CN105826163B - The preparation method of HRP resistance and the method for changing its resistance value - Google Patents
The preparation method of HRP resistance and the method for changing its resistance value Download PDFInfo
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- CN105826163B CN105826163B CN201510007133.6A CN201510007133A CN105826163B CN 105826163 B CN105826163 B CN 105826163B CN 201510007133 A CN201510007133 A CN 201510007133A CN 105826163 B CN105826163 B CN 105826163B
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Abstract
The invention proposes a kind of preparation method of HRP resistance and change the method for its resistance value, the injection of the first ion B is carried out to resistance body, then the injection for carrying out second of ion O again, since under certain illumination condition, displacement B and gap O form the B that will not influence resistance valuesO2iComplex reduces the carrier concentration of B so as to change the property of resistance, and then can change the resistance value of HRP resistance, also, should preparation method is simple, be conducive to production.Further, in the method for the change HRP resistance of proposition, if HRP resistance is made to become larger, it is only necessary to carry out the illumination of certain time and intensity；If you need to make HRP resistance become smaller, need to be only heat-treated at a certain temperature.
Description
Technical field
The present invention relates to the preparation method of field of semiconductor manufacture more particularly to a kind of HRP resistance and change its resistance value
Method.
Background technique
In the manufacturing process of semiconductor chip, in order to realize certain functions of device, it will usually make one in the chips
A little high value devices, such as HRP (High Resistance Poly, high-resistance polysilicon) resistance.HRP resistance in the prior art
Common preparation method include following several:
Method one: the first ion implanting IMP1 (note is directly carried out at the undoped crystalline silicon specific region of formation
The ion entered such as B or BF2), the concentration by adjusting injection ion changes the resistance value of crystalline silicon, to reach required resistor
Part；
Method two: a part of region on undoped crystalline silicon carries out the first ion implanting IMP1, then passes through HRP
Illumination step, another part region carry out second of ion implanting IMP2, the ionic type of second of ion implanting IMP2
It is consistent with the ionic type of the first ion implanting IMP1, but there are difference for the ion concentration injected, and can equally pass through adjusting；
Method three: a part equally on undoped crystalline silicon carries out the first ion implanting IMP1；Pass through HRP again
Illumination step carries out second of ion implanting IMP2 in another part region, unlike second ion implanting IMP2 from
Subtype is opposite with the ionic type of the first ion implanting IMP1, therefore, to assure that be injection ion concentration exist it is certain poor
Not, avoiding the two is non-full remuneration.
However, preparing the HRP resistance to be formed using the above method once completing, resistance value will be fixed, in certain property
Energy aspect lacks controllability, i.e., the application conditions of this fixed high value device are more single and stringent, for some differences
Resistance value may be implemented for the device of different function, the device of the fixed HRP resistance of this resistance value is just difficult to so as to utilizing, and
It is a kind of can simply adjust resistance device value can emerge from.
It is, therefore, desirable to provide a kind of adjustable HRP resistance of resistance value, to meet the different function of device.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of HRP resistance and change the method for its resistance value, prepares
HRP resistance can accurately change in a certain range, device can be made to meet different function.
To achieve the goals above, the invention proposes a kind of preparation methods of HRP resistance, comprising steps of
Resistance body is provided；
The first ion implanting is carried out on the resistance body, the ionic type of the first ion implanting includes B
Ion；
Photoresist is formed on the resistance body, the photoresist exposes partial ohmic main body；
Second of ion implanting, the ionic type packet of second of ion implanting are carried out on the resistance body exposed
Include O ion；
Rapid thermal anneal process processing is carried out to the resistance body, forms HRP resistance.
Further, in the preparation method of the HRP resistance, the first described ion implanting uses B or BF2。
Further, in the preparation method of the HRP resistance, second of ion implanting uses O2。
Further, in the preparation method of the HRP resistance, the depth of second of ion implanting and described the
A kind of depth of ion implanting is identical.
Further, in the preparation method of the HRP resistance, the concentration of second of ion implanting is higher than described
1~3 order of magnitude of concentration of the first ion implanting.
Further, in the preparation method of the HRP resistance, the resistance body is crystalline silicon.
Further, in the preparation method of the HRP resistance, the temperature range of the rapid thermal anneal process is
800 DEG C~1200 DEG C, annealing time range is 1s~60min.
It is described for changing the resistance value of HRP resistance the invention also provides a kind of method for changing HRP resistance
HRP resistance uses the preparation method such as described in any item HRP resistance above to be prepared, comprising steps of
If increasing the resistance value of the HRP resistance, the HRP resistance is irradiated under predetermined light intensity；
If reducing the resistance value of the HRP resistance, the HRP resistance is heat-treated at a predetermined temperature.
Further, in the method for the change HRP resistance, the range of light intensity is AM1~AM2.
