JPS5582458A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5582458A JPS5582458A JP15495078A JP15495078A JPS5582458A JP S5582458 A JPS5582458 A JP S5582458A JP 15495078 A JP15495078 A JP 15495078A JP 15495078 A JP15495078 A JP 15495078A JP S5582458 A JPS5582458 A JP S5582458A
- Authority
- JP
- Japan
- Prior art keywords
- resistance element
- phosphor
- dose
- ions
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To form a high resistance element that its accuracy is high and its integration degree is high, by injecting not less than one kind between oxygen or nitrogen into a resistance element region in a polycrystal silicon layer on a substrate in ionic shapes. CONSTITUTION:A silicon oxide film 22 with 1mu thickness is made up on a p-type Si substrate 21, and a phosphor added polysilicon layer 23 is attached by means of a method, such as a CVD method in a phosphor atmosphere and patterned. The electrode portions at the both ends are coated with oxide silicon films 24, and not less than one kind between O or N ions are injected into the phosphor added polysilicon layer 23 in the quantity of dose of 10<12>-10<18>/cm<2> as using the oxide silicon film 24 as a mask. The whole may be heated. A high resistance element with 1kOMEGA- 10<5>MOMEGA that SiOx(x<=2) or Si3Nx(x<=4) or both are formed is built up in the region to which ions are injected. The resistance element made up in this way has the excellent accuracy of dimensions, and the desired resistance value can precisely be obtained by the control of the quantity of dose.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15495078A JPS5582458A (en) | 1978-12-18 | 1978-12-18 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15495078A JPS5582458A (en) | 1978-12-18 | 1978-12-18 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5582458A true JPS5582458A (en) | 1980-06-21 |
Family
ID=15595452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15495078A Pending JPS5582458A (en) | 1978-12-18 | 1978-12-18 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5582458A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6024050A (en) * | 1983-07-19 | 1985-02-06 | Fujitsu Ltd | Manufacture of thin film element |
| JPS62219653A (en) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | Semiconductor device |
| US5013686A (en) * | 1987-09-30 | 1991-05-07 | Samsung Electronics Co., Ltd. | Method of making semiconductor devices having ohmic contact |
| US5037766A (en) * | 1988-12-06 | 1991-08-06 | Industrial Technology Research Institute | Method of fabricating a thin film polysilicon thin film transistor or resistor |
| US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
| CN105826163A (en) * | 2015-01-07 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof |
| KR20180087957A (en) | 2017-01-26 | 2018-08-03 | 동우 화인켐 주식회사 | Hard coating film and display window using the same |
-
1978
- 1978-12-18 JP JP15495078A patent/JPS5582458A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6024050A (en) * | 1983-07-19 | 1985-02-06 | Fujitsu Ltd | Manufacture of thin film element |
| JPH0454981B2 (en) * | 1983-07-19 | 1992-09-01 | Fujitsu Ltd | |
| JPS62219653A (en) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | Semiconductor device |
| JPH0535578B2 (en) * | 1986-03-20 | 1993-05-26 | Hitachi Ltd | |
| US5013686A (en) * | 1987-09-30 | 1991-05-07 | Samsung Electronics Co., Ltd. | Method of making semiconductor devices having ohmic contact |
| US5037766A (en) * | 1988-12-06 | 1991-08-06 | Industrial Technology Research Institute | Method of fabricating a thin film polysilicon thin film transistor or resistor |
| US5859445A (en) * | 1990-11-20 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device including thin film transistors having spoiling impurities added thereto |
| US6011277A (en) * | 1990-11-20 | 2000-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated field effect transistors and method of manufacturing the same |
| CN105826163A (en) * | 2015-01-07 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof |
| KR20180087957A (en) | 2017-01-26 | 2018-08-03 | 동우 화인켐 주식회사 | Hard coating film and display window using the same |
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