JPS5693358A - Manufacture of resistor - Google Patents

Manufacture of resistor

Info

Publication number
JPS5693358A
JPS5693358A JP17332079A JP17332079A JPS5693358A JP S5693358 A JPS5693358 A JP S5693358A JP 17332079 A JP17332079 A JP 17332079A JP 17332079 A JP17332079 A JP 17332079A JP S5693358 A JPS5693358 A JP S5693358A
Authority
JP
Japan
Prior art keywords
film
resistor
layer
electrode
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17332079A
Other languages
Japanese (ja)
Inventor
Iwahiko Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17332079A priority Critical patent/JPS5693358A/en
Publication of JPS5693358A publication Critical patent/JPS5693358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To obtain a desired resistance value by a method wherein when a semiconductor device in which a resistor is contained, a polycrystalline Si layer is used as the resistor, and an adjustment of a resistance value is constolled by an injection of impurity ions and by a distance between electrodes fixed to the resistor. CONSTITUTION:An SiO2 film 2 is convar-attached on a P type semiconductor substrate 1, the same on a region in which a source, drain and gate are formed is removed, a new thin gate SiO2 film 8 is formed, a polycrystalline Si layer 9 is made growth on the whole surface including the film 8 and P type impurity ions are injected so as to make a desired resistor. Then, the layer 9 is applied a photographic etching to permit the resisting means 10 to stay on the film 2 and an electrode means 11 on the film 8, the films 8 on both sides of the electrode means 11 are removed, and N type source and drain regions 13, 13' are diffusion-formed in the substrate 1 exposed. After that, PSG film 6 is cover-attached on the whole surface, the openings for the electrodes are perforated, and the electrode wiring connecting one end of the resisting means 10 with the region 13 and the electrode wiring situated at the other end of the resisting means 10 are formed by the Al evaporation.
JP17332079A 1979-12-26 1979-12-26 Manufacture of resistor Pending JPS5693358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17332079A JPS5693358A (en) 1979-12-26 1979-12-26 Manufacture of resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17332079A JPS5693358A (en) 1979-12-26 1979-12-26 Manufacture of resistor

Publications (1)

Publication Number Publication Date
JPS5693358A true JPS5693358A (en) 1981-07-28

Family

ID=15958243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17332079A Pending JPS5693358A (en) 1979-12-26 1979-12-26 Manufacture of resistor

Country Status (1)

Country Link
JP (1) JPS5693358A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148444A (en) * 1982-03-01 1983-09-03 Matsushita Electric Ind Co Ltd Manufacture of integrated circuit
JPS63122269A (en) * 1986-11-12 1988-05-26 Nec Corp Manufacture of semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148444A (en) * 1982-03-01 1983-09-03 Matsushita Electric Ind Co Ltd Manufacture of integrated circuit
JPS63122269A (en) * 1986-11-12 1988-05-26 Nec Corp Manufacture of semiconductor integrated circuit

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