CN103956399B - Silicon solar cell backboard and manufacturing method thereof - Google Patents
Silicon solar cell backboard and manufacturing method thereof Download PDFInfo
- Publication number
- CN103956399B CN103956399B CN201410153100.8A CN201410153100A CN103956399B CN 103956399 B CN103956399 B CN 103956399B CN 201410153100 A CN201410153100 A CN 201410153100A CN 103956399 B CN103956399 B CN 103956399B
- Authority
- CN
- China
- Prior art keywords
- silicon
- solar cell
- titanium
- doped layer
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 85
- 239000010703 silicon Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000010936 titanium Substances 0.000 claims abstract description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 230000004927 fusion Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000005945 translocation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a silicon solar cell backboard and a manufacturing method of the silicon solar cell backboard. The silicon solar cell backboard comprises a silicon slice substrate and an aluminum coating, wherein the aluminum coating is printed on the silicon slice substrate; a titanium doped layer is arranged between the aluminum coating and the silicon slice substrate. The manufacturing method of the silicon solar cell backboard comprises the following steps that (a), the silicon slice substrate is provided; (b), titanium atoms are injected on the back surface of the silicon slice substrate in an ion-injection mode; (c), the silicon slice substrate is arranged in a laser rapid fusion system, and the titanium doped layer is formed on the back surface of the silicon slice substrate; (d), aluminum paste is printed on the back surface of the silicon slice substrate with the titanium doped layer, the back surface of the silicon slice substrate with the titanium doped layer is sintered, and then the aluminum coating covering the titanium doped layer is formed. According to the silicon solar cell backboard and the manufacturing method of the silicon solar cell backboard, the titanium within the appointed concentration is evenly doped on the back surface of the silicon slice substrate to form an infrared absorption layer, and therefore the absorption coefficient of a silicon solar cell on the infrared band is improved greatly, and the efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to a kind of solar module and preparation method thereof, particularly relate to a kind of silicon solar cell back plate
And preparation method thereof.
Background technology
The back surface field of existing silicon solar cell makes and commonly uses the method that aluminium paste sinters after a while in silicon chip back side printing.Mesh
Front technology comparative maturity, the advantage of aluminum back surface field embodies in the commodity production of silicon solar cell.Titanium elements is as one
Impurity element in silicon, recent studies have shown that when titanium elements content in silicon reaches finite concentration (more than mott phase transformation
Concentration) after, the impurity band of non-radiative recombination can be suppressed being formed in band band gap of silicon so that silicon to 1000nm～
Ultrared influx and translocation between 2000nm.The efficiency of ordinary silicon solaode is along with the maturation of technique at present, gradually becomes
Near and theoretical efficiency, efficiency has been difficult to increase substantially.And titanium elements is carried out the doping of silicon chip top and makes typical case's Intermediate Gray
The technology application of solaode is extremely difficult, is still within phase of basic research at present.Owing to infrared band has in silicon chip
The strongest penetration capacity, can penetrate to silicon chip back side top layer, therefore, it is necessary to provide a kind of silicon solar cell back plate and system thereof
Make method, introduce titanium doped layer, promote silicon solar cell efficiency.
Summary of the invention
The technical problem to be solved is to provide a kind of silicon solar cell back plate and preparation method thereof, it is possible to increase
Add the silicon solar cell absorption at infrared spectrum wave band, improve the photoelectric transformation efficiency of silicon solar cell, and simple in construction,
Application easy to spread.
The present invention solves that above-mentioned technical problem employed technical scheme comprise that a kind of silicon solar cell back plate of offer, bag
Including silicon wafer substrate and aluminum film, wherein, described aluminum film is printed in silicon wafer substrate, is provided with titanium and mixes between described aluminum film and silicon wafer substrate
Diamicton.
Above-mentioned silicon solar cell back plate, wherein, the thickness of described titanium doped layer is 10～30nm.
Above-mentioned silicon solar cell back plate, wherein, described silicon wafer substrate is p-type polysilicon sheet, described p-type polysilicon sheet
Thickness be 180 μm.
The present invention solves that above-mentioned technical problem also provides for the manufacture method of a kind of above-mentioned silicon solar cell back plate, its
In, comprise the steps: a) first to provide silicon wafer substrate；B) then note by the way of ion implanting at silicon wafer substrate back surface
Enter titanium atom；C) silicon wafer substrate is put in laser Flashmelt system again, form titanium doped layer at silicon wafer substrate back surface；d)
Finally the silicon wafer substrate back surface with titanium doped layer is carried out aluminium paste printing and sintering, forms the aluminum covered on titanium doped layer
Film.
