JPS5563847A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS5563847A
JPS5563847A JP13762078A JP13762078A JPS5563847A JP S5563847 A JPS5563847 A JP S5563847A JP 13762078 A JP13762078 A JP 13762078A JP 13762078 A JP13762078 A JP 13762078A JP S5563847 A JPS5563847 A JP S5563847A
Authority
JP
Japan
Prior art keywords
film
sio
substrate
gate insulation
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13762078A
Other languages
Japanese (ja)
Inventor
Hidetoshi Ishiwari
Hikosuke Shibayama
Seiichi Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13762078A priority Critical patent/JPS5563847A/en
Publication of JPS5563847A publication Critical patent/JPS5563847A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To keep dielectric strength of a gate insulation film in good condition while maintaining acid-resistant properties upon selective oxidation by forming a silicon oxinitride film on a non-oxide region disposed on a Si substrate and selectively oxidizing the other region.
CONSTITUTION: Instead of a two-layer structure consisting of a Si3N4 film having acid-resistant properties and a SiO2 film, a silicon oxinitride film 11 obtained by doping O2 to Si3N4 is formed on a Si substrate 1. After etching it so as to leave a non-oxide region behind, a SiO2 film 4 is deeply formed in the other portion of the substrate through thermal oxidation. Since the film 11 is constituted by a large amount of SiO2 and a lesser amount of Si3N4 in its composition, there is no bird peak, so that the changes in the end portion does not occur. Finally, a gate insulation film 6 is formed. By doing so, acid-resistant properties upon selective oxidation as well as the dielectric strength of gate insulation film can be sufficiently maintained.
COPYRIGHT: (C)1980,JPO&Japio
JP13762078A 1978-11-08 1978-11-08 Manufacturing semiconductor device Pending JPS5563847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13762078A JPS5563847A (en) 1978-11-08 1978-11-08 Manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13762078A JPS5563847A (en) 1978-11-08 1978-11-08 Manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5563847A true JPS5563847A (en) 1980-05-14

Family

ID=15202922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13762078A Pending JPS5563847A (en) 1978-11-08 1978-11-08 Manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5563847A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762545A (en) * 1980-10-03 1982-04-15 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762545A (en) * 1980-10-03 1982-04-15 Fujitsu Ltd Manufacture of semiconductor device

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