JPS5797668A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5797668A JPS5797668A JP17602780A JP17602780A JPS5797668A JP S5797668 A JPS5797668 A JP S5797668A JP 17602780 A JP17602780 A JP 17602780A JP 17602780 A JP17602780 A JP 17602780A JP S5797668 A JPS5797668 A JP S5797668A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- field plate
- titan
- interface
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent the lowering of withstand voltage by providing a part directly under the field plate with a film of titan or titan-tungusten in a transistor having a field plate. CONSTITUTION:A silicon substrate 1 of N type is provided with a P<+> diffusion layer 2 while a part of the P<+> diffusion layer 2 is provided with an N-diffusion layer 5. P<+> diffusion layer 2 is provided with an electrode 4 and the N-diffusion layer 5 is provided with an electrode 6 while being provided with a field plate 7 en bloc with the electrode 6. The field plate 4 extends a depletion layer in the interface with a silicon oxide film 3 on the surface to prevent the electric field concentration in a PN juncture near the interface while when the silicon oxide film 3 is thickened, the interface charge increases to prevent a depletion layer from extending in the low voltage. Accordingly, when the film of titan or titan-tungusten is provided directly under the field plate, the interface charge can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17602780A JPS5797668A (en) | 1980-12-10 | 1980-12-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17602780A JPS5797668A (en) | 1980-12-10 | 1980-12-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5797668A true JPS5797668A (en) | 1982-06-17 |
Family
ID=16006439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17602780A Pending JPS5797668A (en) | 1980-12-10 | 1980-12-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797668A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6084852A (en) * | 1984-09-17 | 1985-05-14 | Hitachi Ltd | Manufacture of resin-molded ic |
| US5665634A (en) * | 1993-04-28 | 1997-09-09 | Harris Corporation | Method of increasing maximum terminal voltage of a semiconductor device |
-
1980
- 1980-12-10 JP JP17602780A patent/JPS5797668A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6084852A (en) * | 1984-09-17 | 1985-05-14 | Hitachi Ltd | Manufacture of resin-molded ic |
| JPH0219627B2 (en) * | 1984-09-17 | 1990-05-02 | Hitachi Ltd | |
| US5665634A (en) * | 1993-04-28 | 1997-09-09 | Harris Corporation | Method of increasing maximum terminal voltage of a semiconductor device |
| US6008512A (en) * | 1993-04-28 | 1999-12-28 | Intersil Corporation | Semiconductor device with increased maximum terminal voltage |
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