The manufacture method of above-mentioned silicon solar cell back plate, wherein, the silicon wafer substrate in described step a) is p-type polycrystalline
Silicon chip, the thickness of described p-type polysilicon sheet is 180 μm, and electrical resistivity range is 1～3 Ω cm.
The manufacture method of above-mentioned silicon solar cell back plate, wherein, in described step b), the implantation dosage of titanium atom is
1016cm-2。
The manufacture method of above-mentioned silicon solar cell back plate, wherein, in described step c), lf annealing time is
10～20ns, the titanium doped maximum concentration in the titanium doped layer of formation is 5*1019cm-3～1*1020cm-3。
The manufacture method of above-mentioned silicon solar cell back plate, wherein, in described step d), sintering temperature is 800 DEG C, burns
The knot time is 20～40s.
The present invention contrasts prior art a following beneficial effect: silicon solar cell back plate that the present invention provides and system thereof
Make method, before silicon solar cell makes aluminum back surface field, at the titanium of silicon wafer substrate back surface layer Uniform Doped prescribed concentration scope
Element forms infrared absorption layer；After being adulterated by ion implantation, use lf to anneal, carry out aluminum back surface field the most again
Printing and sintering, thus the silicon solar cell absorptance to infrared band can be increased substantially, and then improve solar-electricity
The efficiency in pond.
Accompanying drawing explanation
Fig. 1 is silicon solar cell back plate Making programme schematic diagram of the present invention.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
The present invention provides a kind of silicon solar cell back plate, and including silicon wafer substrate and aluminum film, wherein, described aluminum film is printed on
In silicon wafer substrate, between described aluminum film and silicon wafer substrate, it is provided with titanium doped layer.The thickness of described titanium doped layer be preferably 10～
30nm；Described silicon wafer substrate can be p-type polysilicon sheet, and the thickness of described p-type polysilicon sheet is about 180 μm.
Fig. 1 is silicon solar cell back plate Making programme schematic diagram of the present invention.
Referring to Fig. 1, the manufacture method of the silicon solar cell back plate that the present invention provides is to use ion at silicon chip back side
The method Doped with Titanium element injected is to (about 5*10 after finite concentration19cm-3～1*1020cm-3), use lf short annealing
Process so that titanium elements keeps higher concentration distribution in narrower depth bounds in (10～30nm), to reach fully to draw
Enter the purpose of impurity band；Then high temperature Fast Sintering (about 40s) is carried out after silicon chip back side being carried out aluminium paste printing.So that
The silicon solar cell back surface field of preparation can increase the absorption of the infrared band readily penetrating through ordinary silicon solaode, thus improves
The efficiency of solaode.
Specifically comprise the following steps that
Step S1: first silicon wafer substrate is provided；The present embodiment preferred type polysilicon chip, thickness about 180 μm, electrical resistivity range
It is 1～3 Ω cm；
Step S2: then at polysilicon chip back surface Implanted Titanium atom by the way of ion implanting；Implantation dosage is about
1016cm-2
Step S3: being put into by polysilicon chip in laser Flashmelt system, the melting time controls within 20ns again, many
Crystal silicon chip back surface forms titanium doped layer, and the titanium doped maximum concentration in the titanium doped layer of formation is 5*1019cm-3～1*
1020cm-3；
Step S4: the polysilicon chip back surface adulterated finally carries out aluminium paste printing, sintering, sintering takes high temperature quick
The mode of sintering, at 800 DEG C, sintering time controls within 40s, forms the aluminum film covered on titanium doped layer.This solar-electricity
Other preparation process of pond sheet are identical with common polycrystalline silicon solar cell, and this is no longer going to repeat them.
Although the present invention discloses as above with preferred embodiment, so it is not limited to the present invention, any this area skill
Art personnel, without departing from the spirit and scope of the present invention, when making a little amendment and perfect, the therefore protection model of the present invention
Enclose when with being as the criterion that claims are defined.
