GB2065368B - Thin film transistors - Google Patents

Thin film transistors

Info

Publication number
GB2065368B
GB2065368B GB8035859A GB8035859A GB2065368B GB 2065368 B GB2065368 B GB 2065368B GB 8035859 A GB8035859 A GB 8035859A GB 8035859 A GB8035859 A GB 8035859A GB 2065368 B GB2065368 B GB 2065368B
Authority
GB
United Kingdom
Prior art keywords
thin film
film transistors
transistors
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8035859A
Other versions
GB2065368A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Electronic Industry Development Association
Sharp Corp
Original Assignee
Japan Electronic Industry Development Association
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Electronic Industry Development Association, Sharp Corp filed Critical Japan Electronic Industry Development Association
Publication of GB2065368A publication Critical patent/GB2065368A/en
Application granted granted Critical
Publication of GB2065368B publication Critical patent/GB2065368B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
GB8035859A 1979-11-09 1980-11-07 Thin film transistors Expired GB2065368B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14576179A JPS5669864A (en) 1979-11-09 1979-11-09 Thin-film transistor

Publications (2)

Publication Number Publication Date
GB2065368A GB2065368A (en) 1981-06-24
GB2065368B true GB2065368B (en) 1984-09-12

Family

ID=15392542

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8035859A Expired GB2065368B (en) 1979-11-09 1980-11-07 Thin film transistors

Country Status (3)

Country Link
JP (1) JPS5669864A (en)
DE (1) DE3042021A1 (en)
GB (1) GB2065368B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5874079A (en) * 1981-10-28 1983-05-04 Japan Electronic Ind Dev Assoc<Jeida> Thin film transistor
JPS58100461A (en) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> Manufacture of thin-film transistor
JPS58116573A (en) * 1981-12-29 1983-07-11 セイコーエプソン株式会社 Manufacture of matrix display
JPS59141271A (en) * 1983-01-31 1984-08-13 Sharp Corp Thin-film transistor
JPS58190063A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Thin film transistor for transmission type liquid crystal display panel
JPS5954267A (en) * 1982-09-21 1984-03-29 Seiko Epson Corp Semiconductor device
JPS5975668A (en) * 1982-10-25 1984-04-28 Oki Electric Ind Co Ltd Manufacture of thin film transistor
JPS5991756U (en) * 1982-12-13 1984-06-21 三洋電機株式会社 lcd matrix panel
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
JPS6312173A (en) * 1986-07-03 1988-01-19 Tokyo Noukou Univ Field effect transistor with insulating gate
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2538523B2 (en) * 1994-08-10 1996-09-25 三洋電機株式会社 Liquid crystal matrix panel manufacturing method
IT1306182B1 (en) * 1999-08-02 2001-05-30 Shine Spa PROCEDURE FOR THE SELECTIVE ANODIZATION IN TWO PHASES OF A SEMICONDUCTIVE STRATOD FOR THE FORMATION OF POROUS SILICON.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499576A (en) * 1978-01-23 1979-08-06 Sharp Corp Thin-film transistor and its manufacture

Also Published As

Publication number Publication date
GB2065368A (en) 1981-06-24
DE3042021A1 (en) 1981-05-27
JPS5669864A (en) 1981-06-11

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20001106