Further, in the method for the change HRP resistance, the light application time range is 1 hour~2 small
When.
Further, in the method for the described change HRP resistance, the heat-treatment temperature range is 100 DEG C~
250℃。
Further, in the method for the change HRP resistance, the heat treatment time range is 0~20 small
When.
Compared with prior art, the beneficial effects are mainly reflected as follows: the first ion B's is carried out to resistance body
Injection, then carries out the injection of second of ion O again, since under certain illumination condition, displacement B and gap O formation will not shadows
Ring the B of resistance valuesO2iComplex reduces the carrier concentration of B so as to change the property of resistance, and then can change HRP
The resistance value of resistance, also, should preparation method is simple, be conducive to production.
Further, in the method for the change HRP resistance of proposition, if HRP resistance is made to become larger, it is only necessary to carry out one
The illumination fixed time with intensity；If you need to make HRP resistance become smaller, need to be only heat-treated at a certain temperature.
Detailed description of the invention
Fig. 1 is the flow chart of the preparation method of HRP resistance in one embodiment of the invention；
Fig. 2 to Fig. 5 is the diagrammatic cross-section in one embodiment of the invention in HRP resistance preparation process.
Specific embodiment
Below in conjunction with schematic diagram to the preparation method of HRP resistance of the invention and change its resistance value method carry out it is more detailed
Thin description, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify and be described herein
The present invention, and still realize advantageous effects of the invention.Therefore, following description should be understood as those skilled in the art
Member's is widely known, and is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail well known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related business
Limitation, changes into another embodiment by one embodiment.Additionally, it should think that this development may be complicated and expend
Time, but to those skilled in the art it is only routine work.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Referring to FIG. 1, in the present embodiment, a kind of preparation method of HRP resistance is proposed, comprising steps of
S1: resistance body is provided；
S2: the first ion implanting, the ionic type packet of the first ion implanting are carried out on the resistance body
Include B ion；
S3: forming photoresist on the resistance body, and the photoresist exposes partial ohmic main body；
S4: second of ion implanting, the ionic species of second of ion implanting are carried out on the resistance body exposed
Type includes O ion；
S5: rapid thermal anneal process processing is carried out to the resistance body, forms HRP resistance.
Specifically, referring to FIG. 2, in step sl, it can be monocrystalline silicon or polycrystalline that resistance body 10, which is crystalline silicon,
Silicon, the different resistance of resistance value can be formed by being doped to it.
In step s 2, as shown in figure 3, to the first ion implanting, the first described ion is carried out on resistance body 10
Injection uses B or BF2, so as to change the resistance value of resistance body 10.In the application, mainly pass through injection different ions
Implantation concentration obtains different resistance values, for example, such as need to obtain the high value device that HRP resistance is 1 kilohm, one
As inject ion concentration B or BF2For 8*1014cm-3；Equally when ion implantation concentration is 2.7*1014cm-3When, obtained HRP is electric
Hindering resistance value is about 3 kilohms.Specific implantation concentration can be determined according to different resistances, be not limited thereto.
Referring to FIG. 4, in step s3, forming photoresist 20 on the resistance body 10, the photoresist 20 exposes portion
Sub-resistance main body 10 shelters from the part without carrying out second of ion implanting.Since resistance has multiple functions, some needs
Change resistance value, and some are without changing resistance value, therefore can be blocked during the preparation process using photoresist 20.
Referring to FIG. 5, in step s 4, second of ion implanting is carried out on the resistance body 10 exposed, described
The ionic type of two kinds of ion implantings includes O ion；Second of ion implanting can use O2。
It after second of ion implanting is completed, usually also needs to carry out rapid thermal annealing (RTA) process, is formed
HRP resistance, wherein rapid thermal anneal process can activate the impurity of doping.The temperature range of the rapid thermal anneal process is
800 DEG C~1200 DEG C, e.g. 1000 DEG C, annealing time range is 1s~60min, e.g. 30s.
In the present embodiment, the depth of second of ion implanting is identical as the depth of the first ion implanting,
For ensuring that O ion can react completely with B ion, be conducive to the resistance value for changing HRP resistance.Furthermore it is preferred that, described second
The concentration of kind ion implanting is higher than 1~3 order of magnitude of concentration of the first ion implanting, further can effectively change
Ensure that O ion can react completely with B ion, is conducive to the resistance value for changing HRP resistance.
In the another aspect of the present embodiment, it is also proposed that a method of change HRP resistance, for changing HRP electricity
The resistance value of resistance, the HRP resistance are prepared using the preparation method of HRP resistance as described above, comprising steps of
If increasing the resistance value of the HRP resistance, the HRP resistance is irradiated under predetermined light intensity；
If reducing the resistance value of the HRP resistance, the HRP resistance is heat-treated at a predetermined temperature.
