JPS5563847A - Manufacturing semiconductor device - Google Patents
Manufacturing semiconductor deviceInfo
- Publication number
- JPS5563847A JPS5563847A JP13762078A JP13762078A JPS5563847A JP S5563847 A JPS5563847 A JP S5563847A JP 13762078 A JP13762078 A JP 13762078A JP 13762078 A JP13762078 A JP 13762078A JP S5563847 A JPS5563847 A JP S5563847A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- substrate
- gate insulation
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE: To keep dielectric strength of a gate insulation film in good condition while maintaining acid-resistant properties upon selective oxidation by forming a silicon oxinitride film on a non-oxide region disposed on a Si substrate and selectively oxidizing the other region.
CONSTITUTION: Instead of a two-layer structure consisting of a Si3N4 film having acid-resistant properties and a SiO2 film, a silicon oxinitride film 11 obtained by doping O2 to Si3N4 is formed on a Si substrate 1. After etching it so as to leave a non-oxide region behind, a SiO2 film 4 is deeply formed in the other portion of the substrate through thermal oxidation. Since the film 11 is constituted by a large amount of SiO2 and a lesser amount of Si3N4 in its composition, there is no bird peak, so that the changes in the end portion does not occur. Finally, a gate insulation film 6 is formed. By doing so, acid-resistant properties upon selective oxidation as well as the dielectric strength of gate insulation film can be sufficiently maintained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13762078A JPS5563847A (en) | 1978-11-08 | 1978-11-08 | Manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13762078A JPS5563847A (en) | 1978-11-08 | 1978-11-08 | Manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5563847A true JPS5563847A (en) | 1980-05-14 |
Family
ID=15202922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13762078A Pending JPS5563847A (en) | 1978-11-08 | 1978-11-08 | Manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563847A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5762545A (en) * | 1980-10-03 | 1982-04-15 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1978
- 1978-11-08 JP JP13762078A patent/JPS5563847A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5762545A (en) * | 1980-10-03 | 1982-04-15 | Fujitsu Ltd | Manufacture of semiconductor device |
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