JPS551616A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS551616A
JPS551616A JP7346678A JP7346678A JPS551616A JP S551616 A JPS551616 A JP S551616A JP 7346678 A JP7346678 A JP 7346678A JP 7346678 A JP7346678 A JP 7346678A JP S551616 A JPS551616 A JP S551616A
Authority
JP
Japan
Prior art keywords
semiconductor
heating element
memory
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7346678A
Other languages
Japanese (ja)
Other versions
JPS6047672B2 (en
Inventor
Toshimoto Kodaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP53073466A priority Critical patent/JPS6047672B2/en
Publication of JPS551616A publication Critical patent/JPS551616A/en
Publication of JPS6047672B2 publication Critical patent/JPS6047672B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to perform write as well as rewrite in a high speed and complete a non-volatile read/wtite memory by providing a heating element around an amorphous memory element. CONSTITUTION:P-type diffusion layer 2 is formed in a part of N conductive-type substrate 1. Substrate protecting insulating film 3 is provided on substrate 1, and semiconductor 5 which should become a memory element is formed on film 3 through heating element 8 and Mo electrode 4 for one contact to amorphous semiconductor 5. Further, Mo electrode 6 is formed on conductor 5 as the other contact to semiconductor 5. Then, Al wiring 7 for the connection between a diode and semiconductor 5 as well as a leading-out wiring of cells to the external and electrodes 9 and 10 for heating element 8 are formed. At a memory write time, heating element 8 is caused to be conductive together with semiconductor 5, and the temperature of semiconductor 5 and parts around it rises simultaneously.
JP53073466A 1978-06-16 1978-06-16 semiconductor memory device Expired JPS6047672B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53073466A JPS6047672B2 (en) 1978-06-16 1978-06-16 semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53073466A JPS6047672B2 (en) 1978-06-16 1978-06-16 semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS551616A true JPS551616A (en) 1980-01-08
JPS6047672B2 JPS6047672B2 (en) 1985-10-23

Family

ID=13519060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53073466A Expired JPS6047672B2 (en) 1978-06-16 1978-06-16 semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6047672B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189393A (en) * 1981-05-18 1982-11-20 Seiko Epson Corp Semiconductor storage device
JPS59168665A (en) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Semiconductor memory device and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189393A (en) * 1981-05-18 1982-11-20 Seiko Epson Corp Semiconductor storage device
JPH0127520B2 (en) * 1981-05-18 1989-05-29 Seiko Epson Corp
JPS59168665A (en) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Semiconductor memory device and method of producing same

Also Published As

Publication number Publication date
JPS6047672B2 (en) 1985-10-23

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