JPS5377185A - Electrode formation method of semiconductor device - Google Patents

Electrode formation method of semiconductor device

Info

Publication number
JPS5377185A
JPS5377185A JP15304376A JP15304376A JPS5377185A JP S5377185 A JPS5377185 A JP S5377185A JP 15304376 A JP15304376 A JP 15304376A JP 15304376 A JP15304376 A JP 15304376A JP S5377185 A JPS5377185 A JP S5377185A
Authority
JP
Japan
Prior art keywords
semiconductor device
formation method
electrode formation
poly
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15304376A
Other languages
Japanese (ja)
Inventor
Shinpei Tsuchiya
Takao Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15304376A priority Critical patent/JPS5377185A/en
Publication of JPS5377185A publication Critical patent/JPS5377185A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form a poly-Si electrode at an accurate size by selectively converting a poly-Si layer to SiO2 using Si3N4 film as a mask, thereafter etching away the same.
COPYRIGHT: (C)1978,JPO&Japio
JP15304376A 1976-12-20 1976-12-20 Electrode formation method of semiconductor device Pending JPS5377185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15304376A JPS5377185A (en) 1976-12-20 1976-12-20 Electrode formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15304376A JPS5377185A (en) 1976-12-20 1976-12-20 Electrode formation method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5377185A true JPS5377185A (en) 1978-07-08

Family

ID=15553712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15304376A Pending JPS5377185A (en) 1976-12-20 1976-12-20 Electrode formation method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5377185A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969949A (en) * 1982-10-14 1984-04-20 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985978A (en) * 1972-10-04 1974-08-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985978A (en) * 1972-10-04 1974-08-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969949A (en) * 1982-10-14 1984-04-20 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5351970A (en) Manufacture for semiconductor substrate
JPS53108390A (en) Semiconductor device and its manufacture
JPS5431273A (en) Manufacture of semiconductor device
JPS53135263A (en) Production of semiconductor device
JPS5377185A (en) Electrode formation method of semiconductor device
JPS5339058A (en) Production of semiconductor device
JPS534469A (en) Semiconductor device
JPS547882A (en) Manufacture for semiconductor device
JPS53133373A (en) Manufacture of semiconductor device
JPS5327368A (en) Selective etching method
JPS5338986A (en) Semiconductor negative resistance element
JPS53135846A (en) Etching method
JPS5386177A (en) Production of semiconductor device
JPS5375771A (en) Manufacture for semiconductor device
JPS5377169A (en) Production of semiconductor device
JPS52123171A (en) Anisotropic etching method of semiconductor single crystal
JPS547867A (en) Manufacture for semiconductor device
JPS5315766A (en) Selective etching method of platinum layer
JPS532085A (en) Manufacture of mis-type semiconductor device
JPS52146565A (en) Production of semiconductor device
JPS5335383A (en) Semiconductor device
JPS546471A (en) Manufacture of semiconductor device
JPS538082A (en) Production of semiconductor device
JPS52119192A (en) Semiconductor
JPS53133376A (en) Manufacture of semiconductor device