JPS5499576A - Thin-film transistor and its manufacture - Google Patents

Thin-film transistor and its manufacture

Info

Publication number
JPS5499576A
JPS5499576A JP659578A JP659578A JPS5499576A JP S5499576 A JPS5499576 A JP S5499576A JP 659578 A JP659578 A JP 659578A JP 659578 A JP659578 A JP 659578A JP S5499576 A JPS5499576 A JP S5499576A
Authority
JP
Japan
Prior art keywords
film
thin
film transistor
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP659578A
Other languages
Japanese (ja)
Inventor
Kohei Kishi
Hirosaku Nonomura
Keiichiro Shimizu
Hisashi Kamiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP659578A priority Critical patent/JPS5499576A/en
Priority to DE19792902303 priority patent/DE2902303A1/en
Priority to GB7902390A priority patent/GB2016803B/en
Publication of JPS5499576A publication Critical patent/JPS5499576A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Abstract

PURPOSE: To obtain a thin-film transistor which excels in both electric and physical properties by forming the gate electrode of Al or the like on the insulating substrate, converting the surface layer into the insulating metal layer and forming the source- drain electrodes of Au or the like on the metal layer and extending onto the substrate along with the semiconductor layer of CdSe or the like formed between those electrodes.
CONSTITUTION: The metal such as Al, Ta or the like is evaporated on insulating substrate 13 made of glass, ceramics, quartz and others to form gate electrode 14. Then the surface layer is converted to insulating oxide metal film 15 of Al2O3, Ta2O5 or the like through the anode oxidation. After this, source and drain electrodes 16 and 17 of Au, Co, Ni, Al or the like are coated on the entire surface in order to secure a good contact with semiconductor layer 18 to be provided later, and semiconductor layer 18 made of CdSe, CdS, Te, PbS or the like and extends onto electrode 16 and 17 is evaporated with a contact to film 15 after drilling an opening on film 15. Thus, a thin-film transistor is obtained. In such way, the manufacture can be facilitated, at the same time eliminating occurrence of the damage or contamination.
COPYRIGHT: (C)1979,JPO&Japio
JP659578A 1978-01-23 1978-01-23 Thin-film transistor and its manufacture Pending JPS5499576A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP659578A JPS5499576A (en) 1978-01-23 1978-01-23 Thin-film transistor and its manufacture
DE19792902303 DE2902303A1 (en) 1978-01-23 1979-01-22 THIN FILM TRANSISTOR AND METHOD OF ITS MANUFACTURING
GB7902390A GB2016803B (en) 1978-01-23 1979-01-23 Thin film transistor construction and manufacturing methodof same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP659578A JPS5499576A (en) 1978-01-23 1978-01-23 Thin-film transistor and its manufacture

Publications (1)

Publication Number Publication Date
JPS5499576A true JPS5499576A (en) 1979-08-06

Family

ID=11642676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP659578A Pending JPS5499576A (en) 1978-01-23 1978-01-23 Thin-film transistor and its manufacture

Country Status (3)

Country Link
JP (1) JPS5499576A (en)
DE (1) DE2902303A1 (en)
GB (1) GB2016803B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor
JPS5799774A (en) * 1980-11-19 1982-06-21 Sharp Corp Forming method for thin-film transistor
JPS61268066A (en) * 1985-05-23 1986-11-27 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor
JPH0521798A (en) * 1991-02-18 1993-01-29 Alps Electric Co Ltd Thin-film transistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731179A (en) * 1980-07-31 1982-02-19 Sharp Corp Formation of thin-film transistor
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
JPS5874079A (en) * 1981-10-28 1983-05-04 Japan Electronic Ind Dev Assoc<Jeida> Thin film transistor
JPS59124162A (en) * 1982-12-29 1984-07-18 Sharp Corp Thin film transistor
JPS6045219A (en) * 1983-08-23 1985-03-11 Toshiba Corp Active matrix type display device
GB8406330D0 (en) * 1984-03-10 1984-04-11 Lucas Ind Plc Amorphous silicon field effect transistors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor
JPS5799774A (en) * 1980-11-19 1982-06-21 Sharp Corp Forming method for thin-film transistor
JPS61268066A (en) * 1985-05-23 1986-11-27 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor
JPH0628317B2 (en) * 1985-05-23 1994-04-13 松下電器産業株式会社 Method of manufacturing thin film transistor
JPH0521798A (en) * 1991-02-18 1993-01-29 Alps Electric Co Ltd Thin-film transistor

Also Published As

Publication number Publication date
GB2016803A (en) 1979-09-26
DE2902303A1 (en) 1979-07-26
GB2016803B (en) 1982-08-18

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