GB2016803A - Thin film transistor construction and manufacturing method of the same - Google Patents

Thin film transistor construction and manufacturing method of the same

Info

Publication number
GB2016803A
GB2016803A GB7902390A GB7902390A GB2016803A GB 2016803 A GB2016803 A GB 2016803A GB 7902390 A GB7902390 A GB 7902390A GB 7902390 A GB7902390 A GB 7902390A GB 2016803 A GB2016803 A GB 2016803A
Authority
GB
United Kingdom
Prior art keywords
thin film
film transistor
source
drain electrodes
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7902390A
Other versions
GB2016803B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB2016803A publication Critical patent/GB2016803A/en
Application granted granted Critical
Publication of GB2016803B publication Critical patent/GB2016803B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

A thin film transistor comprises a substrate 13, a gate electrode 14, an insulating oxide film 15, a source and drain electrodes 16, 17 thereon spaced from each other, and a layer of a semiconductor material formed on the source and drain electrodes and the insulating oxide film to electrically connect the source and drain electrodes. The layer of the semiconductor material is provided as the last step in manufacture after formation of the gate, source, and drain electrodes. The insulating oxide film may be made by superficial anodic oxidation of the gate electrode. <IMAGE>
GB7902390A 1978-01-23 1979-01-23 Thin film transistor construction and manufacturing methodof same Expired GB2016803B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP659578A JPS5499576A (en) 1978-01-23 1978-01-23 Thin-film transistor and its manufacture

Publications (2)

Publication Number Publication Date
GB2016803A true GB2016803A (en) 1979-09-26
GB2016803B GB2016803B (en) 1982-08-18

Family

ID=11642676

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7902390A Expired GB2016803B (en) 1978-01-23 1979-01-23 Thin film transistor construction and manufacturing methodof same

Country Status (3)

Country Link
JP (1) JPS5499576A (en)
DE (1) DE2902303A1 (en)
GB (1) GB2016803B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor
JPS5731179A (en) * 1980-07-31 1982-02-19 Sharp Corp Formation of thin-film transistor
JPS5799774A (en) * 1980-11-19 1982-06-21 Sharp Corp Forming method for thin-film transistor
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
JPS5874079A (en) * 1981-10-28 1983-05-04 Japan Electronic Ind Dev Assoc<Jeida> Thin film transistor
JPS59124162A (en) * 1982-12-29 1984-07-18 Sharp Corp Thin film transistor
JPS6045219A (en) * 1983-08-23 1985-03-11 Toshiba Corp Active matrix type display device
GB8406330D0 (en) * 1984-03-10 1984-04-11 Lucas Ind Plc Amorphous silicon field effect transistors
JPH0628317B2 (en) * 1985-05-23 1994-04-13 松下電器産業株式会社 Method of manufacturing thin film transistor
JPH0521798A (en) * 1991-02-18 1993-01-29 Alps Electric Co Ltd Thin-film transistor

Also Published As

Publication number Publication date
GB2016803B (en) 1982-08-18
JPS5499576A (en) 1979-08-06
DE2902303A1 (en) 1979-07-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19980123