer
write
current
selectively
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10884477A
Other languages
Japanese (ja)
Other versions
JPS6032983B2 (en
Inventor
Katsumi Ogiue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52108844A priority Critical patent/JPS6032983B2/en
Publication of JPS5443482A publication Critical patent/JPS5443482A/en
Publication of JPS6032983B2 publication Critical patent/JPS6032983B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a ROM which prevents the destruction of the peripheral circuit by lowering the write-in voltage and decreasing the write-in current. CONSTITUTION:N<+>-buried layer 2 and P<+>-isolation layer 4 are provided selectively to P type substrate 1 to form N-epitaxial layer 3. Then P-type base layer 5 and N- type emitter layer 6 are formed through diffusion, and Si3N412 is laminated on SiO27 on the surface. Film 7 and 12 are etched selectively to be used as the mask, and layer 5 and 6 are etched to expose the junction between C and B. Mask 7 and 12 are removed with coating of insulating film 7, and then the window is drilled selectively to form the Al wiring selectively. In such constitution, inverse layer 11 is caused on the exposed surface of the base layer by the srite-in voltage to cause the field concent ration. As a result, the breakdown voltage and then the write-in voltage are lowered. The write-in current also gather at the field concentration part to cause the junction destruction necessary for writing via small amount of current, thus reducing the write-in current.
JP52108844A 1977-09-12 1977-09-12 Junction-destructive programmable ROM Expired JPS6032983B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52108844A JPS6032983B2 (en) 1977-09-12 1977-09-12 Junction-destructive programmable ROM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52108844A JPS6032983B2 (en) 1977-09-12 1977-09-12 Junction-destructive programmable ROM

Publications (2)

Publication Number Publication Date
JPS5443482A true JPS5443482A (en) 1979-04-06
JPS6032983B2 JPS6032983B2 (en) 1985-07-31

Family

ID=14495004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52108844A Expired JPS6032983B2 (en) 1977-09-12 1977-09-12 Junction-destructive programmable ROM

Country Status (1)

Country Link
JP (1) JPS6032983B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2512999A1 (en) * 1981-09-14 1983-03-18 Radiotechnique Compelec SEMICONDUCTOR DEVICE FORMING PROGRAMMABLE DEAD MEMORY WITH TRANSISTORS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2512999A1 (en) * 1981-09-14 1983-03-18 Radiotechnique Compelec SEMICONDUCTOR DEVICE FORMING PROGRAMMABLE DEAD MEMORY WITH TRANSISTORS

Also Published As

Publication number Publication date
JPS6032983B2 (en) 1985-07-31

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