CN105826163A - Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof - Google Patents
Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof Download PDFInfo
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- CN105826163A CN105826163A CN201510007133.6A CN201510007133A CN105826163A CN 105826163 A CN105826163 A CN 105826163A CN 201510007133 A CN201510007133 A CN 201510007133A CN 105826163 A CN105826163 A CN 105826163A
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Abstract
The invention provides a preparation method of an HRP (High Resistance Poly) resistor and a method for changing the resistance thereof. The preparation method comprises the steps of carrying out implantation of a first ion B on a resistor body, and then carrying out implantation of a second ion O. A substitution B and an interstice O form a BsO2i complex which does not affect the resistance at certain light conditions, so that the property of the resistor can be changed by changing the carrier concentration of the ion B, and thus the resistance of the HRP resistor can be changed. In addition, the preparation method is simple, each to implement and good for production. Furthermore, in the method provided by the invention for changing the resistance of the HRP resistor, only a certain period of illumination with certain intensity is required to be carried out if the resistance of the HRP resistor is required to be increased; and only heat treatment is carried out at a certain temperature if the resistance of the HRP resistor is required to be decreased.
Description
Technical field
The present invention relates to field of semiconductor manufacture, the preparation method particularly relating to a kind of HRP resistance and the method changing its resistance.
Background technology
In the manufacture process of semiconductor chip, in order to realize some function of device, it will usually make some high value devices, such as HRP (HighResistancePoly, high-resistance polysilicon) resistance in the chips.In prior art, the common preparation method of HRP resistance includes the most several:
Method one: directly carry out the first ion implanting IMP1 (ion of injection such as B or BF at the unadulterated crystalline silicon specific region formed2), inject the concentration of ion by regulation and change the resistance of crystalline silicon, to reach required resistance device；
Method two: a part of region on unadulterated crystalline silicon carries out the first ion implanting IMP1, again by the illumination step of HRP, the second ion implanting IMP2 is carried out in another part region, the ionic type of the second ion implanting IMP2 is consistent with the ionic type of the first ion implanting IMP1, but there is difference in the ion concentration injected, equally can be by regulation；
Method three: a same part on unadulterated crystalline silicon carries out the first ion implanting IMP1；Again by HRP illumination step, the second ion implanting IMP2 is carried out in another part region, except for the difference that the ionic type of the second ion implanting IMP2 and the ionic type of the first ion implanting IMP1 are contrary, be necessary to ensure that is that the ion concentration injected exists certain difference, it is to avoid both are non-full remunerations.
But, the HRP resistance using said method preparation to be formed once completes, its resistance will be fixed, controllability is lacked at some aspect of performance, the application conditions of the most this fixing high value device is the most single and strict, for the device that some different resistances can realize difference in functionality, the device of the HRP resistance that this resistance is fixing is just difficult to so as to utilizing, and a kind of device that can simply regulate resistance is worth and just can emerge from.
It is, therefore, desirable to provide a kind of resistance adjustable HRP resistance, to meet the difference in functionality of device.
Summary of the invention
The preparation method that it is an object of the invention to provide a kind of HRP resistance and the method changing its resistance, the HRP resistance prepared can the most accurately change, and device can be made to meet difference in functionality.
To achieve these goals, the present invention proposes the preparation method of a kind of HRP resistance, including step:
Resistance body is provided；
Carrying out the first ion implanting on described resistance body, the ionic type of the first ion implanting described includes B ion；
Forming photoresistance on described resistance body, described photoresistance exposes partial ohmic main body；
Carrying out the second ion implanting on the resistance body exposed, the ionic type of described the second ion implanting includes O ion；
Described resistance body is carried out rapid thermal anneal process process, forms HRP resistance.
Further, in the preparation method of described HRP resistance, the first ion implanting described uses B or BF2。
Further, in the preparation method of described HRP resistance, described the second ion implanting uses O2。
Further, in the preparation method of described HRP resistance, the degree of depth of described the second ion implanting is identical with the degree of depth of the first ion implanting described.
Further, in the preparation method of described HRP resistance, the concentration of described the second ion implanting is higher than the concentration 1 of the first ion implanting described～3 orders of magnitude.
Further, in the preparation method of described HRP resistance, described resistance body is crystalline silicon.
Further, in the preparation method of described HRP resistance, the temperature range of described rapid thermal anneal process is 800 DEG C～1200 DEG C, and annealing time scope is 1s～60min.
The invention allows for a kind of method changing HRP resistance, for changing the resistance of HRP resistance, described HRP resistance uses the preparation method of the HRP resistance as described in any one to be above prepared from, including step:
If the resistance making described HRP resistance increases, then under predetermined light intensity, irradiate described HRP resistance；
If the resistance making described HRP resistance reduces, the most described HRP resistance is carried out heat treatment.
Further, in the method for described change HRP resistance, described range of light intensity is AM1～AM2.
Further, in the method for described change HRP resistance, described light application time scope is 1 hour～2 hours.
Further, in the method for described change HRP resistance, described heat-treatment temperature range is 100 DEG C～250 DEG C.
