JPS5491071A - Manufacture of silicon gate type field effect transistor - Google Patents

Manufacture of silicon gate type field effect transistor

Info

Publication number
JPS5491071A
JPS5491071A JP15800377A JP15800377A JPS5491071A JP S5491071 A JPS5491071 A JP S5491071A JP 15800377 A JP15800377 A JP 15800377A JP 15800377 A JP15800377 A JP 15800377A JP S5491071 A JPS5491071 A JP S5491071A
Authority
JP
Japan
Prior art keywords
sio
phosphorus
poly
mask
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15800377A
Other languages
Japanese (ja)
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15800377A priority Critical patent/JPS5491071A/en
Publication of JPS5491071A publication Critical patent/JPS5491071A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To manufacture a miniature high-speed FET by providing poly-Si onto a P-type substrate via a SiO2 mask, by using the 2nd SiO2 mask for phosphorus diffusion, and by diffusing phosphorus again with the 2nd mask removed after selective oxidation.
CONSTITUTION: Poly-Si 5 is provided to SiO2 2 with an opening on the P-type substrate and its surface is oxidized to provide SiO2 films 6 to 8 selectively. After phosphorus diffusion layer 9 is provided by using masks 6 to 8, films 6 to 8 are removed and poly-Si 5 is converted into SiO2 10 until the substrate interface. At this time, N-type layers 11 and 12 are produced at the same time as gate-electrode- formation part 13. Since no phosphorus resides under films 6 to 8, the oxidation is slow. Next, SiO2 is removed over the entire surface, phosphorus is diffused to remaining poly-Si to lead out layers 11 and 12 to the surface by the N-type layer, and the gate electrode is made at the same time. Next, Al wiring 14 is done and all processes are finished. In this constitution, a miniature high-density Si gate FET can be formed and operates at a high speed because of small parasitic capacity.
COPYRIGHT: (C)1979,JPO&Japio
JP15800377A 1977-12-28 1977-12-28 Manufacture of silicon gate type field effect transistor Pending JPS5491071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15800377A JPS5491071A (en) 1977-12-28 1977-12-28 Manufacture of silicon gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15800377A JPS5491071A (en) 1977-12-28 1977-12-28 Manufacture of silicon gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5491071A true JPS5491071A (en) 1979-07-19

Family

ID=15662115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15800377A Pending JPS5491071A (en) 1977-12-28 1977-12-28 Manufacture of silicon gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5491071A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199870A (en) * 1989-01-27 1990-08-08 Nec Corp Insulated gate field effect transistor
JPH07240501A (en) * 1994-02-28 1995-09-12 Nec Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199870A (en) * 1989-01-27 1990-08-08 Nec Corp Insulated gate field effect transistor
JPH07240501A (en) * 1994-02-28 1995-09-12 Nec Corp Semiconductor integrated circuit device

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