JPS5793530A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5793530A
JPS5793530A JP17041680A JP17041680A JPS5793530A JP S5793530 A JPS5793530 A JP S5793530A JP 17041680 A JP17041680 A JP 17041680A JP 17041680 A JP17041680 A JP 17041680A JP S5793530 A JPS5793530 A JP S5793530A
Authority
JP
Japan
Prior art keywords
vapor phase
phase epitaxy
epitaxy method
oxide film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17041680A
Other languages
Japanese (ja)
Inventor
Hiroshi Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17041680A priority Critical patent/JPS5793530A/en
Publication of JPS5793530A publication Critical patent/JPS5793530A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve moisture resistance by using one obtained by heaping an oxide film by a vapor phase epitaxy method and a nitride film by a plasma vapor phase epitaxy method as a protective film for an element region. CONSTITUTION:An Al electrode is formed selectively on an oxide film 2 on a substrate 1 on which an element region is formed. On said electrode, an oxide film 4 and a plasma nitride film 5 are formed by means of a vapor phase epitaxy method and a plasma vapor phase epitaxy method, respectively. Taking a photoresist 6 as a mask, the oxide film 4 and the nitride film 5 are etched selectively. Hereby, occurrence of cracks is prevented, and thereby a protective film excellent in moisture resistance is obtained.
JP17041680A 1980-12-03 1980-12-03 Semiconductor device Pending JPS5793530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17041680A JPS5793530A (en) 1980-12-03 1980-12-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17041680A JPS5793530A (en) 1980-12-03 1980-12-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5793530A true JPS5793530A (en) 1982-06-10

Family

ID=15904513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17041680A Pending JPS5793530A (en) 1980-12-03 1980-12-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793530A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171245U (en) * 1985-04-11 1986-10-24
JPS63503184A (en) * 1986-05-02 1988-11-17 エイ・ティ・アンド・ティ・コーポレーション Manufacturing of semiconductor devices
JPH0582192A (en) * 1991-09-20 1993-04-02 Mitsubishi Electric Corp Fastener for substrate and substrate device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135292A (en) * 1974-09-20 1976-03-25 Matsushita Electric Ind Co Ltd Handotaisochi oyobi sonoseizohoho
JPS52104062A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Production of surface protection film of electronic parts

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135292A (en) * 1974-09-20 1976-03-25 Matsushita Electric Ind Co Ltd Handotaisochi oyobi sonoseizohoho
JPS52104062A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Production of surface protection film of electronic parts

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61171245U (en) * 1985-04-11 1986-10-24
JPS63503184A (en) * 1986-05-02 1988-11-17 エイ・ティ・アンド・ティ・コーポレーション Manufacturing of semiconductor devices
JPH0582192A (en) * 1991-09-20 1993-04-02 Mitsubishi Electric Corp Fastener for substrate and substrate device

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