JPS5776878A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5776878A JPS5776878A JP15317780A JP15317780A JPS5776878A JP S5776878 A JPS5776878 A JP S5776878A JP 15317780 A JP15317780 A JP 15317780A JP 15317780 A JP15317780 A JP 15317780A JP S5776878 A JPS5776878 A JP S5776878A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- floating gate
- overlaps
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- JOXCDOKKASTCHR-UHFFFAOYSA-N [Si](O)(O)(O)O.[P] Chemical compound [Si](O)(O)(O)O.[P] JOXCDOKKASTCHR-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To write and eliminate electrically easily by a method wherein a control gate electrode faces a semiconductor substrate with a gate insulating film in between. CONSTITUTION:A field insulation film 22 is formed on a p type silicon substrate 21 and a memory element is composed of a gate insulating film 23, a control gate electrode 24 of polycrystalline silicon, an insulating film 25, a floating gate electrode 26 of polycrystalline silicon, an n<+> type source region 27 and an n<+> type drain region 28. Then a phosphorus silicic acid glass film 29 and aluminum electrodes 30, 31 are formed. Above formation is made in such a manner that a part of the floating gate electrode 26 overlaps the control electrode and the rest part of the floating gate electrode 26 overlaps the substrate with an insulating film in between. With above method injection of an electric charge into the floating gate electrode becomes easy, so that electrical writing and eliminating becomes very easy.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15317780A JPS5776878A (en) | 1980-10-31 | 1980-10-31 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15317780A JPS5776878A (en) | 1980-10-31 | 1980-10-31 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776878A true JPS5776878A (en) | 1982-05-14 |
Family
ID=15556728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15317780A Pending JPS5776878A (en) | 1980-10-31 | 1980-10-31 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776878A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60263470A (en) * | 1984-06-12 | 1985-12-26 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor nonvolatile memory |
FR2572211A1 (en) * | 1984-10-23 | 1986-04-25 | Sgs Microelettronica Spa | PERMANENT MEMORY CELL OF THE "MERGED" TYPE (FUSIONED) WITH A FLOATING GRID SUPERMITTED TO THE CONTROL AND SELECTION GRID |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
US5021847A (en) * | 1984-05-15 | 1991-06-04 | Waferscale Integration, Inc. | Split gate memory array having staggered floating gate rows and method for making same |
US5101250A (en) * | 1988-06-28 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Electrically programmable non-volatile memory device and manufacturing method thereof |
US5939749A (en) * | 1996-03-29 | 1999-08-17 | Sanyo Electric Company, Ltd. | Split gate transistor array |
-
1980
- 1980-10-31 JP JP15317780A patent/JPS5776878A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
US5021847A (en) * | 1984-05-15 | 1991-06-04 | Waferscale Integration, Inc. | Split gate memory array having staggered floating gate rows and method for making same |
JPS60263470A (en) * | 1984-06-12 | 1985-12-26 | Seiko Instr & Electronics Ltd | Manufacture of semiconductor nonvolatile memory |
FR2572211A1 (en) * | 1984-10-23 | 1986-04-25 | Sgs Microelettronica Spa | PERMANENT MEMORY CELL OF THE "MERGED" TYPE (FUSIONED) WITH A FLOATING GRID SUPERMITTED TO THE CONTROL AND SELECTION GRID |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
US5101250A (en) * | 1988-06-28 | 1992-03-31 | Mitsubishi Denki Kabushiki Kaisha | Electrically programmable non-volatile memory device and manufacturing method thereof |
US5939749A (en) * | 1996-03-29 | 1999-08-17 | Sanyo Electric Company, Ltd. | Split gate transistor array |
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