JPS5615061A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5615061A
JPS5615061A JP9133879A JP9133879A JPS5615061A JP S5615061 A JPS5615061 A JP S5615061A JP 9133879 A JP9133879 A JP 9133879A JP 9133879 A JP9133879 A JP 9133879A JP S5615061 A JPS5615061 A JP S5615061A
Authority
JP
Japan
Prior art keywords
light
memory cell
film
leakage current
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9133879A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Shiragasawa
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9133879A priority Critical patent/JPS5615061A/en
Publication of JPS5615061A publication Critical patent/JPS5615061A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Abstract

PURPOSE:To accurately execute the measurement of the properties of the semiconductor memory in a wafer state by forming an opaque film against a light on the upper surface of a memory cell area to prevent leakage current due to light. CONSTITUTION:An insulating oxide film 6 is selectively formed on the surface of a P-type silicon substrate 5 to selectively form an N-type region forming a memory cell, MOS-FET or the like. After suitably connecting elements therebetween, a surface protective film 8 is formed to protect the surface thereof and insulated the elements therebetween. An opaque thin film layer 7 is selectively formed on the portion located at the region including at least memory cell portion on the film 8. In this manner, it cat shield a light irradiated externally and prevent the increase in the leakage current of a P-N junction due to light.
JP9133879A 1979-07-18 1979-07-18 Semiconductor memory device Pending JPS5615061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9133879A JPS5615061A (en) 1979-07-18 1979-07-18 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9133879A JPS5615061A (en) 1979-07-18 1979-07-18 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5615061A true JPS5615061A (en) 1981-02-13

Family

ID=14023633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9133879A Pending JPS5615061A (en) 1979-07-18 1979-07-18 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5615061A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283160A (en) * 1985-06-10 1986-12-13 Mitsubishi Electric Corp Semiconductor memory device
US5034786A (en) * 1986-08-29 1991-07-23 Waferscale Integration, Inc. Opaque cover for preventing erasure of an EPROM

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283160A (en) * 1985-06-10 1986-12-13 Mitsubishi Electric Corp Semiconductor memory device
US5034786A (en) * 1986-08-29 1991-07-23 Waferscale Integration, Inc. Opaque cover for preventing erasure of an EPROM

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