JPS53142189A - Insulating gate type field effect transistor - Google Patents
Insulating gate type field effect transistorInfo
- Publication number
- JPS53142189A JPS53142189A JP5731377A JP5731377A JPS53142189A JP S53142189 A JPS53142189 A JP S53142189A JP 5731377 A JP5731377 A JP 5731377A JP 5731377 A JP5731377 A JP 5731377A JP S53142189 A JPS53142189 A JP S53142189A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- gate type
- insulating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To increase the current capacity and thus to obtain large output by forming the channel netlike in the vertical direction to the Si substrate surface with vertical formation of IGFET and then flowing the current to the direction vertical to the substrate surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5731377A JPS53142189A (en) | 1977-05-17 | 1977-05-17 | Insulating gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5731377A JPS53142189A (en) | 1977-05-17 | 1977-05-17 | Insulating gate type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53142189A true JPS53142189A (en) | 1978-12-11 |
JPS624865B2 JPS624865B2 (en) | 1987-02-02 |
Family
ID=13052066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5731377A Granted JPS53142189A (en) | 1977-05-17 | 1977-05-17 | Insulating gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53142189A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756975A (en) * | 1980-05-29 | 1982-04-05 | Gen Instrument Corp | V-mos field effect semiconductor device and method of producing same |
JPS57128966A (en) * | 1981-02-02 | 1982-08-10 | Seiko Epson Corp | Mis type semiconductor device |
JPS5858771A (en) * | 1981-09-14 | 1983-04-07 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Insulated gate field effect transistor and method of producing same |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
US4757361A (en) * | 1986-07-23 | 1988-07-12 | International Business Machines Corporation | Amorphous thin film transistor device |
JPS63296282A (en) * | 1987-05-27 | 1988-12-02 | Sony Corp | Semiconductor device |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
US5115287A (en) * | 1986-11-19 | 1992-05-19 | Research Development Corporation Of Japan | Step-cut insulated gate static induction transistors and method of manufacturing the same |
US6916712B2 (en) | 1999-03-01 | 2005-07-12 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
-
1977
- 1977-05-17 JP JP5731377A patent/JPS53142189A/en active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5756975A (en) * | 1980-05-29 | 1982-04-05 | Gen Instrument Corp | V-mos field effect semiconductor device and method of producing same |
JPS57128966A (en) * | 1981-02-02 | 1982-08-10 | Seiko Epson Corp | Mis type semiconductor device |
JPS5858771A (en) * | 1981-09-14 | 1983-04-07 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Insulated gate field effect transistor and method of producing same |
JPH058586B2 (en) * | 1981-09-14 | 1993-02-02 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
US4757361A (en) * | 1986-07-23 | 1988-07-12 | International Business Machines Corporation | Amorphous thin film transistor device |
US5115287A (en) * | 1986-11-19 | 1992-05-19 | Research Development Corporation Of Japan | Step-cut insulated gate static induction transistors and method of manufacturing the same |
JPS63296282A (en) * | 1987-05-27 | 1988-12-02 | Sony Corp | Semiconductor device |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
US6916712B2 (en) | 1999-03-01 | 2005-07-12 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
US7388254B2 (en) | 1999-03-01 | 2008-06-17 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
Also Published As
Publication number | Publication date |
---|---|
JPS624865B2 (en) | 1987-02-02 |
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