Specifically, HRP resistance can be made to irradiate when range of light intensity is AM1~AM2 1 hour~2 hours, such as in light intensity
To be irradiated 1.5 hours when AM1.5, so as to promote B ion and O ionic reaction to generate BsO2iComplex reduces the dense of B ion
Degree, so as to change the resistance value of HRP resistance, increases the resistance value of HRP resistance.
Opposite, if reducing the resistance value of the HRP resistance, to the HRP electricity at being 100 DEG C~250 DEG C in temperature
Resistance carries out heat treatment 0~20 hour, carries out 10 hours of heat treatment to HRP resistance at being e.g. 150 DEG C in temperature, makes to be formed
BsO2iComplex decomposes, and releases B ion, increases the concentration of B ion, so as to reduce the resistance value of HRP resistance.
As it can be seen that the resistance value of HRP resistance can be changed in a certain range by the above method, be conducive to apply in device
In, realize different functions.
To sum up, in the preparation method of HRP resistance provided in an embodiment of the present invention and the method for changing its resistance value, to resistance
Main body carries out the injection of the first ion B, then carries out the injection of second of ion O again, due to replacing under certain illumination condition
Position B and gap O forms the B that will not influence resistance valuesO2iComplex reduces the carrier concentration of B so as to change resistance
Property, and then can change the resistance value of HRP resistance, also, should preparation method is simple, be conducive to production.Further, it proposes
Change HRP resistance method in, if HRP resistance is made to become larger, it is only necessary to carry out the illumination of certain time and intensity i.e.
It can；If you need to make HRP resistance become smaller, need to be only heat-treated at a certain temperature.
The above is only a preferred embodiment of the present invention, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical solution of the present invention, to the invention discloses technical solution and
Technology contents make the variation such as any type of equivalent replacement or modification, belong to the content without departing from technical solution of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (11)
1. a kind of method for changing HRP resistance, for changing the resistance value of HRP resistance, which is characterized in that comprising steps of
HRP resistance is provided, the preparation method of the HRP resistance includes: offer resistance body；Is carried out on the resistance body
A kind of ion implanting, the ionic type of the first ion implanting include B ion；Photoresist is formed on the resistance body,
The photoresist exposes partial ohmic main body；Carry out second of ion implanting on the resistance body exposed, described second
The ionic type of ion implanting includes O ion；Rapid thermal anneal process processing is carried out to the resistance body, forms HRP resistance；
If increasing the resistance value of the HRP resistance, the HRP resistance is irradiated under predetermined light intensity；
If reducing the resistance value of the HRP resistance, the HRP resistance is heat-treated at a predetermined temperature.
2. changing the method for HRP resistance as described in claim 1, which is characterized in that the first described ion implanting is adopted
With B or BF2。
3. changing the method for HRP resistance as described in claim 1, which is characterized in that second of ion implanting is adopted
Use O2。
4. changing the method for HRP resistance as described in claim 1, which is characterized in that second of ion implanting
Depth is identical as the depth of the first ion implanting.
5. changing the method for HRP resistance as claimed in claim 4, which is characterized in that second of ion implanting
Concentration is higher than 1~3 order of magnitude of concentration of the first ion implanting.
6. changing the method for HRP resistance as described in claim 1, which is characterized in that the resistance body is crystalline silicon.
7. changing the method for HRP resistance as described in claim 1, which is characterized in that the rapid thermal anneal process
Temperature range is 800 DEG C~1200 DEG C, and annealing time range is 1s~60min.
8. as described in claim 1 change HRP resistance method, which is characterized in that the range of light intensity be AM1~
AM2。
9. changing the method for HRP resistance as described in claim 1, which is characterized in that the time of HRP resistance described in illumination
Range is 1 hour~2 hours.
10. changing the method for HRP resistance as described in claim 1, which is characterized in that the heat-treatment temperature range is
100 DEG C~250 DEG C.
11. changing the method for HRP resistance as described in claim 1, which is characterized in that the heat treatment time range is
0~20 hour.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4406051A (en) * | 1979-09-11 | 1983-09-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
| CN101447417A (en) * | 2007-11-27 | 2009-06-03 | 上海华虹Nec电子有限公司 | Forming method of high-resistance polysilicon |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582458A (en) * | 1978-12-18 | 1980-06-21 | Toshiba Corp | Preparation of semiconductor device |
| CN100372028C (en) * | 2003-10-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | Semiconductor resistance element and producing method thereof |
-
2015
- 2015-01-07 CN CN201510007133.6A patent/CN105826163B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4406051A (en) * | 1979-09-11 | 1983-09-27 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device |
| CN101447417A (en) * | 2007-11-27 | 2009-06-03 | 上海华虹Nec电子有限公司 | Forming method of high-resistance polysilicon |
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