JPS5587479A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS5587479A JPS5587479A JP16088578A JP16088578A JPS5587479A JP S5587479 A JPS5587479 A JP S5587479A JP 16088578 A JP16088578 A JP 16088578A JP 16088578 A JP16088578 A JP 16088578A JP S5587479 A JPS5587479 A JP S5587479A
- Authority
- JP
- Japan
- Prior art keywords
- source
- film
- drain layers
- layer
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain an IGFET which allows direct connection of the gate electrode to the source and drain layers while employing a self-aligning metal electrode.
CONSTITUTION: A fixed oxide film 32, a gate oxide film 33 and an Mo-layer 34 are formed on an Si substrate 31. Source and drain layers 35 are provided opened on the film 33. Then, a poly Si 36 is formed on the substrate and with an aid of an Si3N4 mask 37, an oxide section 38 is selectively provided. After the removal of the mask, an SiO2 film 39 is laminated and an Al wire layer is provided in a window selectively made. In such a manner, the direct connection between the Mo gate electrode 34 and the source and drain layers 35 can be materialized by selectively oxidizing a new poly Si-layer 36. Masks required for the method are sufficiently covered in number by those used in production of ordinary Si gate FETs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16088578A JPS5587479A (en) | 1978-12-25 | 1978-12-25 | Insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16088578A JPS5587479A (en) | 1978-12-25 | 1978-12-25 | Insulated gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5587479A true JPS5587479A (en) | 1980-07-02 |
Family
ID=15724462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16088578A Pending JPS5587479A (en) | 1978-12-25 | 1978-12-25 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587479A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61216447A (en) * | 1985-03-22 | 1986-09-26 | Fujitsu Ltd | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110288A (en) * | 1975-03-24 | 1976-09-29 | Nippon Electric Co | mis gatahandotaisochino seizohoho |
-
1978
- 1978-12-25 JP JP16088578A patent/JPS5587479A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51110288A (en) * | 1975-03-24 | 1976-09-29 | Nippon Electric Co | mis gatahandotaisochino seizohoho |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61216447A (en) * | 1985-03-22 | 1986-09-26 | Fujitsu Ltd | Manufacture of semiconductor device |
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