JPS6428926A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6428926A
JPS6428926A JP18588087A JP18588087A JPS6428926A JP S6428926 A JPS6428926 A JP S6428926A JP 18588087 A JP18588087 A JP 18588087A JP 18588087 A JP18588087 A JP 18588087A JP S6428926 A JPS6428926 A JP S6428926A
Authority
JP
Japan
Prior art keywords
diffusion
diffusion layer
oxygen
silicon oxide
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18588087A
Other languages
Japanese (ja)
Inventor
Mitsukuni Akai
Takeya Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP18588087A priority Critical patent/JPS6428926A/en
Publication of JPS6428926A publication Critical patent/JPS6428926A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To have both a low leakage current value and a stable hFE value by a method wherein a silicon oxide film is formed on the surface of a P-N junction, an oxygen-doped semiinsulating polysilicon film is applied to the surface of a P-type semiconductor region and an N-type semiconductor region excluding the P-N junction and a P<+> diffusion layer or an N<+> diffusion layer is formed at each boundary part between the silicon oxide film and the oxygen- doped semiinsulating polysilicon film. CONSTITUTION:Each P<+> diffusion layer or each N<+> diffusion layer 13 is formed at each boundary part between a silicon oxide film 11 and an oxygen-doped semiinsulating polysilicon film 12. When this diffusion layer 13 is formed, a gate electrode 7 is formed simultaneously by diffusion in the case of P<+> diffusion; on the other hand, a cathode electrode 6 is formed simultaneously by diffusion in the case of N<+> diffusion. By this setup, the individual films 11, 12 display their inherent passivation characteristic; it is possible to obtain a surface passivation effect identical to that in a case where only the oxygen- doped semiinsulating polysilicon film 12 is used as a whole and a low leakage current value identical to a case where only the silicon oxide film 11 is used as a whole.
JP18588087A 1987-07-24 1987-07-24 Semiconductor device Pending JPS6428926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18588087A JPS6428926A (en) 1987-07-24 1987-07-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18588087A JPS6428926A (en) 1987-07-24 1987-07-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6428926A true JPS6428926A (en) 1989-01-31

Family

ID=16178493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18588087A Pending JPS6428926A (en) 1987-07-24 1987-07-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6428926A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670393A (en) * 1995-07-12 1997-09-23 Lsi Logic Corporation Method of making combined metal oxide semiconductor and junction field effect transistor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670393A (en) * 1995-07-12 1997-09-23 Lsi Logic Corporation Method of making combined metal oxide semiconductor and junction field effect transistor device

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