CN106158604B - A kind of phosphorus diffusion method - Google Patents
A kind of phosphorus diffusion method Download PDFInfo
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- CN106158604B CN106158604B CN201510162493.3A CN201510162493A CN106158604B CN 106158604 B CN106158604 B CN 106158604B CN 201510162493 A CN201510162493 A CN 201510162493A CN 106158604 B CN106158604 B CN 106158604B
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Abstract
The invention discloses a kind of phosphorus diffusion methods, are used for PN knot, the steps include: to provide silicon wafer in the big nitrogen in diffusion furnace, being passed through 20ml/min, are warming up to 950 degrees Celsius；It is passed through into diffusion furnace and takes phosphorus oxychloride gas and oxygen point six section of three period and be diffused technique, spread 30 minutes；Phosphorus oxychloride gas and oxygen is taken in closing, in the atmosphere of big nitrogen, reduces diffusion furnace temperature to 800 degrees Celsius, heat preservation is promoted for 10 minutes；Finally cool down boat out, takes out silicon wafer.Phosphorus gettering when can improve diffusion using phosphorus diffusion method of the invention improves the uniformity of phosphorus doping area square resistance, and cost is not high, can be completed with existing equipment.
Description
Technical field
The present invention relates to a kind of phosphorus diffusion methods, belong to semiconductor doping knot field.
Background technique
Semiconductor material has corresponding forbidden bandwidth, and semiconductor material, especially silicon materials are current IC, IT, the sun
The basis of energy industry.Make the utilization of semiconductor material acquisition functionally, basis is exactly to form PN junction.The performance of PN junction is half
The basis of conductor device, currently, being to form PN junction by doping techniques.Phosphorus is a kind of V group element, is common n-type doping
Element.With advances in technology, increasingly higher demands are proposed to doping techniques, for example, requirement to cost, to doped region
The requirement of square resistance uniformity, especially solar energy industry require very the cost and resistance homogeneity in phosphorus doping region
Height, while to avoid the dead layer phenomenon of doping surfaces because these parameters have to open-circuit voltage, the short circuit current of product it is important
It influences.
Existing phosphorus doping technology is often phosphorus diffusion into the surface technology, such as the nitrogen between 700-900 degrees Celsius of temperature
During atmosphere is enclosed, it is passed through phosphorus oxychloride gas, completes preliminary diffusion；Knot technique completion surface doping is being carried out later, however, this
Often not enough uniformly, phosphorus gettering is not ideal enough for the doped region square resistance that kind phosphoric diffusion technology obtains.
Summary of the invention
The deficiency of the present invention in view of the above technical problems invents a kind of phosphoric diffusion technology on the basis of many experiments.It should
Phosphorus gettering when technique can improve diffusion improves the uniformity of phosphorus doping area square resistance, and cost is not high, is set with existing
It is standby to complete.
Technical solution provided by the invention is a kind of phosphorus diffusion method, specific steps are as follows:
(1) silicon wafer is provided, silicon wafer is placed in quartz boat, by quartz boat fixed in position in the furnace in diffusion furnace, closing diffusion furnace
Door；
(2) big nitrogen, nitrogen flow 20ml/min are passed through into diffusion furnace；It is started to warm up after being passed through 10min, and will be in furnace
Temperature is warming up to 950-1050 degrees Celsius, later constant temperature；
(3) it then is diffused technique, specifically: it is segmented to be passed through into diffusion furnace and takes phosphorus oxychloride gas and oxygen；
(4) diffusion technique is completed, stopping, which is passed through, takes phosphorus oxychloride gas and oxygen, in big nitrogen atmosphere, by in-furnace temperature
It is reduced to 750-800 degrees Celsius, and keeps the temperature and promotes 10min；
(5) cool down boat out, takes silicon wafer.
Wherein, diffusion technique can be with specifically: is passed through and takes phosphorus oxychloride gas and oxygen and be diffused technique, diffusion is total
Time is 30min；In the entire diffusion technique, the flow of oxygen is always the gas flow of 2L/min；From the diffusion
Technique starts timing, and flow is passed through in 0-5min as 15L/min and takes phosphorus oxychloride gas, is passed through flow in 5-10min later
Phosphorus oxychloride gas is taken for 5L/min, flow is passed through in 10-15min later as 15L/min and takes phosphorus oxychloride gas, later
It is passed through flow in 15-20min and takes phosphorus oxychloride gas for 5L/min, being passed through flow in 20-25min later is 15L/min's
Phosphorus oxychloride gas is taken, flow is passed through in last 25-30min as 5L/min and takes phosphorus oxychloride gas.
