JPS5763859A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5763859A JPS5763859A JP13927580A JP13927580A JPS5763859A JP S5763859 A JPS5763859 A JP S5763859A JP 13927580 A JP13927580 A JP 13927580A JP 13927580 A JP13927580 A JP 13927580A JP S5763859 A JPS5763859 A JP S5763859A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- electrode
- source
- field oxide
- drain diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H01L29/78—
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To made the density high and to improve a yield rate by forming masks on regions adjacent to source-drain diffused layers and a field oxide film and thereby forming an opening for an electrode. CONSTITUTION:On a silicon substrate 21 are formed the field oxide film 22, a gate oxide film 23 and a polycrysalline silicon gate 24, and further the source-drain diffused layes 25 and 26 are formed. Next, a nitride film is connected to the surface and etched, and thereby a nitride film 28 is formed on a gate electrode, while nitride films 29 and 30 are formed in the parts ranging from the source-drain diffused layers 25 and 26 to the field oxide film 22. Then, a thermal oxide film 31 is formed in the oxygen atmosphere, the nitride films are removed, and the opening for an electrode is formed. And further metal is evaporated, patterning is conducted, and thus the electrode is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13927580A JPS5763859A (en) | 1980-10-07 | 1980-10-07 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13927580A JPS5763859A (en) | 1980-10-07 | 1980-10-07 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5763859A true JPS5763859A (en) | 1982-04-17 |
Family
ID=15241484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13927580A Pending JPS5763859A (en) | 1980-10-07 | 1980-10-07 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5763859A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266523A (en) * | 1991-11-14 | 1993-11-30 | Micron Technology, Inc. | Method of forming self-aligned contacts using the local oxidation of silicon |
-
1980
- 1980-10-07 JP JP13927580A patent/JPS5763859A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5266523A (en) * | 1991-11-14 | 1993-11-30 | Micron Technology, Inc. | Method of forming self-aligned contacts using the local oxidation of silicon |
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