Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP14204675ApriorityCriticalpatent/JPS5265663A/en
Publication of JPS5265663ApublicationCriticalpatent/JPS5265663A/en
PURPOSE: To produce ICs at high yield by selectively oxidizing poly Si with an Si3N4 film opened with windows to required patterns as a mask, and forming diffusion windows by opening windows only in the resultant SiO2 through etching.
COPYRIGHT: (C)1977,JPO&Japio
JP14204675A1975-11-271975-11-27Production of semiconductor device
PendingJPS5265663A
(en)