JPS5536976A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5536976A JPS5536976A JP11015778A JP11015778A JPS5536976A JP S5536976 A JPS5536976 A JP S5536976A JP 11015778 A JP11015778 A JP 11015778A JP 11015778 A JP11015778 A JP 11015778A JP S5536976 A JPS5536976 A JP S5536976A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrodes
- oxide layer
- deposited
- gate oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE: To get stable and high speed operative device by providing first transmission electrodes difinitly spaced on semiconductor substrate through gate oxide layer and covering whole surface with oxide layer by oxidation of polycrystal Si and positioning it between the first electrodes to form second transmission electrodes.
CONSTITUTION: Oxide layer 12 is deposited on N-type Si substrate and P-type areas 13 and 14 are formed on both ends of the substrate 11 by ion injection and the layer 12 therebetween is removed and then a thin first gate oxide layer 15 is deposited newly. Then difinitly spaced first transmission electrodes 16 consisting of metal having high melting point such as Mo or W are formed and polycristal Si layer 20 is deposited on whole surface. Then the layer 20 is transformed fully into SiO2 layer by heating under damp oxygen atomosphere to form a second gate oxide layer 17 and Al second electrodes 18 are formed in positioning between the elctrodes 16 on the layer 17 and electrodes 19 are formed on the areas 13 and 14. Thus, it is possible to form an electrode of low resistant and stabilize CCD charactristics.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11015778A JPS5536976A (en) | 1978-09-05 | 1978-09-05 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11015778A JPS5536976A (en) | 1978-09-05 | 1978-09-05 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5536976A true JPS5536976A (en) | 1980-03-14 |
JPS6120153B2 JPS6120153B2 (en) | 1986-05-21 |
Family
ID=14528489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11015778A Granted JPS5536976A (en) | 1978-09-05 | 1978-09-05 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5536976A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5749270A (en) * | 1980-09-09 | 1982-03-23 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61196575A (en) * | 1985-02-25 | 1986-08-30 | Sony Tektronix Corp | Single phase charge coupled device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5389374A (en) * | 1977-01-18 | 1978-08-05 | Toshiba Corp | Production of semiconductor device |
-
1978
- 1978-09-05 JP JP11015778A patent/JPS5536976A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5389374A (en) * | 1977-01-18 | 1978-08-05 | Toshiba Corp | Production of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5749270A (en) * | 1980-09-09 | 1982-03-23 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS61196575A (en) * | 1985-02-25 | 1986-08-30 | Sony Tektronix Corp | Single phase charge coupled device |
Also Published As
Publication number | Publication date |
---|---|
JPS6120153B2 (en) | 1986-05-21 |
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