JPS5793577A - Insulated gate type transistor - Google Patents

Insulated gate type transistor

Info

Publication number
JPS5793577A
JPS5793577A JP55171189A JP17118980A JPS5793577A JP S5793577 A JPS5793577 A JP S5793577A JP 55171189 A JP55171189 A JP 55171189A JP 17118980 A JP17118980 A JP 17118980A JP S5793577 A JPS5793577 A JP S5793577A
Authority
JP
Japan
Prior art keywords
gate
drain
charge
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55171189A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Junichi Mihashi
Nobufumi Komori
Satoru Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55171189A priority Critical patent/JPS5793577A/en
Publication of JPS5793577A publication Critical patent/JPS5793577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enable the direct injection of charge from the second gate to the first gate by providing means for forming an insulated gate type field effect transistor of double structure between the first gate and the second gate. CONSTITUTION:Different conductive type source 2 from a silicon substrate 1, drain 3 and the first gate insulator 4 formed of silicon oxidized film and the first gate electrode 5 are formed by a method of manufacturing an ordinary MIS transistor, a thin insulatng film 6 the second gate electrode 7 are formed thereon, an oxidized film having a thickness less then 100Angstrom is formed by thermal oxidization or natural oxidization on the upper surface of the first gate 5 of polysilicon or the like, and the second gate 7 is superposed thereon. When approx. 5V is applied to the gate 7, the charge is moved due to tunnel effect to the first gate, and a current between the source 2 and the drain 3 can be controlled due to the potential.
JP55171189A 1980-12-03 1980-12-03 Insulated gate type transistor Pending JPS5793577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171189A JPS5793577A (en) 1980-12-03 1980-12-03 Insulated gate type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171189A JPS5793577A (en) 1980-12-03 1980-12-03 Insulated gate type transistor

Publications (1)

Publication Number Publication Date
JPS5793577A true JPS5793577A (en) 1982-06-10

Family

ID=15918648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171189A Pending JPS5793577A (en) 1980-12-03 1980-12-03 Insulated gate type transistor

Country Status (1)

Country Link
JP (1) JPS5793577A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308072B1 (en) * 1998-08-27 2001-10-19 박종섭 Manufacturing method of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916388A (en) * 1972-05-22 1974-02-13
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS53148286A (en) * 1977-05-26 1978-12-23 Itt Semiconductor memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916388A (en) * 1972-05-22 1974-02-13
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device
JPS53148286A (en) * 1977-05-26 1978-12-23 Itt Semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100308072B1 (en) * 1998-08-27 2001-10-19 박종섭 Manufacturing method of semiconductor device

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