JPS55150271A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55150271A
JPS55150271A JP5712079A JP5712079A JPS55150271A JP S55150271 A JPS55150271 A JP S55150271A JP 5712079 A JP5712079 A JP 5712079A JP 5712079 A JP5712079 A JP 5712079A JP S55150271 A JPS55150271 A JP S55150271A
Authority
JP
Japan
Prior art keywords
emitter
base
comb
bonding pad
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5712079A
Other languages
Japanese (ja)
Inventor
Hirokazu Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5712079A priority Critical patent/JPS55150271A/en
Publication of JPS55150271A publication Critical patent/JPS55150271A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent damage of a semiconductor device due to current concentration by forming holes opposed in comb-like shape at the insulating film on a base and an emitter with comb-like shape portions and forming electrodes extended through the film and the holes as a line bonding pad. CONSTITUTION:An SiO2 film 9 is formed on the base and the emitter junction surface including the comb-like portion formed by the base layer 2 and the emitter layer 3 on a semiconductor substrate 1, and a base connecting hole 10 and an emitter connecting hole 11 are formed corresponding to the comb-like portion. No connecting portion is formed at the portion 12 where the finger of the base is partly superimposed with the line bonding pad at the emitter side. Aluminum base and emitter electrodes 4 and 5 are formed through the holes 11 thereon, the electrode 4 is partly extended on an SiO2 film on the base finger and used as the emitter side line bonding pad 13. When the emitter is thus divided, the current is dispersed and reduced in concentration, the safety operating region characteristics are improved particularly in case of reveser bias.
JP5712079A 1979-05-11 1979-05-11 Semiconductor device Pending JPS55150271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5712079A JPS55150271A (en) 1979-05-11 1979-05-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5712079A JPS55150271A (en) 1979-05-11 1979-05-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55150271A true JPS55150271A (en) 1980-11-22

Family

ID=13046678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5712079A Pending JPS55150271A (en) 1979-05-11 1979-05-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55150271A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589369A (en) * 1981-07-08 1983-01-19 Matsushita Electronics Corp Transistor
JPS5818964A (en) * 1981-07-28 1983-02-03 Fujitsu Ltd Semiconductor device
JPS58188159A (en) * 1982-04-27 1983-11-02 Nec Corp Semiconductor device
JPH02110935A (en) * 1988-10-19 1990-04-24 Sanyo Electric Co Ltd Transistor for high-speed switching use
JPH055524U (en) * 1991-07-04 1993-01-26 アラコ株式会社 Curtain device for vehicle
KR100376222B1 (en) * 1995-09-23 2003-07-18 페어차일드코리아반도체 주식회사 Secondary breakdown energy ability improved bipolar transistor
JP2010165911A (en) * 2009-01-16 2010-07-29 Rohm Co Ltd Bipolar type semiconductor device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54100671A (en) * 1978-01-26 1979-08-08 Fuji Electric Co Ltd Transistor
JPS54117689A (en) * 1978-03-03 1979-09-12 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54100671A (en) * 1978-01-26 1979-08-08 Fuji Electric Co Ltd Transistor
JPS54117689A (en) * 1978-03-03 1979-09-12 Mitsubishi Electric Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589369A (en) * 1981-07-08 1983-01-19 Matsushita Electronics Corp Transistor
JPS5818964A (en) * 1981-07-28 1983-02-03 Fujitsu Ltd Semiconductor device
JPH0156531B2 (en) * 1981-07-28 1989-11-30 Fujitsu Ltd
JPS58188159A (en) * 1982-04-27 1983-11-02 Nec Corp Semiconductor device
JPH02110935A (en) * 1988-10-19 1990-04-24 Sanyo Electric Co Ltd Transistor for high-speed switching use
JPH055524U (en) * 1991-07-04 1993-01-26 アラコ株式会社 Curtain device for vehicle
KR100376222B1 (en) * 1995-09-23 2003-07-18 페어차일드코리아반도체 주식회사 Secondary breakdown energy ability improved bipolar transistor
JP2010165911A (en) * 2009-01-16 2010-07-29 Rohm Co Ltd Bipolar type semiconductor device and method of manufacturing the same

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