JPS5680154A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5680154A JPS5680154A JP15834079A JP15834079A JPS5680154A JP S5680154 A JPS5680154 A JP S5680154A JP 15834079 A JP15834079 A JP 15834079A JP 15834079 A JP15834079 A JP 15834079A JP S5680154 A JPS5680154 A JP S5680154A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- layer
- resistor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- -1 oxygen ions Chemical class 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a resistance circuit of high accuracy by partially coating the surface of the semiconductor film provided on a semicondcutor substrate with a metal film and doping impurities to make the regions not covered with said metal have low or high resistance. CONSTITUTION:Into the striped regions to be a resistor and wirings ona p type Si substrate 1, phosphorus is selectively diffused to form an n<-> type layer 2. Then through a silicon oxide film 3 an Mo film 4 is provided and patterned so as to remain only on the resistor region. After that, ions are implanted to make the regions not covered with the No film 4 n<+> type layers 51 and 52. Thus, a structure can be obtained comprising the n<-> type layer 2 as a resistor and the n<+> type layers 51 and 52 as wirings. In addition, after the Mo layer 4 is formed on the parts to be wired on the n<-> type layer 2, also a resistance region 6 of high resistance can be formed by implanting oxygen ions or nitrogen ions. An insulating layer can be provided between the p type Si substrate 1 and the n<-> type layer 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15834079A JPS5680154A (en) | 1979-12-06 | 1979-12-06 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15834079A JPS5680154A (en) | 1979-12-06 | 1979-12-06 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5680154A true JPS5680154A (en) | 1981-07-01 |
Family
ID=15669492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15834079A Pending JPS5680154A (en) | 1979-12-06 | 1979-12-06 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5680154A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5877253A (en) * | 1981-10-19 | 1983-05-10 | インテル・コーポレーシヨン | Integrated circuit resistor and method of producing same |
| JPS61160961A (en) * | 1985-01-08 | 1986-07-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1979
- 1979-12-06 JP JP15834079A patent/JPS5680154A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5877253A (en) * | 1981-10-19 | 1983-05-10 | インテル・コーポレーシヨン | Integrated circuit resistor and method of producing same |
| JPH0468786B2 (en) * | 1981-10-19 | 1992-11-04 | Intel Corp | |
| JPS61160961A (en) * | 1985-01-08 | 1986-07-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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