JPS5762553A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5762553A JPS5762553A JP55138530A JP13853080A JPS5762553A JP S5762553 A JPS5762553 A JP S5762553A JP 55138530 A JP55138530 A JP 55138530A JP 13853080 A JP13853080 A JP 13853080A JP S5762553 A JPS5762553 A JP S5762553A
- Authority
- JP
- Japan
- Prior art keywords
- projection
- width
- forming
- oxidized
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the element occupying area of a semiconductor device by forming a projection on a semiconductor substrate, forming the device on the top of the projection, defining the width of the current passage of the element not by diffusion but by etching size and employing the etching groove for the isolation between the elements. CONSTITUTION:An N type diffused layer 32 is formed on a P type silicon substrate 31, a P type resistance diffused layer 33 is formed therein, an oxidized film is formed on the surface, is selectively etched to form oxidized films 34a, 34b, which are used as masks for forming the isolating groove, with the masks the substrate 31, the layers 32, 33 are partly selectively etched to form an isolating groove 35. As a result, the part of the oxidized film mask 34a becomes the top of the projection, the width of the layer 35 is accurately determined by the width of the oxidized mask 34a, is isolated by the isolating groove 35, contacting holes 37a, 37b are opened, conductive films 38a, 38b are formed, thereby obtaining semiconductor resistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55138530A JPS5762553A (en) | 1980-10-03 | 1980-10-03 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55138530A JPS5762553A (en) | 1980-10-03 | 1980-10-03 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5762553A true JPS5762553A (en) | 1982-04-15 |
Family
ID=15224300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55138530A Pending JPS5762553A (en) | 1980-10-03 | 1980-10-03 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762553A (en) |
-
1980
- 1980-10-03 JP JP55138530A patent/JPS5762553A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6437840A (en) | Manufacture of semiconductor device with planar structure | |
| JPS5762553A (en) | Semiconductor device | |
| JPS5792858A (en) | Semiconductor integrated circuit device and manufacture thereof | |
| JPS57111042A (en) | Manufacture of semiconductor device | |
| JPS56111264A (en) | Manufacture of semiconductor device | |
| JPS57167659A (en) | Manufacture of semiconductor device | |
| JPS56105677A (en) | Complementary type high breakdown voltage semiconductor device and manufacture thereof | |
| JPS56169348A (en) | Semiconductor device | |
| JPS5642356A (en) | Manufacture of semiconductor device | |
| JPS56126957A (en) | Manufacture of semiconductor device | |
| JPS56164550A (en) | Manufacture of semiconductor device | |
| JPS57169259A (en) | Manufacture of semiconductor device | |
| JPS56105669A (en) | Manufacture of mesa type semiconductor pellet | |
| JPS5642355A (en) | Manufacture of semiconductor device | |
| JPS577948A (en) | Semiconductor device and its manufacture | |
| JPS57206075A (en) | Manufacture of mos type semiconductor device | |
| JPS5732653A (en) | Manufacture of semiconductor device | |
| JPS5799781A (en) | Manufacture of semiconductor device | |
| JPS56130947A (en) | Manufacture of semiconductor device | |
| JPS56120155A (en) | Coil for semiconductor integrated circuit and its manufacture | |
| JPS5633837A (en) | Manufacture of semiconductor device | |
| JPS5745924A (en) | Manufacture of semiconductor device | |
| JPS5779633A (en) | Manufacture of semiconductor device | |
| JPS5565456A (en) | Manufacture of semiconductor device | |
| JPS5575234A (en) | Semiconductor device |