JPS5331977A - Production of insulated gate type field effect transistors - Google Patents

Production of insulated gate type field effect transistors

Info

Publication number
JPS5331977A
JPS5331977A JP10640576A JP10640576A JPS5331977A JP S5331977 A JPS5331977 A JP S5331977A JP 10640576 A JP10640576 A JP 10640576A JP 10640576 A JP10640576 A JP 10640576A JP S5331977 A JPS5331977 A JP S5331977A
Authority
JP
Japan
Prior art keywords
gate
production
field effect
type field
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10640576A
Other languages
Japanese (ja)
Other versions
JPS5940307B2 (en
Inventor
Tadaharu Tsuyuki
Katsuhiko Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10640576A priority Critical patent/JPS5940307B2/en
Publication of JPS5331977A publication Critical patent/JPS5331977A/en
Publication of JPS5940307B2 publication Critical patent/JPS5940307B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To avoid direct contact of a semi-insulation type polycrystalline Si film to a Si substrate, eliminate the change in the surface charge density at gate parts and avert the variation of threshold voltage by providing the process of forming a gate insualtion layer and gate conductive layer thereafer forming a semiinsulation type polycrystalline Si film, opening windows here and providing electrodes making contact to gate, source, drain regions.
COPYRIGHT: (C)1978,JPO&Japio
JP10640576A 1976-09-06 1976-09-06 Manufacturing method of insulated gate field effect transistor Expired JPS5940307B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10640576A JPS5940307B2 (en) 1976-09-06 1976-09-06 Manufacturing method of insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10640576A JPS5940307B2 (en) 1976-09-06 1976-09-06 Manufacturing method of insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS5331977A true JPS5331977A (en) 1978-03-25
JPS5940307B2 JPS5940307B2 (en) 1984-09-29

Family

ID=14432760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10640576A Expired JPS5940307B2 (en) 1976-09-06 1976-09-06 Manufacturing method of insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5940307B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643457A (en) * 1979-09-18 1981-04-22 Japan Vilene Co Ltd Production of nonwoven fabric molded article
JPS63196751A (en) * 1987-02-05 1988-08-15 帝人株式会社 Polyester binder fiber for nonwoven fabric

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233801A (en) * 1985-08-05 1987-02-13 日交化工材株式会社 Method for holding article worn to body
JPS6451604U (en) * 1987-09-24 1989-03-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643457A (en) * 1979-09-18 1981-04-22 Japan Vilene Co Ltd Production of nonwoven fabric molded article
JPS63542B2 (en) * 1979-09-18 1988-01-07 Japan Vilene Co Ltd
JPS63196751A (en) * 1987-02-05 1988-08-15 帝人株式会社 Polyester binder fiber for nonwoven fabric

Also Published As

Publication number Publication date
JPS5940307B2 (en) 1984-09-29

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