Further, in the method for described change HRP resistance, described heat treatment time scope is 0～20 hour.
Compared with prior art, the beneficial effects are mainly as follows: resistance body is carried out the injection of the first ion B, carries out the injection of the second ion O the most again, owing to, under certain illumination condition, displacement B and gap O forms the B not interfering with resistancesO2iComplex, makes the carrier concentration of B reduce such that it is able to change the character of resistance, and then can change the resistance of HRP resistance, and, this preparation method is simple, is beneficial to produce.
Further, in the method for the change HRP resistance of proposition, if making HRP resistance become big, it is only necessary to carry out the illumination of certain time and intensity；As HRP resistance need to be made to diminish, only heat treatment need to be carried out at a certain temperature.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of HRP resistance in one embodiment of the invention；
Fig. 2 to Fig. 5 is the generalized section in one embodiment of the invention in HRP resistance preparation process.
Detailed description of the invention
To the preparation method of the HRP resistance of the present invention below in conjunction with schematic diagram and change the method for its resistance and be described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise invention described herein, and still realize the advantageous effects of the present invention.Therefore, it is widely known that description below is appreciated that for those skilled in the art, and is not intended as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.In the following description, it is not described in detail known function and structure, because they can make to due to the fact that unnecessary details and chaotic.Will be understood that in the exploitation of any practical embodiments, it is necessary to make a large amount of implementation detail to realize the specific objective of developer, such as according to about system or about the restriction of business, an embodiment change into another embodiment.Additionally, it should it is complicated and time-consuming to think that this development is probably, but it is only routine work to those skilled in the art.
Referring to the drawings the present invention the most more particularly described below in the following passage.According to following explanation and claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all uses the form simplified very much and all uses non-ratio accurately, only in order to facilitate, to aid in illustrating lucidly the purpose of the embodiment of the present invention.
Refer to Fig. 1, in the present embodiment, it is proposed that the preparation method of a kind of HRP resistance, including step:
S1: resistance body is provided；
S2: carry out the first ion implanting on described resistance body, the ionic type of the first ion implanting described includes B ion；
S3: forming photoresistance on described resistance body, described photoresistance exposes partial ohmic main body；
S4: carry out the second ion implanting on the resistance body exposed, the ionic type of described the second ion implanting includes O ion；
S5: described resistance body carries out rapid thermal anneal process process, forms HRP resistance.
Concrete, refer to Fig. 2, in step sl, resistance body 10 is crystalline silicon, and it can be monocrystal silicon or polysilicon, is doped it and can form the resistance that resistance is different.
In step s 2, as it is shown on figure 3, to carrying out the first ion implanting on resistance body 10, the first ion implanting described uses B or BF2, such that it is able to change the resistance of resistance body 10.In the application, mainly obtain different resistance values by injection different ions implantation concentration, such as, if desired for obtaining the high value device that HRP resistance is 1 kilohm, general injection ion concentration B or BF2For 8*1014cm-3；Same ion implantation concentration of working as is 2.7*1014cm-3Time, the HRP resistance obtained is about 3 kilohms.Concrete implantation concentration can determine according to different resistances, in this no limit.
Refer to Fig. 4, in step s3, form photoresistance 20 on described resistance body 10, described photoresistance 20 exposes partial ohmic main body 10, shelters from the part without carrying out the second ion implanting.Owing to resistance has several functions, some needs to change resistance, and some is without changing resistance, and photoresistance 20 therefore can be used in preparation process to block.
Refer to Fig. 5, in step s 4, carry out the second ion implanting on the resistance body 10 exposed, the ionic type of described the second ion implanting includes O ion；Described the second ion implanting can use O2。
After the second ion implanting completes, generally also needing to carry out rapid thermal annealing (RTA) PROCESS FOR TREATMENT, form HRP resistance, wherein, rapid thermal anneal process can activate the impurity of doping.The temperature range of described rapid thermal anneal process is 800 DEG C～1200 DEG C, and e.g. 1000 DEG C, annealing time scope is 1s～60min, e.g. 30s.
In the present embodiment, the degree of depth of described the second ion implanting is identical with the degree of depth of the first ion implanting described, is used for guaranteeing that O ion can react completely with B ion, is conducive to changing the resistance of HRP resistance.Furthermore it is preferred that, the concentration of described the second ion implanting is higher than the concentration 1 of the first ion implanting described～3 orders of magnitude, it is possible to the most effective change guarantees that O ion can react completely with B ion, is conducive to changing the resistance of HRP resistance.
Another aspect at the present embodiment, it is also proposed that a kind of method changing HRP resistance, for changing the resistance of HRP resistance, described HRP resistance uses the preparation method of HRP resistance to be as described above prepared from, including step:
If the resistance making described HRP resistance increases, then under predetermined light intensity, irradiate described HRP resistance；
If the resistance making described HRP resistance reduces, the most described HRP resistance is carried out heat treatment.
Concrete, HRP resistance can be made 1 hour～2 hours to irradiate when range of light intensity is AM1～AM2, such as, irradiate 1.5 hours when light intensity is AM1.5, such that it is able to promote B ion and O ionic reaction to produce BsO2iComplex, reduces the concentration of B ion, such that it is able to change the resistance of HRP resistance, makes the resistance of HRP resistance increase.