Wherein, silicon wafer can be monocrystalline or polysilicon chip, having a size of 4 inches, 8 inches or 12 inches.
Detailed description of the invention
Gas is passed through situation in Fig. 1 diffusion process.
Specific embodiment
The present invention is described in detail below in conjunction with specific embodiment.Although note that it is only by the invention one
Kind specific embodiment, is not whole of the invention.The present invention is not limited to following implementation.
Embodiment 1
Silicon wafer is provided, which can be monocrystalline silicon piece at high cost and be also possible to polysilicon chip at low cost, size
It can choose according to production needs, be that equipment is wanted to allow, 4 inches, 8 inches, 12 inches etc. can be with.Silicon wafer is placed in quartz boat
It is interior, by quartz boat fixed in position in diffusion furnace.Close the fire door of diffusion furnace.
Big nitrogen, nitrogen flow 20ml/min are passed through into diffusion furnace；It is started to warm up after being passed through 10min, and will be warm in furnace
Degree is warming up to 950 degrees Celsius, later constant temperature.
Then it is diffused technique, specifically: it is passed through into diffusion furnace and takes phosphorus oxychloride gas and oxygen, phosphorus oxychloride liquid
Body source temperature is 20 degrees Celsius；With reference to Fig. 1, in entire diffusion technique, the flow of oxygen is always the gas flow of 2L/min；
And the flow for taking phosphorus oxychloride gas be not it is constant, control in segmented fashion, specifically divide 6 sections, totally 3 week
Phase, every section of duration are 5 minutes.Start timing since diffusion, flow is passed through in 0-5min as 15L/min and takes phosphorus oxychloride
Gas is passed through flow later as 5L/min and takes phosphorus oxychloride gas in 5-10min, being passed through flow in 10-15min later is
15L/min's takes phosphorus oxychloride gas, flow is passed through in 15-20min later as 5L/min and takes phosphorus oxychloride gas, later
It is passed through flow in 20-25min and takes phosphorus oxychloride gas for 15L/min, it is 5L/min's that flow is passed through in last 25-30min
Take phosphorus oxychloride gas.
Diffusion technique is completed, stopping, which is passed through, takes phosphorus oxychloride gas and oxygen, and in big nitrogen atmosphere, in-furnace temperature is reduced
To 800 degrees Celsius, and keeps the temperature and promote 10min.
Cool down boat out, takes silicon wafer.
Embodiment 2
Silicon wafer is provided, silicon wafer is placed in quartz boat, by quartz boat fixed in position in diffusion furnace.Close the furnace of diffusion furnace
Door.
Big nitrogen, nitrogen flow 20ml/min are passed through into diffusion furnace；It is started to warm up after being passed through 10min, and will be warm in furnace
Degree is warming up to 1000 degrees Celsius, later constant temperature.
Then it is passed through into diffusion furnace and takes phosphorus oxychloride gas and oxygen and be diffused technique.Wherein, phosphorus oxychloride liquid
Source temperature is 20 degrees Celsius, and in entire diffusion technique, the flow of oxygen is always the gas flow of 2L/min；Take phosphorus oxychloride
Gas is passed through mode are as follows: the timing since the diffusion technique, it is that 15L/min takes phosphorus oxychloride that flow is passed through in 0-5min
Gas is passed through flow later as 5L/min and takes phosphorus oxychloride gas in 5-10min, being passed through flow in 10-15min later is
15L/min's takes phosphorus oxychloride gas, flow is passed through in 15-20min later as 5L/min and takes phosphorus oxychloride gas, later
It is passed through flow in 20-25min and takes phosphorus oxychloride gas for 15L/min, it is 5L/min's that flow is passed through in last 25-30min
Take phosphorus oxychloride gas.
Diffusion technique is completed, stopping, which is passed through, takes phosphorus oxychloride gas and oxygen, and in big nitrogen atmosphere, in-furnace temperature is reduced
To 750 degrees Celsius, and keeps the temperature and promote 10min.
Cool down boat out, takes silicon wafer.
