JPS5331977A - Production of insulated gate type field effect transistors - Google Patents
Production of insulated gate type field effect transistorsInfo
- Publication number
- JPS5331977A JPS5331977A JP10640576A JP10640576A JPS5331977A JP S5331977 A JPS5331977 A JP S5331977A JP 10640576 A JP10640576 A JP 10640576A JP 10640576 A JP10640576 A JP 10640576A JP S5331977 A JPS5331977 A JP S5331977A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- production
- field effect
- type field
- effect transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To avoid direct contact of a semi-insulation type polycrystalline Si film to a Si substrate, eliminate the change in the surface charge density at gate parts and avert the variation of threshold voltage by providing the process of forming a gate insualtion layer and gate conductive layer thereafer forming a semiinsulation type polycrystalline Si film, opening windows here and providing electrodes making contact to gate, source, drain regions.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10640576A JPS5940307B2 (en) | 1976-09-06 | 1976-09-06 | Manufacturing method of insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10640576A JPS5940307B2 (en) | 1976-09-06 | 1976-09-06 | Manufacturing method of insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5331977A true JPS5331977A (en) | 1978-03-25 |
JPS5940307B2 JPS5940307B2 (en) | 1984-09-29 |
Family
ID=14432760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10640576A Expired JPS5940307B2 (en) | 1976-09-06 | 1976-09-06 | Manufacturing method of insulated gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5940307B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643457A (en) * | 1979-09-18 | 1981-04-22 | Japan Vilene Co Ltd | Production of nonwoven fabric molded article |
JPS63196751A (en) * | 1987-02-05 | 1988-08-15 | 帝人株式会社 | Polyester binder fiber for nonwoven fabric |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6233801A (en) * | 1985-08-05 | 1987-02-13 | 日交化工材株式会社 | Method for holding article worn to body |
JPS6451604U (en) * | 1987-09-24 | 1989-03-30 |
-
1976
- 1976-09-06 JP JP10640576A patent/JPS5940307B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5643457A (en) * | 1979-09-18 | 1981-04-22 | Japan Vilene Co Ltd | Production of nonwoven fabric molded article |
JPS63542B2 (en) * | 1979-09-18 | 1988-01-07 | Japan Vilene Co Ltd | |
JPS63196751A (en) * | 1987-02-05 | 1988-08-15 | 帝人株式会社 | Polyester binder fiber for nonwoven fabric |
Also Published As
Publication number | Publication date |
---|---|
JPS5940307B2 (en) | 1984-09-29 |
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