JPS5496984A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5496984A
JPS5496984A JP401778A JP401778A JPS5496984A JP S5496984 A JPS5496984 A JP S5496984A JP 401778 A JP401778 A JP 401778A JP 401778 A JP401778 A JP 401778A JP S5496984 A JPS5496984 A JP S5496984A
Authority
JP
Japan
Prior art keywords
semiconductor laser
groove
electrode forming
reliability
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP401778A
Other languages
Japanese (ja)
Inventor
Hisao Sumibe
Toshio Tanaka
Makoto Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP401778A priority Critical patent/JPS5496984A/en
Publication of JPS5496984A publication Critical patent/JPS5496984A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To enhance the laser characteristics, the yield and the reliability by providing the electrode and the active region near the groove part of the electrode forming crystal layer on the surface of the semiconductor laser crystal.
CONSTITUTION: Electrode forming crystal layers 14, 15, 16, 17 and 25 are provided on the surface of semiconductor laser crystal 13, along with groove part 26 formed by etching part of the electrode forming crystal layer. At the same time, electrodes 27 and 28 are formed near groove 26, and active regions 19 and 20 are provided under groove 26 respectively. Thus, the laser characteristics including the temperature property as well as the yild and the reliability can be enhanced.
COPYRIGHT: (C)1979,JPO&Japio
JP401778A 1978-01-17 1978-01-17 Semiconductor laser device Pending JPS5496984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP401778A JPS5496984A (en) 1978-01-17 1978-01-17 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP401778A JPS5496984A (en) 1978-01-17 1978-01-17 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5496984A true JPS5496984A (en) 1979-07-31

Family

ID=11573192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP401778A Pending JPS5496984A (en) 1978-01-17 1978-01-17 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5496984A (en)

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