JPS5587479A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5587479A
JPS5587479A JP16088578A JP16088578A JPS5587479A JP S5587479 A JPS5587479 A JP S5587479A JP 16088578 A JP16088578 A JP 16088578A JP 16088578 A JP16088578 A JP 16088578A JP S5587479 A JPS5587479 A JP S5587479A
Authority
JP
Japan
Prior art keywords
source
film
drain layers
layer
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16088578A
Other languages
Japanese (ja)
Inventor
Takashi Tomizawa
Koji Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16088578A priority Critical patent/JPS5587479A/en
Publication of JPS5587479A publication Critical patent/JPS5587479A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain an IGFET which allows direct connection of the gate electrode to the source and drain layers while employing a self-aligning metal electrode.
CONSTITUTION: A fixed oxide film 32, a gate oxide film 33 and an Mo-layer 34 are formed on an Si substrate 31. Source and drain layers 35 are provided opened on the film 33. Then, a poly Si 36 is formed on the substrate and with an aid of an Si3N4 mask 37, an oxide section 38 is selectively provided. After the removal of the mask, an SiO2 film 39 is laminated and an Al wire layer is provided in a window selectively made. In such a manner, the direct connection between the Mo gate electrode 34 and the source and drain layers 35 can be materialized by selectively oxidizing a new poly Si-layer 36. Masks required for the method are sufficiently covered in number by those used in production of ordinary Si gate FETs.
COPYRIGHT: (C)1980,JPO&Japio
JP16088578A 1978-12-25 1978-12-25 Insulated gate type field effect transistor Pending JPS5587479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16088578A JPS5587479A (en) 1978-12-25 1978-12-25 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16088578A JPS5587479A (en) 1978-12-25 1978-12-25 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5587479A true JPS5587479A (en) 1980-07-02

Family

ID=15724462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16088578A Pending JPS5587479A (en) 1978-12-25 1978-12-25 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5587479A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216447A (en) * 1985-03-22 1986-09-26 Fujitsu Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110288A (en) * 1975-03-24 1976-09-29 Nippon Electric Co mis gatahandotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51110288A (en) * 1975-03-24 1976-09-29 Nippon Electric Co mis gatahandotaisochino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216447A (en) * 1985-03-22 1986-09-26 Fujitsu Ltd Manufacture of semiconductor device

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