JPS5533075A - Mesa semiconductor device - Google Patents

Mesa semiconductor device

Info

Publication number
JPS5533075A
JPS5533075A JP10655678A JP10655678A JPS5533075A JP S5533075 A JPS5533075 A JP S5533075A JP 10655678 A JP10655678 A JP 10655678A JP 10655678 A JP10655678 A JP 10655678A JP S5533075 A JPS5533075 A JP S5533075A
Authority
JP
Japan
Prior art keywords
mesa
semiconductor device
mesa portion
layer
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10655678A
Other languages
Japanese (ja)
Inventor
Shigenari Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10655678A priority Critical patent/JPS5533075A/en
Publication of JPS5533075A publication Critical patent/JPS5533075A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent mechanical damage of the side surface of a mesa semiconductor device by surrounding the outside of the mesa portion with the same high crystal layer. CONSTITUTION:When the same high annular mesa semiconductor crystal layer is formed around the mesa portion of the same conductivity epitaxial layer 12, reverse conductivity type diffused layer 13, protecting film 14 and electrode 15 on a low specific resistance semiconductor substrate 11, external force by pincette or the like is applied to the outside annular crystal but not applied to the side surface of the mesa portion having pn junction. Accordingly, it can obtain high quality and performance semiconductor device.
JP10655678A 1978-08-30 1978-08-30 Mesa semiconductor device Pending JPS5533075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10655678A JPS5533075A (en) 1978-08-30 1978-08-30 Mesa semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10655678A JPS5533075A (en) 1978-08-30 1978-08-30 Mesa semiconductor device

Publications (1)

Publication Number Publication Date
JPS5533075A true JPS5533075A (en) 1980-03-08

Family

ID=14436594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10655678A Pending JPS5533075A (en) 1978-08-30 1978-08-30 Mesa semiconductor device

Country Status (1)

Country Link
JP (1) JPS5533075A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162163U (en) * 1982-04-23 1983-10-28 日立工機株式会社 electrophotographic equipment
JPS58200273A (en) * 1982-05-18 1983-11-21 Fuji Electric Co Ltd Electrophotographic device
JPH0298175A (en) * 1988-10-04 1990-04-10 Nec Corp Ultrahigh frequency diode
JPH0368525U (en) * 1989-11-06 1991-07-05
US5481351A (en) * 1993-03-18 1996-01-02 Hitachi Koki Co., Ltd. Electrophotographic recording apparatus having improved residual toner cleaning function

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162163U (en) * 1982-04-23 1983-10-28 日立工機株式会社 electrophotographic equipment
JPS58200273A (en) * 1982-05-18 1983-11-21 Fuji Electric Co Ltd Electrophotographic device
JPH0298175A (en) * 1988-10-04 1990-04-10 Nec Corp Ultrahigh frequency diode
JPH0368525U (en) * 1989-11-06 1991-07-05
US5481351A (en) * 1993-03-18 1996-01-02 Hitachi Koki Co., Ltd. Electrophotographic recording apparatus having improved residual toner cleaning function

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