JPS5745924A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745924A
JPS5745924A JP12118880A JP12118880A JPS5745924A JP S5745924 A JPS5745924 A JP S5745924A JP 12118880 A JP12118880 A JP 12118880A JP 12118880 A JP12118880 A JP 12118880A JP S5745924 A JPS5745924 A JP S5745924A
Authority
JP
Japan
Prior art keywords
window
region
film
emitter
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12118880A
Other languages
Japanese (ja)
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12118880A priority Critical patent/JPS5745924A/en
Publication of JPS5745924A publication Critical patent/JPS5745924A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a semiconductor device having good switching characteristics by forming an insulating film to be coated on a semiconductor layer of two types of insulating films having different thicknesses and etching characteristics when double diffusions are performed in the semiconductor layer with the insulating film opened with a window, forming the window at the boundary region of these insulating layers and diffusing it, thereby reducing the emitter area. CONSTITUTION:A thick SiO2 film 22 is covered on an N type Si substrate 20 to become a collector region, is patterned to open a base contacting window 15 and a collector contacting window 26, a photoresist film 24 is covered on the window 26, impurity ions are injected in the window 25, and a P type base region 21 is formed. Then, the film 24 is removed, is selectively thermally nitrided to form a thin Si3N4 film 23 in the windows 25, 26, a mask of the resist film 24 is again formed, is etched, a diffusion window 28 disposed on the region 21 is opened at the boundary by utilizing the difference of the characteristics between the films 22 and 23, and an N type emitter region 30 having extremely small area is formed by ion injection or the like. In this manner the area of the region 30 is reduced, thereby decreasing the emitter-base junction capacity.
JP12118880A 1980-09-03 1980-09-03 Manufacture of semiconductor device Pending JPS5745924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12118880A JPS5745924A (en) 1980-09-03 1980-09-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12118880A JPS5745924A (en) 1980-09-03 1980-09-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5745924A true JPS5745924A (en) 1982-03-16

Family

ID=14805029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12118880A Pending JPS5745924A (en) 1980-09-03 1980-09-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745924A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105198U (en) * 1989-02-07 1990-08-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105198U (en) * 1989-02-07 1990-08-21

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