JPS56169348A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56169348A
JPS56169348A JP7153480A JP7153480A JPS56169348A JP S56169348 A JPS56169348 A JP S56169348A JP 7153480 A JP7153480 A JP 7153480A JP 7153480 A JP7153480 A JP 7153480A JP S56169348 A JPS56169348 A JP S56169348A
Authority
JP
Japan
Prior art keywords
film
rectangular
mask
substrate
corners
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7153480A
Other languages
Japanese (ja)
Inventor
Toshinobu Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7153480A priority Critical patent/JPS56169348A/en
Publication of JPS56169348A publication Critical patent/JPS56169348A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To suppress the occurrence of a crystalline defect in a semiconductor device by burying an oxidized film in a depthwise direction in the periphery of a rectangular element region and cutting out the rectangular corners, thereby alleviating the strains. CONSTITUTION:An SiO2 film 16, and an Si3N4 film 17 are superposed on an Si substrate 15, and a resist mask 18 is formed. The corners of a rectangular mask pattern are partly cut out. Then, the layer 17 is etched, the mask 18 is removed, the substrate is thermally oxidized, and a field oxidized film 19 is formed. According to this configuration, a crystalline defect does not occur due to the concentration of the strain in the small pattern having less than 20mum of one side size, and leakage current is reduced, thereby improving the characteristics thereby.
JP7153480A 1980-05-30 1980-05-30 Semiconductor device Pending JPS56169348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7153480A JPS56169348A (en) 1980-05-30 1980-05-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7153480A JPS56169348A (en) 1980-05-30 1980-05-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56169348A true JPS56169348A (en) 1981-12-26

Family

ID=13463491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7153480A Pending JPS56169348A (en) 1980-05-30 1980-05-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56169348A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972740A (en) * 1982-10-19 1984-04-24 Nec Corp Semiconductor integrated circuit device and manufacture thereof
JPS6276655A (en) * 1985-09-30 1987-04-08 Toshiba Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972740A (en) * 1982-10-19 1984-04-24 Nec Corp Semiconductor integrated circuit device and manufacture thereof
JPS6276655A (en) * 1985-09-30 1987-04-08 Toshiba Corp Semiconductor integrated circuit device

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