JPS5799781A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5799781A JPS5799781A JP12486981A JP12486981A JPS5799781A JP S5799781 A JPS5799781 A JP S5799781A JP 12486981 A JP12486981 A JP 12486981A JP 12486981 A JP12486981 A JP 12486981A JP S5799781 A JPS5799781 A JP S5799781A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- electrodes
- si3n4
- mask
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an electrode or a wiring line having predetermined resistanc value by a method wherein a Si3N4 mask is formed onto a Si substrate, and oxidized selectively, the mask is removed and impurities are introduced. CONSTITUTION:P Type source and drain 2, 3 are shaped to the N type si substrate 1, a SiO2 film 4 is opened and P type Si 5 is stacked. The Si3N4 mask 6 is formed, the whole is thermally oxidized, the layer 5 is changed selectively into SiO2 10, and electrodes 7-9 are shaped by the remaining layer 5. The SiO2 films 10 are lightly etched and made the same planes as the electrodes 7-9, the Si3N4 6 is removed, the surface is coated with SiO2 11, and the semiconductor device is completed. According to this constitution, the electrodes and wiring having high reliability are obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12486981A JPS5799781A (en) | 1981-08-10 | 1981-08-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12486981A JPS5799781A (en) | 1981-08-10 | 1981-08-10 | Manufacture of semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP654177A Division JPS5284989A (en) | 1977-01-24 | 1977-01-24 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5799781A true JPS5799781A (en) | 1982-06-21 |
| JPH0427694B2 JPH0427694B2 (en) | 1992-05-12 |
Family
ID=14896105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12486981A Granted JPS5799781A (en) | 1981-08-10 | 1981-08-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799781A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932635A (en) * | 1972-07-21 | 1974-03-25 |
-
1981
- 1981-08-10 JP JP12486981A patent/JPS5799781A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932635A (en) * | 1972-07-21 | 1974-03-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0427694B2 (en) | 1992-05-12 |
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