JPS5661140A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5661140A
JPS5661140A JP13913279A JP13913279A JPS5661140A JP S5661140 A JPS5661140 A JP S5661140A JP 13913279 A JP13913279 A JP 13913279A JP 13913279 A JP13913279 A JP 13913279A JP S5661140 A JPS5661140 A JP S5661140A
Authority
JP
Japan
Prior art keywords
film
films
mask
resist
isolation oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13913279A
Other languages
Japanese (ja)
Other versions
JPS5915494B2 (en
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13913279A priority Critical patent/JPS5915494B2/en
Publication of JPS5661140A publication Critical patent/JPS5661140A/en
Publication of JPS5915494B2 publication Critical patent/JPS5915494B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To form isolation oxide films with high accuracy by composing inter element isolation oxide films in two steps wherein the distance between the film and an emitter is reduced to improve integration and frequency characteristics and side photoetching is applied to mask formation when the films are composed of two- step configuration. CONSTITUTION:An Si3N4 film 20 is formed on an SiO2 film to located on an n epitaxial layer 3. A resist mask 30 is provided on the film 20 and side photoetching is applied to the film 20 by a predetermined amount. The resist 30 is softened by heating to cover the side etching section with the resist 30. Next, the SiO2 10 is opened by the mask 30 and the removal of etching is applied to an epitaxial layer 3 by predetermined depth. Next, isolation oxide films 11 reaching a substrate 1 is made by removing the mask 30 and by thermal treatment in oxide atomosphere. As a result, the films 11 become two step contiguration and the conventioned number of masks remains unchanged and the films will be formed with high accuracy as a side photoetching method is applied. Furthermore the distance between an emitter layer and the isoltion layer is reduced for high density and a device having high frequency characteristics will be obtained by reducing base area.
JP13913279A 1979-10-25 1979-10-25 Manufacturing method of semiconductor device Expired JPS5915494B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13913279A JPS5915494B2 (en) 1979-10-25 1979-10-25 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13913279A JPS5915494B2 (en) 1979-10-25 1979-10-25 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5661140A true JPS5661140A (en) 1981-05-26
JPS5915494B2 JPS5915494B2 (en) 1984-04-10

Family

ID=15238266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13913279A Expired JPS5915494B2 (en) 1979-10-25 1979-10-25 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5915494B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199234A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture thereof
JPS57199235A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture thereof
JPS57199258A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture of the same
JPS5990925A (en) * 1982-11-17 1984-05-25 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199234A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture thereof
JPS57199235A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture thereof
JPS57199258A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture of the same
JPS6217868B2 (en) * 1981-06-01 1987-04-20 Mitsubishi Electric Corp
JPS6251494B2 (en) * 1981-06-01 1987-10-30 Mitsubishi Electric Corp
JPH0451982B2 (en) * 1981-06-01 1992-08-20 Mitsubishi Electric Corp
JPS5990925A (en) * 1982-11-17 1984-05-25 Matsushita Electronics Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5915494B2 (en) 1984-04-10

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