JPS55125648A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS55125648A JPS55125648A JP3373579A JP3373579A JPS55125648A JP S55125648 A JPS55125648 A JP S55125648A JP 3373579 A JP3373579 A JP 3373579A JP 3373579 A JP3373579 A JP 3373579A JP S55125648 A JPS55125648 A JP S55125648A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- poly
- wiring
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an IC having a remarkably low wiring resistance, by providing a metal silicide layer on the surface of a poly-Si layer used for electrodes of and wiring for an element and on the surface of an impurity diffusion layer used for electrodes of and wiring for a semiconductor. CONSTITUTION:A p<+> channel stopper 22 and a field dioxide film 23 are provided on a p-type Si substrate 21. A poly-Si gate electrode 25 is laminated on a gate insulating film 24, and n<+> diffusion layers 27, 28 are formed. Metal silicide films 26, 28, 30 are formed on the poly-Si layer 25 and n<+> layers 27, 28, respectively. When Pt or Ni is used for the metal in the metal silicide to form a layer of around 0.1mum on the layers 25, 27, 28, the value of resistance in the poly-Si or n<+> layers can be reduced to a not-less-than-one-digit smaller value. When the layer 25 is formed to a thickness of around 0.2mum, the silicide layer 26 has no influence upon the work function of the poly-Si layer 25. Even when the n<+> layers 27, 28 are as shallow as around 0.5mum, the silicide layer does not break through its junction surface. The silicide layers and metal wiring make sufficiently low ohmic contact without being treated at a high temperature. Thus, an IC which is operated at a high speed owing to a remarkably low wiring resistance can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373579A JPS55125648A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373579A JPS55125648A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55125648A true JPS55125648A (en) | 1980-09-27 |
Family
ID=12394655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3373579A Pending JPS55125648A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125648A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59136970A (en) * | 1983-01-27 | 1984-08-06 | Seiko Instr & Electronics Ltd | Semiconductor device |
| JPS60217657A (en) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5247371A (en) * | 1975-10-13 | 1977-04-15 | Mitsubishi Electric Corp | Process for production of semiconductor device |
| JPS53124091A (en) * | 1977-04-05 | 1978-10-30 | Nec Corp | Solid state electron device and its manufacture |
-
1979
- 1979-03-22 JP JP3373579A patent/JPS55125648A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5247371A (en) * | 1975-10-13 | 1977-04-15 | Mitsubishi Electric Corp | Process for production of semiconductor device |
| JPS53124091A (en) * | 1977-04-05 | 1978-10-30 | Nec Corp | Solid state electron device and its manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59136970A (en) * | 1983-01-27 | 1984-08-06 | Seiko Instr & Electronics Ltd | Semiconductor device |
| JPS60217657A (en) * | 1984-04-12 | 1985-10-31 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57141962A (en) | Semiconductor integrated circuit device | |
| JPS55125649A (en) | Production of semiconductor integrated circuit | |
| JPS5643749A (en) | Semiconductor device and its manufacture | |
| JPS56164578A (en) | Manufacture of mos type semiconductor device | |
| JPS55125648A (en) | Semiconductor integrated circuit | |
| JPS55125651A (en) | Production of semiconductor integrated circuit | |
| JPS56100441A (en) | Semiconductor ic device with protection element and manufacture thereof | |
| JPS57132352A (en) | Complementary type metal oxide semiconductor integrated circuit device | |
| JPS6489457A (en) | Manufacture of semiconductor device | |
| JPS5772344A (en) | Manufacture of semiconductor device | |
| JPS568846A (en) | Semiconductor integrated circuit | |
| JPS551179A (en) | Complementary mis integrated circuit apparatus | |
| JPS55125646A (en) | Semiconductor device | |
| JPS5651874A (en) | Semiconductor device | |
| JPS568849A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5646558A (en) | Semiconductor device | |
| JPS52117079A (en) | Preparation of semiconductor device | |
| JPS55127055A (en) | Manufacture of semiconductor device | |
| JPS5552254A (en) | Semiconductor device | |
| JPS55143068A (en) | Insulated gate semiconductor device | |
| JPS5558573A (en) | Manufacture of mis semiconductor device | |
| JPS5327372A (en) | Production of s emiconductor device | |
| JPS5635436A (en) | Semiconductor device | |
| JPS54144182A (en) | Semiconductor device | |
| JPS5271994A (en) | Semiconductor integrated circuit device |