JPS5575254A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5575254A JPS5575254A JP14778278A JP14778278A JPS5575254A JP S5575254 A JPS5575254 A JP S5575254A JP 14778278 A JP14778278 A JP 14778278A JP 14778278 A JP14778278 A JP 14778278A JP S5575254 A JPS5575254 A JP S5575254A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- voltage
- type
- capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 10
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To internally contain a substrate voltage self-bias circuit in a semiconductor device by providing a reverse conductivity type semiconductor layer to the substrate on the back or in parallel with the substrate plane. CONSTITUTION:An n<+>-type layer 3 is provided on the surface of a p-type substrate with a gate oxide film 5 and a gate electrode 4 provided thereon. An n<+>-type layer 2 is formed on the back surface of the substrate 1. The layer 2 is connected to an external power supply, and the substrate 1 is connected to a substrate voltage self- bias circuit. The capacity of the pn-junction formed by the substrate 1 and the layer 2 bicomes floated capacity. The applied voltage is fixed to the lower voltage than the substrate voltage. According to this configuration, it can restrict the variation of the substrate voltage to low level.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14778278A JPS5575254A (en) | 1978-12-01 | 1978-12-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14778278A JPS5575254A (en) | 1978-12-01 | 1978-12-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5575254A true JPS5575254A (en) | 1980-06-06 |
Family
ID=15438059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14778278A Pending JPS5575254A (en) | 1978-12-01 | 1978-12-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575254A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58199558A (en) * | 1982-05-17 | 1983-11-19 | Matsushita Electronics Corp | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110285A (en) * | 1975-03-24 | 1976-09-29 | Hitachi Ltd | DENSHIDOCHOYOSHUSEKIKAIRO |
JPS53102683A (en) * | 1977-02-18 | 1978-09-07 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-12-01 JP JP14778278A patent/JPS5575254A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110285A (en) * | 1975-03-24 | 1976-09-29 | Hitachi Ltd | DENSHIDOCHOYOSHUSEKIKAIRO |
JPS53102683A (en) * | 1977-02-18 | 1978-09-07 | Toshiba Corp | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58199558A (en) * | 1982-05-17 | 1983-11-19 | Matsushita Electronics Corp | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
JPS5458378A (en) | Semiconductor device and its usage | |
JPS57208177A (en) | Semiconductor negative resistance element | |
JPS55102268A (en) | Protecting circuit for semiconductor device | |
JPS5575254A (en) | Semiconductor device | |
JPS5734363A (en) | Semiconductor device | |
JPS5533075A (en) | Mesa semiconductor device | |
JPS5745980A (en) | Amorphous solar battery and manufacture thereof | |
JPS556847A (en) | Semiconductor device | |
JPS5544712A (en) | Storing charge in charge coupled device | |
JPS644083A (en) | Photovoltaic device | |
JPS5779657A (en) | Semiconductor device | |
JPS55151359A (en) | Semiconductor device | |
JPS5660045A (en) | Semiconductor device | |
JPS5367388A (en) | Memory semiconductor device | |
JPS5377476A (en) | Semiconductor integrated circuit device | |
JPS5587476A (en) | Semiconductor device | |
JPS54146545A (en) | Constant current integrated circuit element | |
JPS5739572A (en) | Transistor | |
JPS553660A (en) | Solar cell | |
JPS54136287A (en) | Photo sensitive switching element | |
JPS5797668A (en) | Semiconductor device | |
JPS572577A (en) | Semiconductor device | |
JPS57103356A (en) | Mos semiconductor device | |
JPS5766667A (en) | Semiconductor device |