JPS5482175A - Field effect transistor and its manufacture - Google Patents
Field effect transistor and its manufactureInfo
- Publication number
- JPS5482175A JPS5482175A JP15001977A JP15001977A JPS5482175A JP S5482175 A JPS5482175 A JP S5482175A JP 15001977 A JP15001977 A JP 15001977A JP 15001977 A JP15001977 A JP 15001977A JP S5482175 A JPS5482175 A JP S5482175A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- film
- window
- type impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form a miniature FET by providing the sufficiently small P-layer on the N-layer and then leading the P-layer out by the poly Si layer to be connected to the electrode.
CONSTITUTION: Lamination layer 28 of SiO2 and Si3N4 and poly Si26 are laminated on N-layer 2 on the N+Si substrate with opening 27 and 25 provided. Then poly Si29 containing the P-type impurity is formed, and film 29 is removed through the ion etching. Window 31 of film 32 plus window 33 at remaining part 34 of film 29 are drilled opposing to window 26 of film 26. Then poly Si film 36 is formed into the desired shape and then given the wet-type oxidation to form SiO240 and 42 plus poly Si41. In this instant, P-layer 3 is formed via the P-type impurity contained in layer 41. Thin film 42 is removed and poly Si13 containing the N-type impurity is extended over layer 40, and N+-layer 4 is formed through the heat treatment. Then metal electrode 8 and 9 are formed on layer 40 and 13. In this way, the junction capacity becomes small enough between layer 2 and 3, thus forming a miniature FET for the high-speed use.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52150019A JPS5852352B2 (en) | 1977-12-14 | 1977-12-14 | Manufacturing method of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52150019A JPS5852352B2 (en) | 1977-12-14 | 1977-12-14 | Manufacturing method of field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5482175A true JPS5482175A (en) | 1979-06-30 |
JPS5852352B2 JPS5852352B2 (en) | 1983-11-22 |
Family
ID=15487701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52150019A Expired JPS5852352B2 (en) | 1977-12-14 | 1977-12-14 | Manufacturing method of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5852352B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676562A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676563A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676561A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5688352A (en) * | 1979-12-21 | 1981-07-17 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS56135976A (en) * | 1980-03-27 | 1981-10-23 | Seiko Instr & Electronics Ltd | Manufacture of field effect semiconductor device of junction type |
JPS56135974A (en) * | 1980-03-27 | 1981-10-23 | Seiko Instr & Electronics Ltd | Field effect semiconductor device of junction type and manufacture thereof |
JPS58155768A (en) * | 1982-03-11 | 1983-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS59155174A (en) * | 1983-02-24 | 1984-09-04 | Nippon Telegr & Teleph Corp <Ntt> | Field-effect type transistor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5056182A (en) * | 1973-09-14 | 1975-05-16 |
-
1977
- 1977-12-14 JP JP52150019A patent/JPS5852352B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5056182A (en) * | 1973-09-14 | 1975-05-16 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676562A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676563A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS5676561A (en) * | 1979-11-29 | 1981-06-24 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS6217384B2 (en) * | 1979-11-29 | 1987-04-17 | Tokyo Shibaura Electric Co | |
JPS6217385B2 (en) * | 1979-11-29 | 1987-04-17 | Tokyo Shibaura Electric Co | |
JPS5688352A (en) * | 1979-12-21 | 1981-07-17 | Toshiba Corp | Manufacture of semiconductor integrated circuit |
JPS6217386B2 (en) * | 1979-12-21 | 1987-04-17 | Tokyo Shibaura Electric Co | |
JPS56135976A (en) * | 1980-03-27 | 1981-10-23 | Seiko Instr & Electronics Ltd | Manufacture of field effect semiconductor device of junction type |
JPS56135974A (en) * | 1980-03-27 | 1981-10-23 | Seiko Instr & Electronics Ltd | Field effect semiconductor device of junction type and manufacture thereof |
JPS6214108B2 (en) * | 1980-03-27 | 1987-03-31 | Seiko Denshi Kogyo Kk | |
JPS58155768A (en) * | 1982-03-11 | 1983-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
JPS59155174A (en) * | 1983-02-24 | 1984-09-04 | Nippon Telegr & Teleph Corp <Ntt> | Field-effect type transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5852352B2 (en) | 1983-11-22 |
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