JPS5642391A - Temperature sensor - Google Patents

Temperature sensor

Info

Publication number
JPS5642391A
JPS5642391A JP11826279A JP11826279A JPS5642391A JP S5642391 A JPS5642391 A JP S5642391A JP 11826279 A JP11826279 A JP 11826279A JP 11826279 A JP11826279 A JP 11826279A JP S5642391 A JPS5642391 A JP S5642391A
Authority
JP
Japan
Prior art keywords
region
junction
temperature sensor
current
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11826279A
Other languages
Japanese (ja)
Inventor
Teruo Sakurai
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11826279A priority Critical patent/JPS5642391A/en
Publication of JPS5642391A publication Critical patent/JPS5642391A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To carry out sensing of temperature with relatively large current value by the temperature sensor by setting a current in reverse direction to match the value which can be most easily measured by setting the crystal defect density of the region in the vicinity of a p-n junction higher than that of the region around the region. CONSTITUTION:A p type region 2 is formed in contact with an n type region n-Si1 in a substrate, and equal p type region p-Si2' and amorphous region 3 are formed thereon. Electrodes as ohmic contacts 5, 5' are formed on the regions n-Si1 and p-Si2'. With the region 2 and p-Si2' are formed in monocrystal the region 3 as monocrystalline region which contains a number of defects. Since the thickness of the region 2 is small when reverse bias voltage is applied to the p-n junction 4, a great deal of leakage current will flow as compared with the case that defects are in small amount so that the current depends upon the temperature of the junction. Thus, the temperature sensor of high sensitivity can be provided.
JP11826279A 1979-09-14 1979-09-14 Temperature sensor Pending JPS5642391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11826279A JPS5642391A (en) 1979-09-14 1979-09-14 Temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11826279A JPS5642391A (en) 1979-09-14 1979-09-14 Temperature sensor

Publications (1)

Publication Number Publication Date
JPS5642391A true JPS5642391A (en) 1981-04-20

Family

ID=14732264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11826279A Pending JPS5642391A (en) 1979-09-14 1979-09-14 Temperature sensor

Country Status (1)

Country Link
JP (1) JPS5642391A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210601A (en) * 1989-10-31 1993-05-11 Kabushiki Kaisha Toshiba Compression contacted semiconductor device and method for making of the same
JP2015079796A (en) * 2013-10-15 2015-04-23 住友電気工業株式会社 Thermoelectric element and method of manufacturing thermoelectric element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210601A (en) * 1989-10-31 1993-05-11 Kabushiki Kaisha Toshiba Compression contacted semiconductor device and method for making of the same
JP2015079796A (en) * 2013-10-15 2015-04-23 住友電気工業株式会社 Thermoelectric element and method of manufacturing thermoelectric element

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