JPS56112762A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56112762A
JPS56112762A JP1433680A JP1433680A JPS56112762A JP S56112762 A JPS56112762 A JP S56112762A JP 1433680 A JP1433680 A JP 1433680A JP 1433680 A JP1433680 A JP 1433680A JP S56112762 A JPS56112762 A JP S56112762A
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
conductivity type
forming
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1433680A
Other languages
Japanese (ja)
Inventor
Shigeru Komatsu
Michio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1433680A priority Critical patent/JPS56112762A/en
Publication of JPS56112762A publication Critical patent/JPS56112762A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

Abstract

PURPOSE:To obtain a P-N junction having excellent reverse withstand voltage characteristic and forward characteristic by forming a reverse conductivity type low density polycrystalline silicon to one conductivity type polycrystalline silicon on a part region of the one conductivity type silicon formed on an insulating layer. CONSTITUTION:An N type polycrystalline silicon film 22 is formed on the insulating layer 21, and formed as a high density impurity region of desired shape by plasma etching. After the surface is oxidized to form an oxide film (insulating layer) 23, a window 24 for forming the P-N junction is formed. Subsequently, the P type polycrystalline silicon layer 25 having reverse conductivity type to the N type polycrystalline silicon layer 22 and low density impurity is formed. The impurity in the layer 22 is diffused in the layer 25 by a heat treatment, and an effective injection is formed in the layer 25. After a window 25 for forming an electrode leading wire is formed, electrodes 27, 27 are formed thereat.
JP1433680A 1980-02-08 1980-02-08 Semiconductor device Pending JPS56112762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1433680A JPS56112762A (en) 1980-02-08 1980-02-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1433680A JPS56112762A (en) 1980-02-08 1980-02-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56112762A true JPS56112762A (en) 1981-09-05

Family

ID=11858217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1433680A Pending JPS56112762A (en) 1980-02-08 1980-02-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56112762A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078221A2 (en) * 1981-10-27 1983-05-04 Fairchild Semiconductor Corporation Polycrystalline silicon diode with metal silicide contact
JPS5879746A (en) * 1981-11-05 1983-05-13 Nec Corp Semiconductor integrated circuit
JPS61134079A (en) * 1984-11-30 1986-06-21 アドバンスト・マイクロ・デイバイシズ・インコーポレーテツド Improved lateral polysilicon diode and making thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078221A2 (en) * 1981-10-27 1983-05-04 Fairchild Semiconductor Corporation Polycrystalline silicon diode with metal silicide contact
JPS5879746A (en) * 1981-11-05 1983-05-13 Nec Corp Semiconductor integrated circuit
JPS61134079A (en) * 1984-11-30 1986-06-21 アドバンスト・マイクロ・デイバイシズ・インコーポレーテツド Improved lateral polysilicon diode and making thereof

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