JPS5642355A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5642355A
JPS5642355A JP11707279A JP11707279A JPS5642355A JP S5642355 A JPS5642355 A JP S5642355A JP 11707279 A JP11707279 A JP 11707279A JP 11707279 A JP11707279 A JP 11707279A JP S5642355 A JPS5642355 A JP S5642355A
Authority
JP
Japan
Prior art keywords
polysilicon
si3n4
film
mask
polysilicons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11707279A
Other languages
Japanese (ja)
Inventor
Shiyouji Ariizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11707279A priority Critical patent/JPS5642355A/en
Publication of JPS5642355A publication Critical patent/JPS5642355A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To contrive the improvement in the integrity of the semiconductor device by forming a polysilicon film on an Si substrate, etching it in electrode and wire pattern with Si3N4 mask, forming an SiO2 film on the exposed surface of the substrate and the polysilicon, then etching Si3N4 mask and forming a conductive layer on the polysilicon. CONSTITUTION:An N type polysilicon 24 is superimposed on the field oxide film and the gate oxide film 23 on a P type Si substrate, Si3N4 masks 261, 262 are covered thereon, the polysilicon 24 is etched, and polysilicons 241, 242 are retained together with the film 23. Then, the mask 262 is selectively opened, and Si3N4 masks 281, 282 are formed thereon. Subsequently, an N<+> type diffused layer is formed thereon, is thermally oxidized, and SiO2 film 29 is covered thereon. Eventually, the masks 281, 282 are etched, and a wiring layer 31 is formed thereon. Since the connecting holes 301, 302 are self-matched in the same width as those of the polysilicons 241, 242 according to this configuration, it is not necessary to provide the mask margin. Further, the polysilicons 241, 31 are self-matched in connection on the gate. Accordingly, it can remarkably improve the integrity of the semiconductor device.
JP11707279A 1979-09-12 1979-09-12 Manufacture of semiconductor device Pending JPS5642355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11707279A JPS5642355A (en) 1979-09-12 1979-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11707279A JPS5642355A (en) 1979-09-12 1979-09-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5642355A true JPS5642355A (en) 1981-04-20

Family

ID=14702709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11707279A Pending JPS5642355A (en) 1979-09-12 1979-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642355A (en)

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