JPS6428926A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6428926A JPS6428926A JP18588087A JP18588087A JPS6428926A JP S6428926 A JPS6428926 A JP S6428926A JP 18588087 A JP18588087 A JP 18588087A JP 18588087 A JP18588087 A JP 18588087A JP S6428926 A JPS6428926 A JP S6428926A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- diffusion layer
- oxygen
- silicon oxide
- case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To have both a low leakage current value and a stable hFE value by a method wherein a silicon oxide film is formed on the surface of a P-N junction, an oxygen-doped semiinsulating polysilicon film is applied to the surface of a P-type semiconductor region and an N-type semiconductor region excluding the P-N junction and a P<+> diffusion layer or an N<+> diffusion layer is formed at each boundary part between the silicon oxide film and the oxygen- doped semiinsulating polysilicon film. CONSTITUTION:Each P<+> diffusion layer or each N<+> diffusion layer 13 is formed at each boundary part between a silicon oxide film 11 and an oxygen-doped semiinsulating polysilicon film 12. When this diffusion layer 13 is formed, a gate electrode 7 is formed simultaneously by diffusion in the case of P<+> diffusion; on the other hand, a cathode electrode 6 is formed simultaneously by diffusion in the case of N<+> diffusion. By this setup, the individual films 11, 12 display their inherent passivation characteristic; it is possible to obtain a surface passivation effect identical to that in a case where only the oxygen- doped semiinsulating polysilicon film 12 is used as a whole and a low leakage current value identical to a case where only the silicon oxide film 11 is used as a whole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18588087A JPS6428926A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18588087A JPS6428926A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6428926A true JPS6428926A (en) | 1989-01-31 |
Family
ID=16178493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18588087A Pending JPS6428926A (en) | 1987-07-24 | 1987-07-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6428926A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670393A (en) * | 1995-07-12 | 1997-09-23 | Lsi Logic Corporation | Method of making combined metal oxide semiconductor and junction field effect transistor device |
-
1987
- 1987-07-24 JP JP18588087A patent/JPS6428926A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670393A (en) * | 1995-07-12 | 1997-09-23 | Lsi Logic Corporation | Method of making combined metal oxide semiconductor and junction field effect transistor device |
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