JPS5461483A - Power semiconductor element - Google Patents

Power semiconductor element

Info

Publication number
JPS5461483A
JPS5461483A JP12832977A JP12832977A JPS5461483A JP S5461483 A JPS5461483 A JP S5461483A JP 12832977 A JP12832977 A JP 12832977A JP 12832977 A JP12832977 A JP 12832977A JP S5461483 A JPS5461483 A JP S5461483A
Authority
JP
Japan
Prior art keywords
region
concentration
emitter
window
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12832977A
Other languages
Japanese (ja)
Inventor
Koichi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12832977A priority Critical patent/JPS5461483A/en
Publication of JPS5461483A publication Critical patent/JPS5461483A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the element area and to improve the dielectric strength, by lowering the surface concentration of the base and emitter region and by increasing the concentration for the surface region near the emitter base junction in the emitter region.
CONSTITUTION: SiO2 window is provided for the N type semiconductor 10 being the collector region, and the diffusion from this window forms the base region 1 of which surface concentration is 2×1018cm-3 or less. Similarly, the emitter region 2 of which surface impurity concentration is less than 2×1019cm-3. Further, the thickness of the oxide film 4 at the surface of the emitter region 2 is made thinner than the oxide film at the surface of the base region 1, window 5 is opened with etching, phosphorus diffusion is made through this window and the phosphorus region 6 of high concentration is placed. Next, oxidation grows the oxide film 7 and the surface region concentration near the emitter and base junction is taken less than 2×1019 cm-3. After that, the contact window is formed and the bade electrode 8 and the emitter region 9 are formed
COPYRIGHT: (C)1979,JPO&Japio
JP12832977A 1977-10-25 1977-10-25 Power semiconductor element Pending JPS5461483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12832977A JPS5461483A (en) 1977-10-25 1977-10-25 Power semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12832977A JPS5461483A (en) 1977-10-25 1977-10-25 Power semiconductor element

Publications (1)

Publication Number Publication Date
JPS5461483A true JPS5461483A (en) 1979-05-17

Family

ID=14982085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12832977A Pending JPS5461483A (en) 1977-10-25 1977-10-25 Power semiconductor element

Country Status (1)

Country Link
JP (1) JPS5461483A (en)

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