JPS5483785A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5483785A
JPS5483785A JP15196677A JP15196677A JPS5483785A JP S5483785 A JPS5483785 A JP S5483785A JP 15196677 A JP15196677 A JP 15196677A JP 15196677 A JP15196677 A JP 15196677A JP S5483785 A JPS5483785 A JP S5483785A
Authority
JP
Japan
Prior art keywords
layer
resistance layer
oxidized film
diffusion
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15196677A
Other languages
Japanese (ja)
Inventor
Katsuyuki Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15196677A priority Critical patent/JPS5483785A/en
Publication of JPS5483785A publication Critical patent/JPS5483785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form a high resistance layer with both low-density diffusion and following thermal oxidation omitted. CONSTITUTION:In thermally-oxidized film 2 on N-type Si substrate 1, an opening is made and B diffusion is done to form source and drain 4 and resistance layer 7. By resist mask 8, an opening is provided to film 2 on layer 7 and the Si surface is etched to form high resistance layer 3 equivalent to that obtained through low- density diffusion. Next, an oxidized film is produced on layer 3 at the same time as the formation of gate oxidized film 5, and Al electrode wiring 6 is made.
JP15196677A 1977-12-16 1977-12-16 Manufacture of semiconductor device Pending JPS5483785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15196677A JPS5483785A (en) 1977-12-16 1977-12-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15196677A JPS5483785A (en) 1977-12-16 1977-12-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5483785A true JPS5483785A (en) 1979-07-04

Family

ID=15530098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15196677A Pending JPS5483785A (en) 1977-12-16 1977-12-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5483785A (en)

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