JPS5552264A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5552264A JPS5552264A JP12490078A JP12490078A JPS5552264A JP S5552264 A JPS5552264 A JP S5552264A JP 12490078 A JP12490078 A JP 12490078A JP 12490078 A JP12490078 A JP 12490078A JP S5552264 A JPS5552264 A JP S5552264A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidation
- gate
- protection film
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain MOSIC with reduced number of masking operations, by oxidizing the surface of a pattern made of Si or the like after the pattern is formed on a gate oxidation film through an oxidation protection film, and by removing except on a side wall and covering Si or the like, thereby lifting off at the side wall.
CONSTITUTION: A channel dope 11 is formed after an oxidation protection film 10 such as Si3N4 is formed on a field oxidation film 8 and a gate oxidation film 9. Next, a pattern consisting of Si or a metal silicide 12 and an oxidation protection film 13, is formed. After the surface of the pattern is oxidized and a SiO2 layer 14 is formed, ions are supplied to form a source-drain diffusion areas 15. Next, the oxidation protection film 13, the gate oxidation film except for the channel section, the Si or silicide layer 12, and the oxidation protection film 10 are removed in this order, thereby forming a wall made by SiO2, then a film 16 for wiring is covered which is formed into a gate wiring and a source-drain wiring by lifting off the SiO2 wall 14. Finally, an ion supplid layer 17 is formed to obtain a gate selfaligned MOSIC.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12490078A JPS5552264A (en) | 1978-10-11 | 1978-10-11 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12490078A JPS5552264A (en) | 1978-10-11 | 1978-10-11 | Manufacturing of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5552264A true JPS5552264A (en) | 1980-04-16 |
Family
ID=14896878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12490078A Pending JPS5552264A (en) | 1978-10-11 | 1978-10-11 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5552264A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904508A (en) * | 1994-09-27 | 1999-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52141578A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of mos-type semiconductor device |
| JPS5368071A (en) * | 1976-11-30 | 1978-06-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of producing semiconductor |
-
1978
- 1978-10-11 JP JP12490078A patent/JPS5552264A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52141578A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of mos-type semiconductor device |
| JPS5368071A (en) * | 1976-11-30 | 1978-06-17 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of producing semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904508A (en) * | 1994-09-27 | 1999-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
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