Claims (3)
1. the manufacture method of a silicon solar cell back plate, it is characterised in that described silicon solar cell back plate includes silicon chip
Substrate and aluminum film, described aluminum film is printed in silicon wafer substrate, is provided with titanium doped layer, described titanium between described aluminum film and silicon wafer substrate
The thickness of doped layer is 10～30nm；Described manufacture method comprises the steps:
A) silicon wafer substrate is first provided；
B) then at silicon wafer substrate back surface Implanted Titanium atom by the way of ion implanting；
C) silicon wafer substrate is put in laser Flashmelt system again, form titanium doped layer at silicon wafer substrate back surface；
D) finally the silicon wafer substrate back surface with titanium doped layer is carried out aluminium paste printing and sintering, formed and cover at titanium doped layer
On aluminum film；
In described step c), lf annealing time is 10～20ns, and the titanium doped maximum concentration in the titanium doped layer of formation is
5*1019cm-3～1*1020cm-3；
In described step d), sintering temperature is 800 DEG C, and sintering time is 20～40s.
2. the manufacture method of silicon solar cell back plate as claimed in claim 1, it is characterised in that the silicon in described step a)
Plate base is p-type polysilicon sheet, and the thickness of described p-type polysilicon sheet is 180 μm, and electrical resistivity range is 1～3 Ω cm.
3. the manufacture method of silicon solar cell back plate as claimed in claim 1, it is characterised in that in described step b), titanium is former
The implantation dosage of son is 1016cm-2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153100.8A CN103956399B (en) | 2014-04-16 | 2014-04-16 | Silicon solar cell backboard and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153100.8A CN103956399B (en) | 2014-04-16 | 2014-04-16 | Silicon solar cell backboard and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103956399A CN103956399A (en) | 2014-07-30 |
| CN103956399B true CN103956399B (en) | 2017-01-11 |
Family
ID=51333649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410153100.8A Active CN103956399B (en) | 2014-04-16 | 2014-04-16 | Silicon solar cell backboard and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103956399B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289893A (en) * | 2020-12-15 | 2021-01-29 | 杭州旭菱光伏电力科技有限公司 | Efficient solar panel manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| CN102191563B (en) * | 2011-04-22 | 2012-09-19 | 中国科学院半导体研究所 | Preparation method of codoped silicon-base impurity intermediate belt material |
| CN102496638A (en) * | 2011-11-28 | 2012-06-13 | 中国科学院半导体研究所 | Deep-level impurity-doped crystalline silicon infrared detector and preparation method thereof |
-
2014
- 2014-04-16 CN CN201410153100.8A patent/CN103956399B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103956399A (en) | 2014-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tao et al. | Large area tunnel oxide passivated rear contact n‐type Si solar cells with 21.2% efficiency | |
| CN103650170B (en) | Process for treating a heterojunction photovoltaic cell | |
| Gu et al. | Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high efficiency and low cost silicon solar cells | |
| CN103966665B (en) | One mixes gallium polycrystal silicon ingot and preparation method thereof | |
| CN101176194B (en) | Semiconductor device and method for manufacturing same | |
| MX2016006973A (en) | Solar cell emitter region fabrication using ion implantation. | |
| WO2010009297A3 (en) | Hybrid heterojunction solar cell fabrication using a doping layer mask | |
| CN103715308A (en) | Low-temperature varying temperature diffusion technology of polycrystalline silicon solar cell | |
| WO2012027000A3 (en) | Back junction solar cell with selective front surface field | |
| TW201029056A (en) | Method for producing a dopant profile | |
| EP2345062A1 (en) | Methods of forming multi-doped junctions on a substrate | |
| EP2602835A3 (en) | Solar cell and method for forming solar cell emitter comprising pre-amorphization and ion implantation | |
| PH12016501055B1 (en) | Solar cell emitter region fabrication using self-aligned implant and cap | |
| CN105374664A (en) | Preparation method of InP film composite substrate | |
| EP3190628B1 (en) | Solar cell and manufacturing method of solar cell | |
| Yadav et al. | c-Si solar cells formed from spin-on phosphoric acid and boric acid | |
| CN103035745B (en) | The current regulator diode adopting cutting technique to be formed and manufacture method thereof | |
| CN103956399B (en) | Silicon solar cell backboard and manufacturing method thereof | |
| TWI587539B (en) | Manufacturing method of substrate for solar cell | |
| CN102569532A (en) | Secondary deposition and dispersion process for selective emitter battery | |
| CN106340567A (en) | Two-step source opening process applied to solar energy cell for improving opening voltage | |
| CN103178157B (en) | Method for manufacturing polycrystalline silicon solar cells with selective emitters | |
| TW201440235A (en) | Back junction solar cell with enhanced emitter layer | |
| CN103730541B (en) | Solar cell nanometer emitter stage and preparation method thereof | |
| Zhong et al. | Mass production of high efficiency selective emitter crystalline silicon solar cells employing phosphorus ink technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |