JPS5669864A - Thin-film transistor - Google Patents

Thin-film transistor

Info

Publication number
JPS5669864A
JPS5669864A JP14576179A JP14576179A JPS5669864A JP S5669864 A JPS5669864 A JP S5669864A JP 14576179 A JP14576179 A JP 14576179A JP 14576179 A JP14576179 A JP 14576179A JP S5669864 A JPS5669864 A JP S5669864A
Authority
JP
Japan
Prior art keywords
thin
anode
film
insulating film
oxidized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14576179A
Other languages
Japanese (ja)
Inventor
Hirosaku Nonomura
Yutaka Takato
Sadatoshi Takechi
Hisashi Kamiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Sharp Corp filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP14576179A priority Critical patent/JPS5669864A/en
Priority to DE19803042021 priority patent/DE3042021A1/en
Priority to GB8035859A priority patent/GB2065368B/en
Publication of JPS5669864A publication Critical patent/JPS5669864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve the dielectric pressure resistance of a gate insulating film and enhance reliability by a method wherein a surface of a gate electrode in Ta is anode- oxidized, and a Te thin-film is formed, and contacted with source and drain electrodes.
CONSTITUTION: A gate electrode 26 in Ta is made up on a glass plate 25, the surface is anode-oxidized to form an insulating film 27, a Te layer 28 is stacked, and a source electrode 29 in Ni and a drain electrode 30 are built up. An anode oxidation method can form an insulating thin-film, pin-holes thereof are fewer than other methods. Judgement from a formation method also shows that the application of voltage in the positive direction to Ta 26 anode oxidation-treated results in an excellent insulating characteristic. According to this constitution, the generation of defects due to the dielectric breakdown of a gate insulating film is remarkably decreased, and the reliability of an FET is sharply improved.
COPYRIGHT: (C)1981,JPO&Japio
JP14576179A 1979-11-09 1979-11-09 Thin-film transistor Pending JPS5669864A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP14576179A JPS5669864A (en) 1979-11-09 1979-11-09 Thin-film transistor
DE19803042021 DE3042021A1 (en) 1979-11-09 1980-11-07 THIN FILM TRANSISTORS
GB8035859A GB2065368B (en) 1979-11-09 1980-11-07 Thin film transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14576179A JPS5669864A (en) 1979-11-09 1979-11-09 Thin-film transistor

Publications (1)

Publication Number Publication Date
JPS5669864A true JPS5669864A (en) 1981-06-11

Family

ID=15392542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14576179A Pending JPS5669864A (en) 1979-11-09 1979-11-09 Thin-film transistor

Country Status (3)

Country Link
JP (1) JPS5669864A (en)
DE (1) DE3042021A1 (en)
GB (1) GB2065368B (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5874079A (en) * 1981-10-28 1983-05-04 Japan Electronic Ind Dev Assoc<Jeida> Thin film transistor
JPS58116573A (en) * 1981-12-29 1983-07-11 セイコーエプソン株式会社 Manufacture of matrix display
JPS58190063A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Thin film transistor for transmission type liquid crystal display panel
JPS5954267A (en) * 1982-09-21 1984-03-29 Seiko Epson Corp Semiconductor device
JPS5975668A (en) * 1982-10-25 1984-04-28 Oki Electric Ind Co Ltd Manufacture of thin film transistor
JPS5991756U (en) * 1982-12-13 1984-06-21 三洋電機株式会社 lcd matrix panel
JPS59141271A (en) * 1983-01-31 1984-08-13 Sharp Corp Thin-film transistor
JPS6272167A (en) * 1985-08-02 1987-04-02 ゼネラル・エレクトリツク・カンパニイ Depositing and curing method for gate electrode material forthin film field effect transistor
JPS6312173A (en) * 1986-07-03 1988-01-19 Tokyo Noukou Univ Field effect transistor with insulating gate
JPH07147416A (en) * 1994-08-10 1995-06-06 Sanyo Electric Co Ltd Manufacture of liquid crystal matrix panel
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100461A (en) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> Manufacture of thin-film transistor
IT1306182B1 (en) * 1999-08-02 2001-05-30 Shine Spa PROCEDURE FOR THE SELECTIVE ANODIZATION IN TWO PHASES OF A SEMICONDUCTIVE STRATOD FOR THE FORMATION OF POROUS SILICON.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499576A (en) * 1978-01-23 1979-08-06 Sharp Corp Thin-film transistor and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499576A (en) * 1978-01-23 1979-08-06 Sharp Corp Thin-film transistor and its manufacture

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5874079A (en) * 1981-10-28 1983-05-04 Japan Electronic Ind Dev Assoc<Jeida> Thin film transistor
JPS58116573A (en) * 1981-12-29 1983-07-11 セイコーエプソン株式会社 Manufacture of matrix display
JPS6112268B2 (en) * 1981-12-29 1986-04-07 Suwa Seikosha Kk
JPS58190063A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Thin film transistor for transmission type liquid crystal display panel
JPS5954267A (en) * 1982-09-21 1984-03-29 Seiko Epson Corp Semiconductor device
JPH0542816B2 (en) * 1982-09-21 1993-06-29 Seiko Epson Corp
JPS5975668A (en) * 1982-10-25 1984-04-28 Oki Electric Ind Co Ltd Manufacture of thin film transistor
JPH0514521Y2 (en) * 1982-12-13 1993-04-19
JPS5991756U (en) * 1982-12-13 1984-06-21 三洋電機株式会社 lcd matrix panel
JPH0582069B2 (en) * 1983-01-31 1993-11-17 Sharp Kk
JPS59141271A (en) * 1983-01-31 1984-08-13 Sharp Corp Thin-film transistor
JPS6272167A (en) * 1985-08-02 1987-04-02 ゼネラル・エレクトリツク・カンパニイ Depositing and curing method for gate electrode material forthin film field effect transistor
JPS6312173A (en) * 1986-07-03 1988-01-19 Tokyo Noukou Univ Field effect transistor with insulating gate
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH07147416A (en) * 1994-08-10 1995-06-06 Sanyo Electric Co Ltd Manufacture of liquid crystal matrix panel
JP2538523B2 (en) * 1994-08-10 1996-09-25 三洋電機株式会社 Liquid crystal matrix panel manufacturing method

Also Published As

Publication number Publication date
DE3042021A1 (en) 1981-05-27
GB2065368B (en) 1984-09-12
GB2065368A (en) 1981-06-24

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