It is described in detail above based on two embodiments of the invention, below by the note of the phosphorus diffusion method to this technique
Meaning point carries out some explanations:
In diffusion technique, the mode of the logical phosphorus source gas of the similar pulsed in points of 6 sections 3 periods is taken, is formed
Effect be that similar pulse phosphorus impurities distribution is formed in silicon chip surface.Since every time only has 5 minutes, in order at 5 points
Embodied in clock phosphorus impurities in silicon chip surface distribution effect, it is necessary to improve diffusion temperature to 950 degrees Celsius or more than
It is some.In addition, always high phosphorus source gas is followed by a low-phosphorous source gas in 6 sections of diffusions, as a comparison case, if its sequence handed over
Be changed to first lead to low-phosphorous source gas be followed by high phosphorus source gas, then last effect is ideal without the former, in experimental data, the latter's
Square resistance deviates under different depth up to 20% or more, and the former is within 10%, wherein reason may with spread for the first time
When silicon chip surface have some oxidations impurity it is related, for the first time diffusion select high flow capacity can offset these unfavorable factors.Due to
Using the diffusion way in 6 sections of 3 periods, in promoting technique, need for the temperature in furnace to be reduced to 800 degrees Celsius or with
Under, distributing equilibrium of the concentration of phosphorus impurities in silicon chip surface in progradation improves the uniformity of square resistance.Therefore,
Design through the invention, phosphorus gettering when can improve diffusion improve the uniformity of phosphorus doping area square resistance, and cost is not
Height can be completed with existing equipment.
Claims (3)
1. a kind of phosphorus diffusion method, including specific steps:
(1) silicon wafer is provided, silicon wafer is placed in quartz boat, by quartz boat fixed in position in the furnace in diffusion furnace, closing diffusion furnace
Door；
(2) big nitrogen, nitrogen flow 20ml/min are passed through into diffusion furnace；It is started to warm up after being passed through 10min, and by in-furnace temperature
It is warming up to 950-1050 degrees Celsius, later constant temperature；
(3) it is passed through and takes phosphorus oxychloride gas and oxygen and be diffused technique, diffusion total time is 30min；
(4) diffusion technique is completed, stopping, which is passed through, takes phosphorus oxychloride gas and oxygen, and in big nitrogen atmosphere, in-furnace temperature is reduced
To 750-800 degrees Celsius, and keeps the temperature and promote 10min；
(5) cool down boat out, takes silicon wafer；
It is characterized by: the diffusion technique specifically: in the entire diffusion technique, the flow of oxygen is always 2L/min
Gas flow；The timing since the diffusion technique, it is that 15L/min takes phosphorus oxychloride gas that flow is passed through in 0-5min,
Flow is passed through in 5-10min later and takes phosphorus oxychloride gas for 5L/min, being passed through flow in 10-15min later is 15L/min
Take phosphorus oxychloride gas, it is that 5L/min takes phosphorus oxychloride gas that flow is later passed through in 15-20min, later 20-25min
It is inside passed through flow and takes phosphorus oxychloride gas for 15L/min, flow is passed through in last 25-30min as 5L/min and takes trichlorine oxygen
Phosphorus gas.
2. phosphorus diffusion method as described in claim 1, wherein the silicon wafer is monocrystalline silicon piece.
3. such as phosphorus diffusion method claimed in claims 1-2, wherein the silicon wafer is 4 inches, 8 inches or 12 inch silicon wafers.
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| CN201510162493.3A CN106158604B (en) | 2015-04-08 | 2015-04-08 | A kind of phosphorus diffusion method |
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| CN201510162493.3A CN106158604B (en) | 2015-04-08 | 2015-04-08 | A kind of phosphorus diffusion method |
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| CN106158604B true CN106158604B (en) | 2019-06-14 |
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| CN107475775A (en) * | 2017-08-14 | 2017-12-15 | 通威太阳能（安徽）有限公司 | A kind of quartz boat contacts PN junction abnormal improvement technique in position with silicon chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419997A (en) * | 2008-11-28 | 2009-04-29 | 宁波尤利卡太阳能科技发展有限公司 | Producing method for crystalline silicon solar cell PN junction |
| CN102769069A (en) * | 2012-07-16 | 2012-11-07 | 苏州阿特斯阳光电力科技有限公司 | Boron diffusion method of crystalline silicon solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7179696B2 (en) * | 2004-09-17 | 2007-02-20 | Texas Instruments Incorporated | Phosphorus activated NMOS using SiC process |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101419997A (en) * | 2008-11-28 | 2009-04-29 | 宁波尤利卡太阳能科技发展有限公司 | Producing method for crystalline silicon solar cell PN junction |
| CN102769069A (en) * | 2012-07-16 | 2012-11-07 | 苏州阿特斯阳光电力科技有限公司 | Boron diffusion method of crystalline silicon solar cell |
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