JPS5683061A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5683061A JPS5683061A JP16055979A JP16055979A JPS5683061A JP S5683061 A JPS5683061 A JP S5683061A JP 16055979 A JP16055979 A JP 16055979A JP 16055979 A JP16055979 A JP 16055979A JP S5683061 A JPS5683061 A JP S5683061A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- polycrystal silicon
- polycrystal
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- -1 arsenic ions Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To form a resistor in a self-matching shape and obtain a semiconductor device having a high degree of integration by a method wherein impurities are selectively introduced into a polycrystal silicon layer forming a gate electrode, using high melting-point metal wiring layers made up on the polycrystal layer as masks. CONSTITUTION:An N type impurity diffusion layer 102 formed on a P type silicon substrate 101 and polycrystal silicon films 103, 104 are glued. A molybdenum film 105 is disposed through a layer silicon oxide film 108, and an aluminum film 106 is arranged through a layer film 109. Since the polycrystal silicon film 104 is coated with the molybdenum film 105, impurities are not introduced by the injection of arsenic ions for forming the N type region 102, and the polycrystal silicon film 104 is changed into a resistance element self-matched with the molybdenum wiring layer 105. The polycrystal silicon film 103 is turned into a wiring layer with low resistance because arsenic is sufficiently introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16055979A JPS5683061A (en) | 1979-12-11 | 1979-12-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16055979A JPS5683061A (en) | 1979-12-11 | 1979-12-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5683061A true JPS5683061A (en) | 1981-07-07 |
Family
ID=15717599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16055979A Pending JPS5683061A (en) | 1979-12-11 | 1979-12-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683061A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
-
1979
- 1979-12-11 JP JP16055979A patent/JPS5683061A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745967A (en) * | 1980-09-04 | 1982-03-16 | Toshiba Corp | Semiconductor device |
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