JPS5482175A - Field effect transistor and its manufacture - Google Patents

Field effect transistor and its manufacture

Info

Publication number
JPS5482175A
JPS5482175A JP15001977A JP15001977A JPS5482175A JP S5482175 A JPS5482175 A JP S5482175A JP 15001977 A JP15001977 A JP 15001977A JP 15001977 A JP15001977 A JP 15001977A JP S5482175 A JPS5482175 A JP S5482175A
Authority
JP
Japan
Prior art keywords
layer
poly
film
window
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15001977A
Other languages
Japanese (ja)
Other versions
JPS5852352B2 (en
Inventor
Tetsushi Sakai
Hiroki Yamauchi
Masaaki Sato
Takahiro Makino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52150019A priority Critical patent/JPS5852352B2/en
Publication of JPS5482175A publication Critical patent/JPS5482175A/en
Publication of JPS5852352B2 publication Critical patent/JPS5852352B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form a miniature FET by providing the sufficiently small P-layer on the N-layer and then leading the P-layer out by the poly Si layer to be connected to the electrode.
CONSTITUTION: Lamination layer 28 of SiO2 and Si3N4 and poly Si26 are laminated on N-layer 2 on the N+Si substrate with opening 27 and 25 provided. Then poly Si29 containing the P-type impurity is formed, and film 29 is removed through the ion etching. Window 31 of film 32 plus window 33 at remaining part 34 of film 29 are drilled opposing to window 26 of film 26. Then poly Si film 36 is formed into the desired shape and then given the wet-type oxidation to form SiO240 and 42 plus poly Si41. In this instant, P-layer 3 is formed via the P-type impurity contained in layer 41. Thin film 42 is removed and poly Si13 containing the N-type impurity is extended over layer 40, and N+-layer 4 is formed through the heat treatment. Then metal electrode 8 and 9 are formed on layer 40 and 13. In this way, the junction capacity becomes small enough between layer 2 and 3, thus forming a miniature FET for the high-speed use.
COPYRIGHT: (C)1979,JPO&Japio
JP52150019A 1977-12-14 1977-12-14 Manufacturing method of field effect transistor Expired JPS5852352B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52150019A JPS5852352B2 (en) 1977-12-14 1977-12-14 Manufacturing method of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52150019A JPS5852352B2 (en) 1977-12-14 1977-12-14 Manufacturing method of field effect transistor

Publications (2)

Publication Number Publication Date
JPS5482175A true JPS5482175A (en) 1979-06-30
JPS5852352B2 JPS5852352B2 (en) 1983-11-22

Family

ID=15487701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52150019A Expired JPS5852352B2 (en) 1977-12-14 1977-12-14 Manufacturing method of field effect transistor

Country Status (1)

Country Link
JP (1) JPS5852352B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS56135976A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Manufacture of field effect semiconductor device of junction type
JPS56135974A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Field effect semiconductor device of junction type and manufacture thereof
JPS58155768A (en) * 1982-03-11 1983-09-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS59155174A (en) * 1983-02-24 1984-09-04 Nippon Telegr & Teleph Corp <Ntt> Field-effect type transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056182A (en) * 1973-09-14 1975-05-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056182A (en) * 1973-09-14 1975-05-16

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676562A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6217384B2 (en) * 1979-11-29 1987-04-17 Tokyo Shibaura Electric Co
JPS6217385B2 (en) * 1979-11-29 1987-04-17 Tokyo Shibaura Electric Co
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS6217386B2 (en) * 1979-12-21 1987-04-17 Tokyo Shibaura Electric Co
JPS56135976A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Manufacture of field effect semiconductor device of junction type
JPS56135974A (en) * 1980-03-27 1981-10-23 Seiko Instr & Electronics Ltd Field effect semiconductor device of junction type and manufacture thereof
JPS6214108B2 (en) * 1980-03-27 1987-03-31 Seiko Denshi Kogyo Kk
JPS58155768A (en) * 1982-03-11 1983-09-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS59155174A (en) * 1983-02-24 1984-09-04 Nippon Telegr & Teleph Corp <Ntt> Field-effect type transistor

Also Published As

Publication number Publication date
JPS5852352B2 (en) 1983-11-22

Similar Documents

Publication Publication Date Title
JPS5495116A (en) Solid image pickup unit
GB1451096A (en) Semiconductor devices
JPS55133574A (en) Insulated gate field effect transistor
JPS5482175A (en) Field effect transistor and its manufacture
JPS55128884A (en) Semiconductor photodetector
JPS5470776A (en) Semiconductor device and its manufacture
JPS5522879A (en) Insulation gate type field effect semiconductor device
JPS544084A (en) Manufacture for semiconductor integrated circuit
JPS572519A (en) Manufacture of semiconductor device
JPS53148394A (en) Manufacture of semiconductor device
JPS53147481A (en) Semiconductor device and production of the same
JPS5553461A (en) Manufacture of semiconductor device
JPS5492074A (en) Mis field effect transistor and its manufacture
JPS5459084A (en) Manufacture of semiconductor device
JPS54121081A (en) Integrated circuit device
JPS54154271A (en) Manufacture of semiconductor device
JPS52117079A (en) Preparation of semiconductor device
JPS54114983A (en) Semiconductor device
JPS55132053A (en) Manufacture of semiconductor device
JPS5536976A (en) Production of semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS5612779A (en) Zener diode
JPS5461483A (en) Power semiconductor element
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5492070A (en) Mis field effect transistor and its manufacture