JPS5633826A - Manufacture of target - Google Patents
Manufacture of targetInfo
- Publication number
- JPS5633826A JPS5633826A JP10914179A JP10914179A JPS5633826A JP S5633826 A JPS5633826 A JP S5633826A JP 10914179 A JP10914179 A JP 10914179A JP 10914179 A JP10914179 A JP 10914179A JP S5633826 A JPS5633826 A JP S5633826A
- Authority
- JP
- Japan
- Prior art keywords
- target
- photo resist
- resist film
- etching
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
PURPOSE:To prevent damage to a substrate by additionally covering the parts except the target forming region with a separate photo resist film wherein the above process is done when etching formation is made to the target pattern on a semiconductor substrate by consisting a photo resist as a mask. CONSTITUTION:When the target is made by utilizing photo etching process for isolation diffusion, an oxide film 8 is formed on the silicon substrate 7 and the oxide film 8 is furthermore covered with the first photo resist film 9. Next, a desired pattern is formed by partially exposing the photo resist film 9 and a window 10 for isolation and windows 11 for target are formed by consisting the photo resist film 9 as a mask and by etching the oxide film 8. After that, the surface of the first photo resist film 9 except the region which becomes a target is covered with the second photo resist film 12 and a target pattern 13 is formed on the silicon substrate 7 by etching treatment. In this way, damage to the isolation region 10 will be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10914179A JPS5633826A (en) | 1979-08-29 | 1979-08-29 | Manufacture of target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10914179A JPS5633826A (en) | 1979-08-29 | 1979-08-29 | Manufacture of target |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5633826A true JPS5633826A (en) | 1981-04-04 |
Family
ID=14502632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10914179A Pending JPS5633826A (en) | 1979-08-29 | 1979-08-29 | Manufacture of target |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5633826A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856333A (en) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | Formation of key pattern for mask alignment |
JPH03105876A (en) * | 1989-09-19 | 1991-05-02 | Ngk Insulators Ltd | Sodium-sulfur battery |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147179A (en) * | 1975-06-12 | 1976-12-17 | Fujitsu Ltd | Method of munufacturing of semiconductor device |
-
1979
- 1979-08-29 JP JP10914179A patent/JPS5633826A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147179A (en) * | 1975-06-12 | 1976-12-17 | Fujitsu Ltd | Method of munufacturing of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856333A (en) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | Formation of key pattern for mask alignment |
JPH03105876A (en) * | 1989-09-19 | 1991-05-02 | Ngk Insulators Ltd | Sodium-sulfur battery |
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