Contrary, if making the resistance of described HRP resistance reduce, then at temperature is 100 DEG C～250 DEG C, described HRP resistance is carried out heat treatment 0～20 hours, e.g. at temperature is 150 DEG C, HRP resistance is carried out heat treatment 10 hours, make the B of formationsO2iComplex decomposes, and discharges B ion, increases the concentration of B ion such that it is able to reduce the resistance of HRP resistance.
Visible, it is possible to changed the resistance of HRP resistance within the specific limits by said method, be conducive to application in the devices, it is achieved different functions.
To sum up, the preparation method of the HRP resistance provided in the embodiment of the present invention and change the method for its resistance, carries out the injection of the first ion B, carries out the injection of the second ion O the most again resistance body, owing to, under certain illumination condition, displacement B and gap O forms the B not interfering with resistancesO2iComplex, makes the carrier concentration of B reduce such that it is able to change the character of resistance, and then can change the resistance of HRP resistance, and, this preparation method is simple, is beneficial to produce.Further, in the method for the change HRP resistance of proposition, if making HRP resistance become big, it is only necessary to carry out the illumination of certain time and intensity；As HRP resistance need to be made to diminish, only heat treatment need to be carried out at a certain temperature.
Above are only the preferred embodiments of the present invention, the present invention is not played any restriction effect.Any person of ordinary skill in the field; in the range of without departing from technical scheme; the technical scheme that the invention discloses and technology contents are made the variations such as any type of equivalent or amendment; all belong to the content without departing from technical scheme, within still falling within protection scope of the present invention.
Claims (12)
1. the preparation method of a HRP resistance, it is characterised in that include step:
Resistance body is provided；
Carrying out the first ion implanting on described resistance body, the ionic type of the first ion implanting described includes B ion；
Forming photoresistance on described resistance body, described photoresistance exposes partial ohmic main body；
Carrying out the second ion implanting on the resistance body exposed, the ionic type of described the second ion implanting includes O ion；
Described resistance body is carried out rapid thermal anneal process process, forms HRP resistance.
2. the preparation method of HRP resistance as claimed in claim 1, it is characterised in that the first ion implanting described uses B or BF2。
3. the preparation method of HRP resistance as claimed in claim 1, it is characterised in that described the second ion implanting uses O2。
4. the preparation method of HRP resistance as claimed in claim 1, it is characterised in that the degree of depth of described the second ion implanting is identical with the degree of depth of the first ion implanting described.
5. the preparation method of HRP resistance as claimed in claim 4, it is characterised in that the concentration of described the second ion implanting is higher than the concentration 1 of the first ion implanting described～3 orders of magnitude.
6. the preparation method of HRP resistance as claimed in claim 1, it is characterised in that described resistance body is crystalline silicon.
7. the preparation method of HRP resistance as claimed in claim 1, it is characterised in that the temperature range of described rapid thermal anneal process is 800 DEG C～1200 DEG C, and annealing time scope is 1s～60min.
8. the method changing HRP resistance, for changing the resistance of HRP resistance, described HRP resistance uses the preparation method of the HRP resistance as according to any one of claim 1 to 7 to be prepared from, it is characterised in that include step:
If the resistance making described HRP resistance increases, then under predetermined light intensity, irradiate described HRP resistance；
If the resistance making described HRP resistance reduces, the most described HRP resistance is carried out heat treatment.
9. the method changing HRP resistance as claimed in claim 8, it is characterised in that described range of light intensity is AM1～AM2.
10. the method changing HRP resistance as claimed in claim 8, it is characterised in that described light application time scope is 1 hour～2 hours.
11. methods changing HRP resistance as claimed in claim 8, it is characterised in that described heat-treatment temperature range is 100 DEG C～250 DEG C.
12. methods changing HRP resistance as claimed in claim 8, it is characterised in that described heat treatment time scope is 0～20 hour.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582458A (en) * | 1978-12-18 | 1980-06-21 | Toshiba Corp | Preparation of semiconductor device |
| US4406051A (en) * | 1979-09-11 | 1983-09-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
| US20060255404A1 (en) * | 2003-10-24 | 2006-11-16 | Jung-Cheng Kao | Semiconductor resistance element and fabrication method thereof |
| CN101447417A (en) * | 2007-11-27 | 2009-06-03 | 上海华虹Nec电子有限公司 | Forming method of high-resistance polysilicon |
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2015
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582458A (en) * | 1978-12-18 | 1980-06-21 | Toshiba Corp | Preparation of semiconductor device |
| US4406051A (en) * | 1979-09-11 | 1983-09-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
| US20060255404A1 (en) * | 2003-10-24 | 2006-11-16 | Jung-Cheng Kao | Semiconductor resistance element and fabrication method thereof |
| CN101447417A (en) * | 2007-11-27 | 2009-06-03 | 上海华虹Nec电子有限公司 | Forming method of high-resistance polysilicon |
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